MDU3605 [MGCHIP]
Single P-Channel Trench MOSFET, -30V, -35.6A, 17.0m(ohm);
| 型号： | MDU3605 |
| 厂家： | 
MagnaChip |
| 描述： | Single P-Channel Trench MOSFET, -30V, -35.6A, 17.0m(ohm) |
| 文件： | 总6页 (文件大小：767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢀ MDU3605 ꢀ
SingleꢀPꢁChannelꢀTrenchꢀMOSFET,ꢀꢁ30V,ꢀꢁ35.6A,ꢀ17.0mꢂꢀ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
Theꢀ MDU3605ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ
Technologyꢀtoꢀprovideꢀlowꢀonꢁstateꢀresistance.ꢀ ꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀꢁ30Vꢀ
IDꢀ=ꢀꢁ35.6Aꢀ ꢀ @VGSꢀ=ꢀꢁ10Vꢀ
RDS(ON)
<ꢀ17.0mΩꢀ ꢀ ꢀ @VGSꢀ=ꢀꢁ10Vꢀ
<ꢀ27.0mΩꢀ ꢀ @VGSꢀ=ꢀꢁ5Vꢀ
ꢀ
Thisꢀ deviceꢀ isꢀ suitedꢀ forꢀ Powerꢀ Managementꢀ andꢀ loadꢀ
switchingꢀ applicationsꢀ commonꢀ inꢀ Notebookꢀ Computersꢀ
andꢀPortableꢀBatteryꢀPacks.ꢀ
ꢀ ꢀ ꢀ
ꢀ
Applicationsꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
LoadꢀSwitchꢀ
Generalꢀpurposeꢀapplicationsꢀ
SmartꢀModuleꢀforꢀNoteꢀPCꢀBatteryꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
Dꢀ ꢀ Dꢀ
Dꢀ Dꢀ
Dꢀ Dꢀ Dꢀ Dꢀ
G
Sꢀꢀ
Sꢀ Sꢀ Gꢀ
Gꢀ Sꢀ Sꢀ Sꢀ
ꢀ
ꢀ
PowerDFN56ꢀ
ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=25oCꢀunlessꢀotherwiseꢀnoted)ꢀ ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
Ratingꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
VDSS
ꢀ
ꢀ
ꢁ30ꢀ
±25ꢀ
VGSS
Vꢀ
TC=25ꢀoCꢀ(Siliconꢀlimited)ꢀ
TA=25oCꢀ
ꢁ35.6ꢀ
ꢁ9.4ꢀ
ContinuousꢀDrainꢀCurrentꢀ(1)
ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
IDꢀ
Aꢀ
Aꢀ
IDM
ꢀ
ꢁ80.0ꢀ
35.7ꢀ
ꢀ TC=25oCꢀ
ꢀ TA=25oCꢀ
PDꢀ
Wꢀ
2.5ꢀ
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergyꢀ(2)
ꢀ
EAS
ꢀ
78.1ꢀ
mJꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢁ55~150ꢀ
oC
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
RθJA
RθJC
Ratingꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ
ꢀ
50ꢀ
oC/Wꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ
ꢀ
3.5ꢀ
ꢀ
1
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
Packageꢀ
Packingꢀ
RoHSꢀStatusꢀ
MDU3605RHꢀ
PowerDFN56ꢀ
Tapeꢀ&ꢀReelꢀ
HalogenꢀFreeꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=ꢀ25oCꢀunlessꢀotherwiseꢀnoted)ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
StaticꢀCharacteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
BVDSS
VGS(th)
IDSS
IGSS
ꢀ
ꢀ ꢀ IDꢀ=ꢀꢁ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀꢁ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀꢁ30V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±25V,ꢀVDSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀꢁ10V,ꢀIDꢀ=ꢀꢁ8Aꢀ
VGSꢀ=ꢀꢁ5V,ꢀIDꢀ=ꢀꢁ8Aꢀ
ꢁ30ꢀ
ꢁꢀ
ꢁꢀ
Vꢀ
ꢀ
ꢁ1.0ꢀ ꢀ
ꢁ2.0ꢀ
ꢀ
ꢁ3.0ꢀ
ꢁ1ꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ
ꢂAꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ
ꢁꢀ
±0.1ꢀ
17.0ꢀ
27.0ꢀ
ꢁꢀ
13.5ꢀ
20.0ꢀ
21.5ꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
RDS(ON)
gFS
ꢀ
mꢃꢀ
Sꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
ꢀ
ꢀ ꢀ VDSꢀ=ꢀꢁ5V,ꢀIDꢀ=ꢀꢁ8Aꢀ
ꢀ
Qgꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
22.0ꢀ
3.3ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
VDSꢀ=ꢀꢁ15V,ꢀIDꢀ=ꢀꢁ8Aꢀ
VGSꢀ=ꢀꢁ10Vꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
Qgsꢀ
nCꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
Qgd
ꢀ
ꢀ
4.3ꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
1035ꢀ
150ꢀ
260ꢀ
6.4ꢀ
VDSꢀ=ꢀꢁ15V,ꢀVGSꢀ=ꢀ0V,ꢀ ꢀ
fꢀ=ꢀ1.0MHzꢀ
pFꢀ
ꢃꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
Crssꢀ
Coss
Rgꢀ
td(on)
trꢀ
ꢀ
ꢀ ꢀ GateꢀResistanceꢀ
fꢀ=ꢀ1.0MHzꢀ
ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ
