LTC5531ES6 [Linear]
Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment; 精密300MHz至7GHz的RF检波器，带有关断与失调调节
| 型号： | LTC5531ES6 |
| 厂家： | 
Linear |
| 描述： | Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment |
| 文件： | 总12页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5531
Precision 300MHz to 7GHz
RF Detector with Shutdown
and Offset Adjustment
U
DESCRIPTIO
FEATURES
The LTC®5531 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 300MHz to 7GHz*
■
Wide Input Power Range: –32dBm to 10dBm
■
Buffered Detector Output
■
Precision VOUT Offset Control
■
Wide VCC Range of 2.7V to 6V
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin. A power saving shutdown mode
reduces current to less than 2µA. The initial offset voltage
of 120mV ±35mV can be precisely adjusted using the
VOS pin.
■
Low Operating Current: 500µA
■
Low Shutdown Current: <2µA
■
Available in a Low Profile (1mm) SOT-23 Package
U
APPLICATIO S
■
The LTC5531 operates with input power levels from
–32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
802.11a, 802.11b, 802.11g, 802.15, 802.16
■
Multimode Mobile Phone Products
■
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
■
*Higher frequency operation is achievable with reduced performance. Consult factory for more
■
information.
■
■
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TYPICAL APPLICATIO
VOUT Output Voltage vs RF Input Power
3600
V
V
A
= 0V
OS
CC
2000MHz
1000MHz
300MHz to 7GHz RF Power Detector
= 3.6V
3200
2800
2400
2000
1600
1200
800
T
= 25°C
33pF
4000MHz
3000MHz
LTC5531
1
2
3
6
5
4
RF
V
CC
RF
V
CC
IN
INPUT
100pF
0.1µF
GND
V
OUT
300MHz
V
OS
SHDN
5000MHz
6000MHz
7000MHz
DISABLE ENABLE
V
OS
REFERENCE
5531 TA01
400
0
–18 –14
–30 –26 –22
–10 –6 –2
2
6
10
RF INPUT POWER (dBm)
5531 TA02
5531f
1
LTC5531
W W U W
U
W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
VCC, VOUT, SHDN, VOS .................................... –0.3V to 6.5V
RFIN Voltage ......................................(VCC ± 1.5V) to 7V
RFIN Power (RMS).............................................. 12dBm
NUMBER
TOP VIEW
LTC5531ES6
RF
1
6 V
5 V
4 V
IN
CC
I
VOUT ...................................................................... 5mA
GND 2
OUT
OS
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
SHDN 3
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LTBBQ
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
VOS = 0V and SHDN = HI unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Operating Current
Shutdown Current
●
●
●
●
2.7
CC
I
I
I
= 0mA
VOUT
0.5
0.7
2
mA
µA
VCC
VCC
SHDN = LO
0.01
V
OUT
(No RF Input)
R
LOAD
= 2k, V = 0V
85
2
100 to 140
1
155
mV
mV
OS
SHDN = LO
= 1.75V, V = 2.7V, ∆V < 10mV
OUT
V
V
V
V
V
V
V
V
Output Current
Enable Time
Bandwidth
V
OUT
●
●
4
8
2
mA
µs
OUT
OUT
OUT
OUT
OUT
OUT
CC
SHDN = LO to HI, C
= 33pF, R
= 2k
LOAD
20
33
LOAD
C
LOAD
= 33pF, R
= 2k (Note 4)
MHz
pF
LOAD
Load Capacitance
Slew Rate
(Notes 6, 7)
●
V
V
= 1V Step, C
= 33pF, R = 2k (Note 3)
LOAD
3
1
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
mV
P-P
CC
Voltage Range
Input Current
●
●
●
●
●
0
1
V
OS
OS
–0.5
0.5
µA
V
SHDN Voltage, Chip Disabled
SHDN Voltage, Chip Enabled
SHDN Input Current
V
V
= 2.7V to 6V
= 2.7V to 6V
0.35
CC
1.4
V
CC
SHDN = 3.6V
(Note 8)
22
300 to 7000
–32 to 10
220
36
µA
RF Input Frequency Range
IN
MHz
dBm
Ω
RF Input Power Range
IN
RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V
CC
RF AC Input Resistance
IN
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
RF Input Shunt Capacitance
IN
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
equation: BW = 0.35/rise time.
of a device may be impaired.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 7: Capacitive loading greater than this value may result in circuit
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
instability.
