LTC5509 [Linear]
300MHz to 3GHz 300MHz RF Power Detector in SC70 Package; 300MHz到3GHz 300MHz的RF功率检测器，SC70封装
| 型号： | LTC5509 |
| 厂家： | 
Linear |
| 描述： | 300MHz to 3GHz 300MHz RF Power Detector in SC70 Package |
| 文件： | 总8页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5509
300MHz to 3GHz
RF Power Detector
in SC70 Package
U
FEATURES
DESCRIPTIO
The LTC®5509 is an RF power detector for RF applications
operating in the 300MHz to 3GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small SC70 package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
■
Temperature Compensated Internal Schottky Diode
RF Detector
■
Wide Input Frequency Range: 300MHz to 3GHz
■
Wide Input Power Range: –30dBm to 6dBm
■
Buffered Detector Output
■
Wide VCC Range of 2.7V to 6V
■
Low Operating Current: 600µA
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin without gain compression. Con-
sequently, theoutputvoltageislinearlyproportionaltothe
RFinputvoltage. Apowersavingshutdownmodereduces
supply current to less than 2µA.
■
Low Shutdown Current: <2µA
■
SC70Package
U
APPLICATIO S
■
Multimode Mobile Phone Products
The LTC5509 operates with input power levels from
–30dBm to 6dBm.
■
Optical Data Links
■
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
, LTC and LT are registered trademarks of Linear Technology Corporation.
■
■
■
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TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3000
V
A
= 3.6V
CC
T
= 25°C
2500
2000
1500
1000
500
300MHz to 3GHz RF Power Detector
850MHz
1.85GHz
33pF
LTC5509
6
2
1
4
5
3
3GHz
RF
V
RF
IN
CC
V
CC
INPUT
100pF
0.1µF
GND
GND
V
OUT
DISABLE ENABLE
SHDN
V
OUT
5509 TA01
0
–5
0
–30 –25 –20 –15 –10
5
10
RF INPUT POWER (dBm)
5509 TA02
5509f
1
LTC5509
W W U W
U W
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ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
VCC, VOUT to GND .................................... –0.3V to 6.5V
RFIN Voltage .........................................(VCC ± 1V) to 7V
SHDN Voltage to GND ................ –0.3V to (VCC + 0.3V)
IVOUT ...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
ORDER PART
NUMBER
TOP VIEW
LTC5509ESC6
SHDN 1
GND 2
6 RF
IN
5 GND
V
3
4 V
CC
OUT
SC6 PART
MARKING
SC6 PACKAGE
6-LEAD PLASTIC SC70
TJMAX = 125°C, θJA = 256°C/W
LADD
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Shutdown Current
Operating Current
●
●
●
2.7
CC
VCC
VCC
I
I
SHDN = LO
2
µA
SHDN = HI, I
= 0mA
0.58
0.85
400
mA
VOUT
V
V
(No RF Input)
R
= 2k, SHDN = HI, Enabled
LOAD
150
1
250
1
mV
mV
OUT OL
SHDN = LOW, Disabled
V
V
V
V
V
V
Output Current
Enable Time
Bandwidth
V
= 1.75V, V = 2.7V, ∆V
= 10mV
= 2k
●
●
2
8
mA
µs
OUT
OUT
OUT
OUT
OUT
OUT
OUT
CC
OUT
SHDN = HI, C
= 33pF, R
20
33
LOAD
LOAD
C
= 33pF, R
= 2k (Note 4)
1.5
MHz
pF
LOAD
LOAD
Load Capacitance
Slew Rate
(Note 6)
●
V
V
V
V
= 0.7V Step, C
= 33pF, R = 2k (Note 3)
LOAD
8
2
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
mV
P-P
CC
CC
CC
SHDN Voltage, Chip Disabled
SHDN Voltage, Chip Enabled
SHDN Input Current
= 2.7V to 6V
= 2.7V to 6V
●
●
●
0.35
40
V
1.4
V
SHDN = 3.6V
24
300 to 3000
–30 to 6
150
µA
RF Input Frequency Range
IN
MHz
dBm
Ω
RF Input Power Range
IN
RF Frequency = 300MHz to 3GHz (Note 5, 6)
F = 300MHz, Pin = –25dBm
RF AC Input Resistance
IN
RF Input Shunt Capacitance
IN
F = 300MHz, Pin = –25dBm
0.9
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 3: The rise time at V
is measured between V /2 + 0.5V to
OUT OUT
V
/2 – 0.5V.