ꢀ
12.0ꢀ
12.4ꢀ
52.1ꢀ
8.9ꢀ
ꢀ ꢀ TurnꢁOnꢀRiseꢀTimeꢀ
ꢀ ꢀ VGSꢀ=ꢀꢁ10Vꢀ,VDSꢀ=ꢀꢁ15V,ꢀ ꢀ
IDꢀ=ꢀꢁ8A,ꢀRGENꢀ=ꢀ3ꢃꢀ
nsꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
td(off)
ꢀ
ꢀ ꢀ TurnꢁOffꢀFallꢀTimeꢀ
tfꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ
VSD
trrꢀ
ꢀ
ꢀ ꢀ ISꢀ=ꢀꢁ1A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁ0.71ꢀ
30.8ꢀ
26.4ꢀ
ꢁ1.0ꢀ
Vꢀ
ꢀ
nsꢀ
nCꢀ
ꢀ ꢀ IFꢀ=ꢀꢁ8A,ꢀdi/dtꢀ=ꢀ100A/ꢂsꢀ
Qrrꢀ
ꢁꢀ
ꢀ
ꢀ
Noteꢀ:ꢀ
ꢀ
1.ꢀ SurfaceꢀmountedꢀRF4ꢀboardꢀwithꢀ2oz.ꢀCopper.ꢀ
2.ꢀ StartingꢀTJ=25°C,ꢀL=1.0mH,ꢀIAS=ꢀꢁ11.0AꢀVDD=ꢁ20.0V,ꢀVGS=ꢁ10.0V.ꢀTestedꢀatꢀIAS=ꢁ8.5A.ꢀ
ꢀ
2
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
ꢂ10.0V
ꢂ5.0V
ꢂ6.0V
ꢂ8.0V
VGS=ꢂ4.0V
V
GS=ꢁ5V
VGS=ꢁ10V
VGS=ꢂ3.5V
VGS=ꢂ3.0V
VGS=ꢂ2.5V
0
0
0
1
2
3
4
5
0
10
20
30
40
ꢂVDSꢀ[V]
ꢂIDꢀ[A]
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
35
30
25
20
15
10
5
*Note;ꢀID=ꢁ8A
*Noteꢀ;ꢀID=ꢁ8A
VGS=ꢁ10V
ꢁ50
ꢁ25
0
25
50
75
100
125
150
2
3
4
5
6
7
8
9
10
TJ,ꢀJunctionꢀTemperatureꢀ[℃]
ꢂVGSꢀ[V]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀOnꢁResistanceꢀVariationꢀwithꢀ
GateꢀtoꢀSourceꢀVoltageꢀ
ꢀ
ꢀ
30
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀVGSꢀ=ꢀ0V
*ꢀNoteꢀ;ꢀVDS=ꢁ5V
25
20
15
10
5
101
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ꢂVGSꢀ[V]
ꢁVSD,ꢀSourceꢁDrainꢀvoltageꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀ Bodyꢀ Diodeꢀ Forwardꢀ Voltageꢀ
Variationꢀ withꢀ Sourceꢀ Currentꢀ andꢀ
Temperatureꢀ
ꢀ
ꢀ
3
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
10
8
1500
1200
900
600
300
0
*ꢀNoteꢀ:VDSꢀ=ꢀꢁ15V
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIDꢀ=ꢀꢁ8A
C
issꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
C
iss
6
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
Coss
2
Crss
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ꢂQgꢀ[nC]
ꢂVDSꢀ[V]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
103
102
101
100
10ꢁ1
50
40
30
20
10
0
10ꢀms
OperationꢀinꢀThisꢀArea
isꢀLimitedꢀbyꢀRꢀDS(on)
100ꢀms
1s
10s
DC
SingleꢀPulse
TJ=MaxꢀRated
TC=25℃
10ꢁ1
100
101
102
25
50
75
100
125
150
TCꢀ[℃]
ꢂVDSꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
Fig.10ꢀ Maximumꢀ Drainꢀ Currentꢀ vs.ꢀ
AmbientꢀTemperatureꢀ
ꢀ
1
10
D=0.5
0
10
0.2
0.1
0.05
ꢁ1
10
0.02
0.01
singleꢀpulse
ꢁ2
10
*ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTꢀ=ꢀPDMꢀ*ꢀZ ꢀ*ꢀR (t)ꢀ+ꢀTC
J
θ
JC
θ JC
ꢁ4
10
ꢁ3
10
ꢁ2
10
ꢁ1
10
0
10
101
102
103
t1,ꢀRectangularꢀPulseꢀDurationꢀ[s]
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
ꢀ
ꢀ
ꢀ
4
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
PackageꢀDimensionꢀ
ꢀ
ꢀ
ꢀ
PowerDFN56ꢀ(5x6mm)ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
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ꢀ ꢀ
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MILLIMETERSꢀ
Dimensionꢀ
Minꢀ
Maxꢀ
1.10ꢀ
0.51ꢀ
0.34ꢀ
5.10ꢀ
Aꢀ
bꢀ
0.90ꢀ
0.33ꢀ
0.20ꢀ
4.50ꢀ
Cꢀ
D1ꢀ
D2ꢀ
ꢁꢀ
4.22ꢀ
Eꢀ
E1ꢀ
E2ꢀ
eꢀ
5.90ꢀ
5.50ꢀ
ꢁꢀ
6.30ꢀ
6.10ꢀ
4.30ꢀ
1.27BSCꢀ
Hꢀ
0.41ꢀ
0.20ꢀ
0.51ꢀ
0.71ꢀ
ꢁꢀ
Kꢀ
Lꢀ
0.71ꢀ
αꢀ
0°ꢀ
12°ꢀ
5
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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DISCLAIMER:ꢀ
ꢀ
TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀ inꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
ꢀ
ꢀ
ꢀ
MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
SemiconductorꢀLtd.ꢀ ꢀ
ꢀ
6
August.ꢀ2011.ꢀVersionꢀ1.1ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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