Note 3: The rise time at V
is measured between 1.3V and 2.3V.
OUT
Note 8: Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
5531f
2
LTC5531
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Output Voltage vs
VCC Supply Voltage
(RF Input Signal Off)
ICC Power Supply Current vs
VCC Supply Voltage
(RF Input Signal Off)
VOUT vs RF Input Power and VOS
fRF = 300MHz
,
135
130
125
120
115
520
500
480
460
440
420
3600
3200
2800
2400
2000
1600
1200
800
V
OS
= 0V
V
OS
= 0V
V
T
= 3.6V
CC
A
T
T
= –40°C
= 25°C
A
= 25°C
T
= 85°C
A
A
T
T
= 25°C
A
A
T
A
= 85°C
V
= 1V
OS
= –40°C
V
V
= 0.5V
= 0.2V
OS
OS
400
V
= 0V
OS
0
3.0
3.5 4.0 4.5
SUPPLY VOLTAGE (V)
5.5
6.0
2.5 3.0
3.5 4.0 4.5
5.0 5.5
6.0
–16
2.5
5.0
–32 –28 –24 –20
–12 –8 –4
0
4
8
SUPPLY VOLTAGE (V)
RF INPUT POWER (dBm)
5531 G01
5531 G02
5531 G03
VOUT vs RF Input Power and VOS
fRF = 1000MHz
,
VOUT vs RF Input Power and VCC
Supply Voltage, fRF = 1000MHz
5600
3600
3200
2800
2400
2000
1600
1200
800
V
T
= 0V
V
T
= 3.6V
OS
A
CC
A
= 25°C
= 25°C
4800
4000
3200
2400
1600
800
V
= 1V
OS
V
= 6V
= 5V
= 4V
= 3V
CC
V
CC
V
CC
V
CC
V
= 0.5V
= 0.2V
OS
400
V
OS
V
= 0V
OS
0
0
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8 12
–16
–32 –28 –24 –20
–12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5531 G05
5531 G04
Typical Detector Characteristics,
300MHz
Typical Detector Characteristics,
1000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
OS
V
CC
= 0V
= 3.6V
V
OS
V
CC
= 0V
= 3.6V
T
A
= –40°C
T
= –40°C
A
T
= 25°C
T
A
= 25°C
A
T
A
= 85°C
T
A
= 85°C
400
400
0
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
5531 G07
5531 G06
5531f
3
LTC5531
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics,
2000MHz
Typical Detector Characteristics,
3000MHz
Typical Detector Characteristics,
4000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
OS
V
CC
= 0V
= 3.6V
V
OS
V
CC
= 0V
= 3.6V
V
V
= 0V
= 3.6V
OS
CC
T
= –40°C
A
T
A
= –40°C
T
= –40°C
A
T
A
= 25°C
T
= 25°C
A
T
= 25°C
A
T
= 85°C
T
A
= 85°C
T
= 85°C
A
A
400
400
400
0
0
0
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
10
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
10
5531 G07
5531 G09
5531 G10
Typical Detector Characteristics,
5000MHz
Typical Detector Characteristics,
6000MHz
3600
3200
2800
2400
2000
1600
1200
800
3600
V
V
= 0V
= 3.6V
V
OS
V
CC
= 0V
= 3.6V
OS
CC
3200
2800
2400
2000
1600
1200
800
T
= –40°C
T = –40°C
A
A
T
= 25°C
A
T
= 25°C
A
T
= 85°C
T
A
= 85°C
A
400
400
0
0
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
10
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
10
5531 G11
5531 G12
Typical Detector Characteristics,
7000MHz
V
OUT Slope vs RF Input Power
at 300MHz
3600
3200
2800
2400
2000
1600
1200
800
1000
100
10
V
V
= 0V
= 3.6V
OS
CC
T
= –40°C
A
T
= 25°C
A
T
= –40°C
A
T
= 85°C
A
T
A
= 85°C
T
= 25°C
A
400
0
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
10
5531 G14