OUT
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 4: Bandwidth is calculated using the 10% to 90% rise time equation:
BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
5509f
2
LTC5509
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage
(RF Input Signal Off)
Typical Detector Characteristics,
850MHz
Supply Current vs Supply Voltage
650
600
550
3000
2500
2000
1500
1000
500
305
300
295
290
V
= 3.6V
CC
T
= –40°C
A
T
A
= 25°C
A
T
= 25°C
= 85°C
A
T
= –40°C
T
= –40°C
A
T
A
T
A
= 25°C
T
= 85°C
A
T
= 85°C
A
0
285
2.5
3
3.5
4
4.5
5
5.5
6
–5
0
–30 –25 –20 –15 –10
5
10
2.5
3
3.5
4
4.5
5
5.5
6
SUPPLY VOLTAGE (V)
RF INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
5509 G01
5509 G03
5509 G02
Typical Detector Characteristics,
1850MHz
Typical Detector Characteristics,
3000MHz
VOUT Slope vs RF Input Power at
850MHz
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
1000
100
V
CC
= 3.6V
V
CC
= 3.6V
V
= 3.6V
CC
T
A
= 25°C
T = 25°C
A
A
T
= –40°C
T = –40°C
A
T
= –40°C
T = 85°C
A
A
10
T
= 85°C
T = 85°C
A
A
T
= 25°C
A
0
0
1
–5
0
–5
0
–30 –25 –20 –15 –10
5
10
–30 –25 –20 –15 –10
5
10
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5509 G04
5509 G05
5509 G06
VOUT Slope vs RF Input Power at
3000MHz
VOUT Slope vs RF Input Power at
1850MHz
1000
100
1000
100
V
= 3.6V
V
= 3.6V
CC
CC
T
= –40°C
T = 85°C
A
T
= –40°C
T = 85°C
A
A
A
10
10
T
= 25°C
T
= 25°C
A
A
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5509 G08
5509 G07
5509f
3
LTC5509
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
I
PNT
#
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
1
2
0.300
0.468
0.637
0.806
0.975
1.143
1.312
1.481
1.650
1.818
1.987
2.156
2.325
2.493
2.662
2.831
3.000
185.434
173.804
161.644
149.450
137.402
126.251
114.165
100.350
89.015
80.586
73.674
67.737
62.354
57.833
53.701
50.166
47.094
–62.632
–65.491
–71.893
–76.830
–79.300
–81.429
–84.108
–83.547
–80.053
–74.762
–70.242
–66.323
–61.497
–57.213
–53.443
–48.992
–44.997
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
5509 TA03
0.300000GHz TO 3.000000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
PNT
#
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
1
2
0.300
0.468
0.637
0.806
0.975
1.143
1.312
1.481
1.650
1.818
1.987
2.156
2.325
2.493
2.662
2.831
3.000
146.073
140.112
133.522
127.142
120.560
114.518
107.427
96.348
86.158
79.014
73.054
67.785
63.701
59.598
55.559
52.713
49.898
–48.091
–44.500
–46.654
–50.559
–52.094
–53.472
–58.362
–61.184
–59.226
–55.746
–52.613
–49.515
–46.430
–43.378
–40.355
–37.150
–34.268
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
5509 TA04
0.300000GHz TO 3.000000GHz
5509f
4
LTC5509
U
U
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PI FU CTIO S
SHDN (Pin 1): Shutdown Input. A logic low on the SHDN
pinplacesthepartinshutdownmode.Alogichighenables
the part. SHDN has an internal 150k pull down resistor to
ensure that the part is in shutdown when no input is
applied.
VCC (Pin4):PowerSupplyVoltage, 2.7Vto6V. VCC should
be bypassed appropriately with ceramic capacitors.
RFIN (Pin 6): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 3GHz.
This pin has an internal 250Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
GND (Pin 2, 5): Ground.
V
OUT (Pin 3): Detector Output.
