LTC5530ES6#PBF [Linear]
LTC5530 - Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C;
| 型号： | LTC5530ES6#PBF |
| 厂家： | 
Linear |
| 描述： | LTC5530 - Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C 光电二极管 |
| 文件： | 总12页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5530
Precision 300MHz to 7GHz
RF Detector with Shutdown
and Gain Adjustment
U
DESCRIPTIO
FEATURES
The LTC®5530 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 300MHz to 7GHz*
■
Wide Input Power Range: –32dBm to 10dBm
■
Buffered Detector Output with External Gain Control
■
Low Starting Voltage: 120mV ±35mV for Gain = 2X
■
Wide VCC Range of 2.7V to 6V
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin. The output buffer gain is set via
external resistors. A power saving shutdown mode re-
duces current to less than 2µA.
■
Low Operating Current: 500µA
■
Low Shutdown Current: <2µA
■
Available in a Low Profile (1mm) SOT-23 Package
U
APPLICATIO S
The LTC5530 operates with input power levels from
–32dBm to 10dBm.
■
802.11a, 802.11b, 802.11g, 802.15, 802.16
■
Multimode Mobile Phone Products
■
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
■
■
information.
■
■
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TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
V
T
= 3.6V
= 25°C
CC
A
300MHz
300MHz to 7GHz RF Power Detector
3200
2800
2400
2000
1600
1200
800
1000MHz
2000MHz
3000MHz
4000MHz
5000MHz
6000MHz
7000MHz
GAIN = 2
33pF
LTC5530
1
2
3
6
5
4
RF
V
CC
RF
V
CC
IN
INPUT
100pF
0.1µF
GND
V
OUT
R
R
A
B
SHDN
DISABLE ENABLE
V
M
400
5530 TA01
0
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
5530 TA02
5530f
1
LTC5530
W W U W
U
W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
VCC, VOUT, SHDN, VM ...................................... –0.3V to 6.5V
RFIN Voltage ......................................(VCC ± 1.5V) to 7V
RFIN Power (RMS) .............................................. 12dBm
NUMBER
TOP VIEW
LTC5530ES6
RF
1
6 V
5 V
4 V
IN
CC
OUT
M
I
VOUT ...................................................................... 5mA
GND 2
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
SHDN 3
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LBDX
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
RA = RB = 1k, SHDN = HI unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Operating Current
Shutdown Current
●
●
●
●
2.7
CC
I
I
I
= 0mA
VOUT
0.5
0.7
2
mA
µA
VCC
VCC
SHDN = LO
0.01
V
OUT
(No RF Input)
R
LOAD
= 2k
85
2
100 to 140
1
155
mV
mV
SHDN = LO
= 1.75V, V = 2.7V, ∆V < 10mV
OUT
V
V
V
V
V
V
V
V
Output Current
Enable Time
Bandwidth
V
OUT
●
●
4
8
2
mA
µs
OUT
OUT
OUT
OUT
OUT
OUT
CC
SHDN = LO to HI, C
= 33pF, R
= 2k
LOAD
20
33
LOAD
C
LOAD
= 33pF, R
= 2k (Note 4)
MHz
pF
LOAD
Load Capacitance
Slew Rate
(Notes 6, 7)
●
V
V
= 1V Step, C
= 33pF, R = 2k (Note 3)
LOAD
3
1
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
mV
P-P
CC
Voltage Range
Input Current
●
●
●
●
●
0
V
– 1.8V
CC
V
M
M
–0.5
0.5
µA
V
SHDN Voltage LO, Chip Disabled
SHDN Voltage HI, Chip Enabled
SHDN Input Current
V
V
= 2.7V to 6V
= 2.7V to 6V
0.35
CC
1.4
V
CC
SHDN = 3.6V
(Note 8)
22
300 to 7000
–32 to 10
220
36
µA
RF Input Frequency Range
IN
MHz
dBm
Ω
RF Input Power Range
IN
RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V
CC
RF AC Input Resistance
IN
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
RF Input Shunt Capacitance
IN
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
equation: BW = 0.35/rise time.
of a device may be impaired.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 7: Capacitive loading greater than this value may result in circuit
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
instability.
Note 3: The rise time at V
is measured between 1.3V and 2.3V.