5531 G13
5531f
4
LTC5531
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power
at 1000MHz
VOUT Slope vs RF Input Power
at 2000MHz
VOUT Slope vs RF Input Power
at 3000MHz
1000
100
10
1000
100
10
1000
100
10
V
V
= 0V
= 3.6V
V
V
= 0V
= 3.6V
V
V
= 0V
= 3.6V
OS
CC
OS
CC
OS
CC
T
= –40°C
T
= –40°C
T
= –40°C
A
A
A
T
= 85°C
T
A
= 85°C
T = 85°C
A
A
A
T
= 25°C
T
= 25°C
T = 25°C
A
A
1
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5531 G15
5531 G16
5531 G17
V
OUT Slope vs RF Input Power
VOUT Slope vs RF Input Power
at 5000MHz
at 4000MHz
1000
100
10
1000
V
V
= 0V
V
V
= 0V
= 3.6V
OS
CC
OS
CC
= 3.6V
100
10
1
T
= –40°C
A
T
= –40°C
A
T
= 85°C
T = 85°C
A
A
T
= 25°C
A
T
= 25°C
A
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5531 G18
5531 G19
VOUT Slope vs RF Input Power
at 7000MHz
VOUT Slope vs RF Input Power
at 6000MHz
1000
100
10
1000
100
10
V
V
= 0V
= 3.6V
V
V
= 0V
= 3.6V
OS
CC
OS
CC
T
= –40°C
T
= –40°C
A
A
T
= 85°C
A
T
= 85°C
A
T
= 25°C
T
= 25°C
A
A
1
1
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
–30 –25 –20 –15 –10 –5
RF INPUT POWER (dBm)
0
5
5531 G20
5531 G21
5531f
5
LTC5531
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
290.45
234.41
178.25
137.31
109.17
86.30
68.65
57.48
49.79
43.56
38.67
34.82
31.68
29.13
27.17
25.73
24.56
23.18
22.31
20.73
19.88
19.40
19.05
19.08
19.55
20.85
21.94
20.60
19.29
18.69
18.53
18.74
19.79
19.75
19.99
–136.22
–162.54
–170.53
–159.89
–147.57
–136.18
–121.74
–107.60
–96.72
–86.70
–77.91
–70.13
–62.86
–56.01
–49.83
–44.24
–39.74
–35.35
–30.62
–26.88
–22.31
–18.23
–14.25
–10.21
–6.30
5508 TA03
0.3000GHz-7.000GHz
–2.84
–1.49
–0.07
2.99
6.61
10.39
14.35
17.91
20.77
22.47
5531f
6
LTC5531
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
216.45
190.63
161.98
133.17
113.08
94.55
75.33
63.52
55.19
48.64
43.73
39.71
36.47
33.69
31.61
29.78
28.27
26.63
26.12
24.20
23.28
22.60
22.21
22.15
22.61
23.90
24.97
23.51
22.25
21.57
21.43
21.69
22.68
22.81
23.07
–76.47
–98.28
–112.03
–111.53
–109.05
–107.08
–98.50
–88.19
–80.05
–72.23
–64.81
–58.31
–52.27
–46.77
–41.25
–36.61
–32.39
–28.12
–23.97
–20.75
–16.69
–12.77
–9.08
0.3000GHz-7.000GHz
5508 TA04
–5.24
–1.58
1.53
2.62
4.00
6.94
10.62
14.02
17.77
21.24
24.21
25.56
5531f
7
LTC5531
U
U
U
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
applied. In shutdown VOUT is connected to ground via a
280Ω resistor.
VOS (Pin 4): VOUT Offset Voltage Adjustment. This pin
adjusts the starting VOUT voltage when no RF signal is
present. For VOS from 0V to 120mV, VOUT is unaffected by
VOS. For VOS > 120mV, VOUT is the sum of VOS plus the
detected RF signal.
GND (Pin 2): Ground.
SHDN (Pin 3): Shutdown Input. A logic low on the SHDN
pinplacesthepartinshutdownmode.Alogichighenables
the part. SHDN has an internal 160k pulldown resistor to
ensure that the part is in shutdown when no input is
V
OUT (Pin 5): Detector Output.