W
BLOCK DIAGRA
RF
SOURCE
33pF TO 200pF
(DEPENDING ON
APPLICATION)
V
CC
4
+
BUFFER
30k
V
OUT
3
–
250Ω
6
RF
IN
100Ω
100Ω
30k
27k
28pF
+
–
130mV
40k
RF DET
27k
BIAS
60µA
60µA
150k
GND
GND
2
5
1
5509 BD
SHDN
5509f
5
LTC5509
U
W U U
APPLICATIO S I FOR ATIO
Operation
The Schottky detector is biased at about 60µA and drives
a peak detector capacitor of 28pF.
The LTC5509 RF detector integrates several functions to
provideRFpowerdetectionoverfrequenciesrangingfrom
300MHz to 3GHz. These functions include an internally
compensated buffer amplifier, an RF Schottky diode peak
detectorandlevelshiftamplifiertoconverttheRFfeedback
signal to DC and a delay circuit to avoid voltage transients
atVOUT whencomingoutofshutdown. TheLTC5509does
not incorporate gain compression. Consequently, it offers
a linear transfer relationship between RF input voltage and
DC output voltage.
Modes of Operation
MODE
SHDN
Low
OPERATION
Disabled
Shutdown
Enable
High
Power Detect
Applications
TheLTC5509canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–30dBm to 6dBm for frequencies from 300MHz to 3GHz.
Buffer Amplifier
The buffer amplifier is capable of driving a 2mA load. The
buffer amplifier typically has an output voltage range of
0.25V to 3V with VCC = 3.6V. At lower supply voltages the
maximum output swing is reduced.
The LTC5509 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 1.5MHz.
Depending on specific application needs, the RSSI output
can be split into two branches, providing AC-coupled data
(or audio) output and DC-coupled, RSSI output for signal
strength measurements and AGC.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The LTC5509 can be used for RF power detection and
control. Refer to Application Note 91, “Low Cost Coupling
Methods for RF Power Detectors Replace Directional
Couplers.”
Demo Board Schematic
V
CC
R3
22k
E4
SHDN
C1
33pF
RF
IN
ENABLE
1
2
J1
SHDN
LTC5509
RF
R1
DISABLE 3
68Ω
(OPT)
JP1
R2
GND
GND
68Ω
V
CC
(OPT)
E2
E1
E5
V
V
V
V
OUT
OUT
CC
CC
E3
C5
(OPT)
C2
0.1µF
C3
100pF
GND
GND
5509 AI01
5509f
6
LTC5509
U
PACKAGE DESCRIPTIO
SC6 Package
6-Lead Plastic SC70
(Reference LTC DWG # 05-08-1638)
0.47
MAX
0.65
REF
1.80 – 2.20
(NOTE 4)
1.16 REF
0.96 MIN
INDEX AREA
(NOTE 6)
1.15 – 1.35
1.80 – 2.40
3.26 MAX 2.1 REF
(NOTE 4)
PIN 1
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.15 – 0.30
6 PLCS (NOTE 3)
0.65 BSC
0.10 – 0.40
0.80 – 1.00
0.00 – 0.10
REF
1.00 MAX
0.10 – 0.30
SC6 SC70 0802
0.10 – 0.18
(NOTE 3)
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. DETAILS OF THE PIN 1 INDENTIFIER ARE OPTIONAL,
BUT MUST BE LOCATED WITHIN THE INDEX AREA
7. EIAJ PACKAGE REFERENCE IS EIAJ SC-70
5509f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LTC5509
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PART NUMBER
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LTC1757A
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DESCRIPTION
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LTC4401
LTC4403
LT®5500
Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer,
1.8V ≤ V
≤ 5.25V
SUPPLY
LT5502
LT5503
400MHz Quadrature Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range
1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth
1.2GHz to 2.7GHz Direct IQ Modulator and
Up Converting Mixer
LT5504
LTC5505
LT5506
LTC5507
LTC5508
LT5511
LT5512
800MHz to 2.7GHz RF Measuring Receiver
300MHz to 3.5GHz RF Power Detector
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
100kHz to 1GHz RF Power Detector
300MHz to 7GHz RF Power Detector
High Signal Level Up Converting Mixer
High Signal Level Down Converting Mixer
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
SC70 Package
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC-3GHz, 20dBm IIP3, Integrated LO Buffer
5509f
LT/TP 0203 2K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
8
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2003
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