OUT
Note 8: Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
5530f
2
LTC5530
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VOUT vs RF Input Power and VCC
1000MHz
Output Voltage vs Supply Voltage
(RF Input Signal Off)
Supply Current vs Supply Voltage
(RF Input Signal Off)
130
125
120
115
110
5600
4800
4000
3200
2400
1600
800
500
480
T
= 25°C
GAIN = 2
A
GAIN = 2
GAIN = 2
T
= –40°C
A
T
= 85°C
A
T
T
= 25°C
A
A
460
440
T
= 25°C
A
= –40°C
V
CC
= 6V
= 5V
= 4V
= 3V
T
= 85°C
V
CC
V
CC
V
CC
A
420
0
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8 12
3.0
3.5 4.0 4.5
SUPPLY VOLTAGE V (V)
5.5
6.0
2.5 3.0
3.5 4.0 4.5
5.0 5.5
6.0
2.5
5.0
RF INPUT POWER (dBm)
SUPPLY VOLTAGE V (V)
CC
CC
5530 G03
5530 G01
5530 G02
Typical Detector Characteristics,
300MHz
Typical Detector Characteristics,
2000MHz
Typical Detector Characteristics,
1000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
GAIN = 2
GAIN =2
GAIN =2
T
= –40°C
T = –40°C
A
A
T
= –40°C
A
T
= 25°C
T
A
= 25°C
A
T
= 25°C
A
T
= 85°C
T
A
= 85°C
A
T
= 85°C
A
400
400
400
0
0
0
–16
–16
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5530 G06
5530 G04
5530 G05
Typical Detector Characteristics,
3000MHz
Typical Detector Characteristics,
4000MHz
Typical Detector Characteristics,
5000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
GAIN = 2
GAIN = 2
GAIN = 2
T
= –40°C
A
T
= –40°C
T
= –40°C
A
A
T
= 25°C
A
T
= 25°C
A
T = 25°C
A
T
A
= 85°C
T
= 85°C
T
A
= 85°C
A
400
400
400
0
0
0
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5530 G07
5530 G08
5530 G09
5530f
3
LTC5530
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics,
6000MHz
Typical Detector Characteristics,
7000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
V
= 3.6V
V
= 3.6V
CC
CC
GAIN = 2
GAIN = 2
3200
2800
2400
2000
1600
1200
800
T
= –40°C
A
T
= –40°C
A
T
= 25°C
A
T
= 25°C
A
T
A
= 85°C
T
= 85°C
A
400
400
0
0
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5530 G10
5530 G11
Typical Detector Characteristics,
300MHz
Typical Detector Characteristics,
1000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
V
= 3.6V
CC
CC
GAIN = 4
GAIN = 4
T
= –40°C
A
T
= –40°C
A
T
= 25°C
A
T
= 25°C
A
T
A
= 85°C
T
= 85°C
A
400
400
0
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
5530 G12
5530 G13
5530f
4
LTC5530
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power
2000MHz
VOUT Slope vs RF Input Power
1000MHz
VOUT Slope vs RF Input Power
300MHz
1000
100
10
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
GAIN = 2
CC
GAIN = 2
CC
GAIN = 2
T
= –40°C
A
T
= –40°C
A
T
= –40°C
A
T
A
= 85°C
T
A
= 85°C
T = 85°C
A
A
T
= 25°C
T
= 25°C
T
A
= 25°C
A
1
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G16
5530 G14
5530 G15
VOUT Slope vs RF Input Power
3000MHz
VOUT Slope vs RF Input Power
4000MHz
VOUT Slope vs RF Input Power
5000MHz
1000
100
10
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
GAIN = 2
CC
GAIN = 2
CC
GAIN = 2
T
A
= –40°C
T
= –40°C
T = –40°C
A
A
T
= 85°C
T
A
= 85°C
T = 85°C
A
A
T
= 25°C
T
A
= 25°C
A
T
= 25°C
A
1
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G19
5530 G17
5530 G18
VOUT Slope vs RF Input Power
7000MHz
VOUT Slope vs RF Input Power
6000MHz
1000
100
10
1000
100
10
V
= 3.6V
V
= 3.6V
CC
CC
GAIN = 2
GAIN = 2
T
= –40°C
A
T
= –40°C
A
T
A
= 85°C
T
T
= 85°C
= 25°C
A
T
= 25°C
A
A
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5530 G20
5530 G21
5530f
5
LTC5530
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
290.45
234.41
178.25
137.31
109.17
86.30
68.65
57.48
49.79
43.56
38.67
34.82
31.68
29.13
27.17
25.73
24.56
23.18
22.31
20.73
19.88
19.40
19.05
19.08
19.55
20.85
21.94
20.60
19.29
18.69
18.53
18.74
19.79
19.75
19.99
–136.22
–162.54
–170.53
–159.89
–147.57
–136.18
–121.74
–107.60
–96.72
–86.70
–77.91
–70.13
–62.86
–56.01
–49.83
–44.24
–39.74
–35.35
–30.62
–26.88
–22.31
–18.23
–14.25
–10.21
–6.30
5530 TA03
5508 TA03
0.3000GHz-7.000GHz
–2.84
–1.49
–0.07
2.99
6.61
10.39
14.35
17.91
20.77
22.47
5530f
6
LTC5530
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
216.45
190.63
161.98
133.17
113.08
94.55
75.33
63.52
55.19
48.64
43.73
39.71
36.47
33.69
31.61
29.78
28.27
26.63
26.12
24.20
23.28
22.60
22.21
22.15
22.61
23.90
24.97
23.51
22.25
21.57
21.43
21.69
22.68
22.81
23.07
–76.47
–98.28
–112.03
–111.53
–109.05
–107.08
–98.50
–88.19
–80.05
–72.23
–64.81
–58.31
–52.27
–46.77
–41.25
–36.61
–32.39
–28.12
–23.97
–20.75
–16.69
–12.77
–9.08
5530 TA04
0.3000GHz-7.000GHz
5508 TA04
–5.24
–1.58
1.53
2.62
4.00
6.94
10.62
14.02
17.77
21.24
24.21
25.56
5530f
7
LTC5530
U
U
U
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
ensure that the part is in shutdown when no input is
applied. In shutdown VOUT is connected to ground via a
280Ω resistor.
