MDU3603RH [MGCHIP]
Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm);
| 型号： | MDU3603RH |
| 厂家： | 
MagnaChip |
| 描述： | Single P-Channel Trench MOSFET, -30V, -67A, 9.1m(ohm) |
| 文件： | 总7页 (文件大小：738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢀ MDU3603 ꢀ
SingleꢀPꢁChannelꢀTrenchꢀMOSFET,ꢀꢁ30V,ꢀꢁ67A,ꢀ9.1mꢂꢀ
GeneralꢀDescriptionꢀ
ꢀ
Featuresꢀ
ꢀ
Theꢀ MDU3603ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ
Technologyꢀtoꢀprovideꢀlowꢀonꢁstateꢀresistance.ꢀ ꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀꢁ30Vꢀ
IDꢀ=ꢀꢁ67Aꢀ @VGSꢀ=ꢀꢁ10Vꢀ
RDS(ON)
ꢀ
<ꢀ7.5mΩꢀ ꢀ ꢀ @VGSꢀ=ꢀꢁ20Vꢀ
<ꢀ9.1mΩꢀ ꢀ ꢀ @VGSꢀ=ꢀꢁ10Vꢀ
<ꢀ13.6mΩꢀ ꢀ @VGSꢀ=ꢀꢁ5Vꢀ
Thisꢀ deviceꢀ isꢀ suitedꢀ forꢀ Powerꢀ Managementꢀ andꢀ loadꢀ
switchingꢀ applicationsꢀ commonꢀ inꢀ Notebookꢀ Computersꢀ
andꢀPortableꢀBatteryꢀPacks.ꢀ
ꢀ ꢀ ꢀ
ꢀ
Applicationsꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
LoadꢀSwitchꢀ
Generalꢀpurposeꢀapplicationsꢀ
SmartꢀModuleꢀforꢀNoteꢀPCꢀBatteryꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
Dꢀ Dꢀ Dꢀ Dꢀ
Dꢀ Dꢀ Dꢀ Dꢀ
G
ꢀ
Sꢀ Sꢀ Sꢀ Gꢀ
Gꢀ Sꢀ Sꢀ Sꢀ
ꢀ
ꢀ
PDFN56ꢀ
ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=25oCꢀunlessꢀotherwiseꢀnoted)ꢀ ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
VDSS
VGSS
IDꢀ
Ratingꢀ
ꢁ30ꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
ꢀ
ꢀ
±25ꢀ
Vꢀ
ContinuousꢀDrainꢀCurrentꢀ(Siliconꢀlimited)ꢀ
ꢁ67ꢀ
Aꢀ
PulsedꢀDrainꢀCurrentꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
PowerꢀDissipationꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ
SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
IDM
ꢀ
ꢁ120ꢀ
2.5ꢀ
Aꢀ
PDꢀ
Wꢀ
mJꢀ
oCꢀ
EAS
ꢀ
112.5ꢀ
ꢁ55~150ꢀ
TJ,ꢀTstg
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ
Symbolꢀ
RθJA
RθJC
Ratingꢀ
50ꢀ
Unitꢀ
ꢀ
oC/Wꢀ
ꢀ
2ꢀ
ꢀ
ꢀ ꢀ
1
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
Packageꢀ
Packingꢀ
Quantityꢀ
RoHSꢀStatusꢀ
MDU3603RHꢀ
PowerDFN56ꢀ
Tapeꢀ&ꢀReelꢀ
3000ꢀunitsꢀ
HalogenꢀFreeꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=ꢀ25oCꢀunlessꢀotherwiseꢀnoted)ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
StaticꢀCharacteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
BVDSS
VGS(th)
IDSS
IGSS
ꢀ
ꢀ ꢀ IDꢀ=ꢀꢁ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀꢁ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀꢁ30V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±25V,ꢀVDSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀꢁ20V,ꢀIDꢀ=ꢀꢁ12Aꢀ