VCC (Pin6):PowerSupplyVoltage, 2.7Vto6V. VCC should
be bypassed appropriately with ceramic capacitors.
W
BLOCK DIAGRA
RF
SOURCE
V
CC
6
SD
+
BUFFER
V
OUT
5
BIAS
SHUTDOWN
–
500Ω
1
30k
RF
IN
500Ω
30k
180Ω
100Ω
SD
31k
25pF
+
+
–
V
OS
RF DET
4
80k
24k
–
SD
80k
50µA
50µA
120mV
GND
2
160k
+
5531 BD
3
SHDN
5531f
8
LTC5531
U
W
U U
APPLICATIO S I FOR ATIO
Operation
the input range of a variety of analog-to-digital converters.
VOUT will not change until VOS exceeds 120mV. The
voltage at VOUT for VOS ≥120mV and with no RF signal
present is:
The LTC5531 RF detector integrates several functions to
provideRFpowerdetectionoverfrequenciesrangingfrom
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
odepeakdetectorandlevelshiftamplifiertoconverttheRF
input signal to DC and a delay circuit to avoid voltage tran-
sients at VOUT when powering up. The LTC5531 has both
shutdown and voltage offset adjustment capabilities.
V
OUT = VOS
VOUT will exactly track VOS above 120mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
Buffer Amplifier
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The amplifier has a bandwidth of
2MHz and a fixed internal gain of two.
The VOS input controls the DC input voltage to the buffer
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The buffer is initially
trimmed to approximately 120mV with VOS connected to
ground.
Shutdown
The part is in shutdown mode when SHDN is low. The
supply current is reduced to < 2µA and VOUT is shorted to
ground via a 280Ω resistor. When SHDN is asserted high,
the part is enabled after about 8µs.
The VOS pin is used to change the initial VOUT starting
voltage. ThisfunctionenablestheLTC5531outputtospan
Demo Board Schematic
V
CC
2.7V TO 6V
C1
C4
39pF
LTC5531ES6
0.1µF
RF
IN
C2
100pF
1
2
3
6
5
4
RF
V
IN
CC
R1
GND V
V
OUT
OUT
(OPT)
C3
(OPT)
V
OS
SHDN V
OS
22k
V
CC
SHDN
5531 DB
5531f
9
LTC5531
W U U
U
APPLICATIO S I FOR ATIO
Applications
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
TheLTC5531canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–32dBmto10dBmforfrequenciesfrom300MHzto7GHz.
The LTC5531 can be used for RF power detection and
control. Figure 1 is an example of transmitter power
control, using the LTC5531 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200Ω resistor (R1) forms a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5531 RF input
pin. In the actual product implementation, component
valuesforthecapacitivetapmaybedifferentdependingon
parts placement, PCB parasitics and parameters of the
antenna.
Operation at higher frequencies is achievable. Consult
factory for more information.
The LTC5531 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
R1
C1
200Ω
1%
0.5pF
±0.05pF
Tx PA
MODULE
Li-Ion
0.1µF
LTC5531ES6
CELL BAND
1
2
3
6
5
4
RF
V
DIPLEXER
IN
CC
GND V
OUT
PCS BAND
OFFSET
ADJUSTMENT
SHDN V
OS
DISABLE ENABLE
MOBILE
PHONE
DSP
VPC
BSE
5532 F01
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
5531f
10
LTC5531
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5531f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LTC5531
RELATED PARTS
PART NUMBER DESCRIPTION
Infrastructure
COMMENTS
LT5511
LT5512
LT5515
LT5516
LT5517
LT5519
LT5520
LT5522
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
DC-3GHz High Signal Level Downconverting Mixer
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
40MHz to 900MHz Direct Conversion Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC®5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
LTC5508
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision V
Offset Control, Adjustable Gain and Offset
OUT
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
LT5506
LT5546
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
LTC1758
LTC1957
LTC4400
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
RF Power Controller
RF Power Controller
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
LTC4403
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones
5531f
LT/TP 0104 1K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
LINEAR TECHNOLOGY CORPORATION 2004
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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