VM (Pin 4): Negative Input to Buffer Amplifier.
VOUT (Pin 5): Detector Output.
GND (Pin 2): Ground.
V
CC (Pin6):PowerSupplyVoltage, 2.7Vto6V. VCC should
SHDN (Pin 3): Shutdown Input. A logic low on the SHDN
pinplacesthepartinshutdownmode.Alogichighenables
the part. SHDN has an internal 160k pulldown resistor to
be bypassed appropriately with ceramic capacitors.
W
BLOCK DIAGRA
RF
SOURCE
V
CC
6
BIAS
SHUTDOWN
500Ω
SD
1
RF
IN
+
500Ω
BUFFER
V
V
5
4
OUT
M
–
31k
25pF
+
180Ω
100Ω
RF DET
24k
–
SD
SD
40k
50µA
50µA
GND
2
160k
5530 BD
3
SHDN
5530f
8
LTC5530
U
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U U
APPLICATIO S I FOR ATIO
Operation
4MHz
(GAIN)
RB
(RA +RB)
BANDWIDTH =
= 4MHz •
The LTC5530 RF detector integrates several functions to
provideRFpowerdetectionoverfrequenciesrangingfrom
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
odepeakdetectorandlevelshiftamplifiertoconverttheRF
input signal to DC and a delay circuit to avoid voltage tran-
sients at VOUT when powering up. The LTC5530 has both
shutdown and gain setting capabilities.
A capacitor can be placed across the feedback resistor RA
to shape the frequency response. In addition the amplifier
can be used as a comparator. VM can be connected to a
reference voltage. When the internal detector voltage
(which is connected to the positive input of the buffer
amplifier) exceeds the external voltage of VM, VOUT will
switch high.
Buffer Amplifier
RF Detector
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The negative terminal VM is brought
outtoapinforgainselection.Externalresistorsconnected
between VOUT and VM (RA) and VM to ground (RB) will set
the amplifier gain.
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
RA
RB
GAIN = 1+
Shutdown
Theamplifierisunitygainstable;howeveraminimumgain
of two is recommended to improve low output voltage
accuracy. The amplifier bandwidth is 2MHz for a gain of 2.
The part is in shutdown mode when SHDN is low. The
supply current is reduced to < 2µA and VOUT is shorted to
ground via a 280Ω resistor. When SHDN is asserted high,
the part is enabled after about 8µs.
For increased gain applications, the bandwidth is reduced
according to the formula:
Demo Board Schematic
V
CC
2.7V TO 6V
C1
C4
39pF
LTC5530ES6
0.1µF
RF
IN
C2
1
2
3
6
5
4
100pF
RF
V
IN
CC
R1
GND V
SHDN
V
OUT
OUT
(OPT)
C3
R3
10k
R2
22k
(OPT)
V
M
V
CC
R4
10k
SHDN
5530 DB
5530f
9
LTC5530
W U U
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APPLICATIO S I FOR ATIO
Applications
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
TheLTC5530canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–32dBmto10dBmforfrequenciesfrom300MHzto7GHz.
The LTC5530 can be used for RF power detection and
control. Figure 1 is an example of transmitter power
control, using the LTC5530 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200Ω resistor (R1) forms a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5530 RF input
pin. In the actual product implementation, component
valuesforthecapacitivetapmaybedifferentdependingon
parts placement, PCB parasitics and parameters of the
antenna.
Operation at higher frequencies is achievable. Consult
factory for more information.
The LTC5530 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
R1
C1
200Ω
1%
0.5pF
±0.05pF
Tx PA
MODULE
Li-Ion
0.1µF
LTC5530ES6
CELL BAND
1
2
3
6
5
4
RF
V
DIPLEXER
IN
CC
GND V
SHDN
OUT
PCS BAND
R2
R3
V
M
DISABLE ENABLE
MOBILE
VPC
BSE
PHONE
DSP
5530 F01
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
5530f
10
LTC5530
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5530f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LTC5530
RELATED PARTS
PART NUMBER DESCRIPTION
Infrastructure
COMMENTS
LT5511
LT5512
LT5515
LT5516
LT5517
LT5519
LT5520
LT5522
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
DC-3GHz High Signal Level Downconverting Mixer
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
40MHz to 900MHz Direct Conversion Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC®5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
LTC5508
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5531
300MHz to 7GHz Precision RF Power Detector
300MHz to 7GHz Precision RF Power Detector
Precision V
Precision V
Offset Control and Shutdown
OUT
OUT
LTC5532
Offset Control, Adjustable Gain and Offset
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
LT5506
LT5546
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
LTC1758
LTC1957
LTC4400
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
RF Power Controller
RF Power Controller
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
LTC4403
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5530f
LT/TP 0304 1K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
LINEAR TECHNOLOGY CORPORATION 2004
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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