ꢀ ꢀ VGSꢀ=ꢀꢁ10V,ꢀIDꢀ=ꢀꢁ12Aꢀ
VGSꢀ=ꢀꢁ5V,ꢀIDꢀ=ꢀꢁ10Aꢀ
ꢁ30ꢀ
ꢁꢀ
ꢁ1.8ꢀ
ꢀ
ꢁꢀ
Vꢀ
ꢀ
ꢁ1.0ꢀ ꢀ
ꢁ3.0ꢀ
ꢁ1ꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ
ꢂAꢀ
mꢃꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ
ꢁꢀ
±0.1ꢀ
7.5ꢀ
9.1ꢀ
13.6ꢀ
ꢁꢀ
6.4ꢀ
7.5ꢀ
10.8ꢀ
34ꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
RDS(ON)ꢀ
ꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
gFS
ꢀ
ꢀ ꢀ VDSꢀ=ꢀꢁ5V,ꢀIDꢀ=ꢀꢁ10Aꢀ
ꢀ
Sꢀ
Qgꢀ
Qgsꢀ
Qgdꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
38.4ꢀ
5.9ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
VDSꢀ=ꢀꢁ15V,ꢀIDꢀ=ꢀꢁ12Aꢀ
VGSꢀ=ꢀꢁ10Vꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
nCꢀ
pFꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
8.2ꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
Crss
Coss
td(on)
trꢀ
td(off)
tfꢀ
ꢀ
1788ꢀ
268ꢀ
445ꢀ
15.3ꢀ
13.0ꢀ
61.6ꢀ
53.2ꢀ
VDSꢀ=ꢀꢁ15V,ꢀVGSꢀ=ꢀ0V,ꢀ ꢀ
fꢀ=ꢀ1.0MHzꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
ꢀ
ꢀ
ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ
ꢀ
ꢀ ꢀ TurnꢁOnꢀRiseꢀTimeꢀ
ꢀ ꢀ VGSꢀ=ꢀꢁ10Vꢀ,VDSꢀ=ꢀꢁ15V,ꢀ ꢀ
RLꢀ=ꢀ1.25ꢃ,ꢀRGENꢀ=ꢀ3ꢃꢀ
nsꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
ꢀ
ꢀ ꢀ TurnꢁOffꢀFallꢀTimeꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ
VSD
ꢀ
ꢀ ꢀ ISꢀ=ꢀꢁ1A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁ0.71ꢀ
42.3ꢀ
40.7ꢀ
ꢁ1.0ꢀ
Vꢀ
trrꢀ
ꢀ
nsꢀ
nCꢀ
ꢀ ꢀ IFꢀ=ꢀꢁ12A,ꢀdi/dtꢀ=ꢀ100A/ꢂsꢀ
Qrrꢀ
ꢁꢀ
ꢀ
Noteꢀ:ꢀ
ꢀ
1.ꢀ SurfaceꢀmountedꢀFRꢁ4ꢀboardꢀbyꢀJEDECꢀ(jesd51ꢁ7)ꢀ
2.ꢀ StartingꢀTJ=25°C,ꢀL=1mH,ꢀIAS=ꢀꢁ15AꢀVDD=ꢁ20V,ꢀVGS=ꢁ10V.ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
20
15
10
5
50
45
40
35
30
25
20
15
10
5
ꢁ10.0V
ꢁ4.0V
ꢁ5.0V
ꢁ6.0V
ꢁ8.0V
VGS=ꢀꢁ5V
VGS=ꢁ3.5V
VGS=ꢀꢁ10V
VGS=ꢁ3.0V
VGS=ꢁ2.5V
2.0
0
0.0
0
0.5
1.0
1.5
2.5
0
10
20
30
40
ꢁVDSꢀ[V]
ꢂIDꢀ[A]
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
*Note;ꢀID=ꢁ12A
*Noteꢀ;ꢀID=ꢁ12A
VGS=ꢁ10V
2
3
4
5
6
7
8
9
10
ꢁ50
ꢁ25
0
25
50
75
100
125
150
ꢂVGSꢀ[V]
TJ,ꢀJunctionꢀTemperatureꢀ[℃]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀOnꢁResistanceꢀVariationꢀwithꢀ
GateꢀtoꢀSourceꢀVoltageꢀ
ꢀ
ꢀ
30
25
20
15
10
5
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀVGSꢀ=ꢀ0V
*ꢀNoteꢀ;ꢀVDS=ꢁ5V
101
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ꢂVGSꢀ[V]
ꢁVSD,ꢀSourceꢁDrainꢀvoltageꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀ Bodyꢀ Diodeꢀ Forwardꢀ Voltageꢀ
Variationꢀ withꢀ Sourceꢀ Currentꢀ andꢀ
Temperatureꢀ
ꢀ
ꢀ
3
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
10
8
3.0n
2.5n
*ꢀNoteꢀ:VDSꢀ=ꢀꢁ15V
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIDꢀ=ꢀꢁ12A
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
2.0n
C
iss
6
1.5n
4
1.0n
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
Coss
2
500.0p
0.0
C
rss
0
0
10
20
30
40
50
0
5
10
15
20
25
30
ꢂQgꢀ[nC]
ꢂVDSꢀ[V]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
103
102
101
100
10ꢁ1
10ꢁ2
100
90
80
70
60
50
40
30
20
10
0
10ꢀms
100ꢀms
1s
10s
DC
OperationꢀinꢀThisꢀArea
isꢀLimitedꢀbyꢀRꢀDS(on)
SingleꢀPulse
Rθ j=c 2℃/W
Ta=25℃
10ꢁ1
100
101
102
25
50
75
100
125
150
Taꢀ[℃]
ꢂVDSꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
Fig.10ꢀ Maximumꢀ Drainꢀ Currentꢀ vs.ꢀ
AmbientꢀTemperatureꢀ
ꢀ
101
100
D=0.5
0.2
0.1
ꢁ1
10
*ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTꢀ=ꢀPDMꢀ*ꢀZ ꢀ*ꢀR (t)ꢀ+ꢀTC
0.05
J
θ
JC
θ JC
ꢀꢀꢀꢀꢀꢀRΘ JC=2℃/W
0.02
0.01
ꢁ2
10
singleꢀpulse
ꢁ4
10
ꢁ3
10
ꢁ2
10
ꢁ1
10
0
10
101
102
103
t1,ꢀRectangularꢀPulseꢀDurationꢀ[s]
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
ꢀ
ꢀ
4
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
5
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
PackageꢀDimensionꢀ
ꢀ
ꢀ
ꢀ
PowerDFN56ꢀ(5x6mm)ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
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ꢀ
ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
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ꢀ
ꢀ
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ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
MILLIMETERSꢀ
Dimensionꢀ
Minꢀ
Maxꢀ
1.10ꢀ
0.51ꢀ
0.34ꢀ
5.10ꢀ
Aꢀ
bꢀ
0.90ꢀ
0.33ꢀ
0.20ꢀ
4.50ꢀ
Cꢀ
D1ꢀ
D2ꢀ
ꢁꢀ
4.22ꢀ
Eꢀ
E1ꢀ
E2ꢀ
eꢀ
5.90ꢀ
5.50ꢀ
ꢁꢀ
6.30ꢀ
6.10ꢀ
4.30ꢀ
1.27BSCꢀ
Hꢀ
0.41ꢀ
0.20ꢀ
0.51ꢀ
0.71ꢀ
ꢁꢀ
Kꢀ
Lꢀ
0.71ꢀ
αꢀ
0°ꢀ
12°ꢀ
6
May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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DISCLAIMER:ꢀ
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TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
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MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
SemiconductorꢀLtd.ꢀ ꢀ
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May.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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