LTC5530_技术文档

LT5527

400MHz to 3.7GHz

High Signal Level

Downconverting Mixer

U

FEATURES

DESCRIPTIO

The LT^®5527 active mixer is optimized for high linearity,

wide dynamic range downconverter applications. The IC

includes a high speed differential LO buffer amplifier

driving a double-balanced mixer. Broadband, integrated

transformers on the RF and LO inputs provide single-

ended 50Ω interfaces. The differential IF output allows

convenient interfacing to differential IF filters and amplifi-

ers, or is easily matched to drive 50Ω single-ended, with

or without an external transformer.

■

50

Ω

Single-Ended RF and LO Ports

■

Wide RF Frequency Range: 400MHz to 3.7GHz*

High Input IP3: 24.5dBm at 900MHz

23.5dBm at 1900MHz

■

Conversion Gain: 3.2dB at 900MHz

2.3dB at 1900MHz

Integrated LO Buffer: Low LO Drive Level

High LO-RF and LO-IF Isolation

Low Noise Figure: 11.6dB at 900MHz

12.5dB at 1900MHz

Very Few External Components

Enable Function

4.5V to 5.25V Supply Voltage Range

■

The RF input is internally matched to 50Ω from 1.7GHz to

3GHz, and the LO input is internally matched to 50Ω from

1.2GHz to 5GHz. The frequency range of both ports is

easily extended with simple external matching. The IF

output is partially matched and usable for IF frequencies

up to 600MHz.

■

^{16-Lead (4mm ×}U^{4mm) QFN Package}

APPLICATIO S

The LT5527’s high level of integration minimizes the total

solution cost, board space and system-level variation.

, LTC and LT are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

*Operation over a wider frequency range is possible with reduced performance. Consult factory for

information and assistance.

■

Cellular, WCDMA, TD-SCDMA and UMTS

Infrastructure

■

GSM900/GSM1800/GSM1900 Infrastructure

■

900MHz/2.4GHz/3.5GHz WLAN

■

MMDS, WiMAX

■

High Linearity Downmixer Applications

U

TYPICAL APPLICATIO

High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure

1.9GHz Conversion Gain, IIP3, SSB NF and

LO-RF Leakage vs LO Power

LO INPUT

–3dBm (TYP)

24

22

20

18

16

14

12

10

8

–20

–25

–30

–35

–40

–45

–50

–55

–60

–65

–70

–75

IIP3

LT5527

IF = 240MHz

LOW SIDE LO

T

= 25°C

A

CC

4.7pF

V

= 5V

+

–

100nH

IF

SSB NF

1nF

IF

220nH

100nH

OUTPUT

240MHz

LO-RF

4.7pF

RF

INPUT

6

4

G

C

BIAS

EN

2

–9

–7

–5

–3

–1

1

3

V

CC1

GND

CC2

LO POWER (dBm)

5V

5527 TA01b

1nF

1µF

5527 TA01a

5527f

1

LT5527

W W

U W

U

ABSOLUTE AXI U RATI GS

PACKAGE/ORDER I FOR ATIO

(Note 1)

Supply Voltage (V_CC1, V_CC2, IF⁺, IF^–) ...................... 5.5V

Enable Voltage ............................... –0.3V to V_CC+ 0.3V

LO Input Power (380MHz to 4GHz) .................. +10dBm

LO Input DC Voltage ............................ –1V to V_CC+ 1V

RF Input Power (400MHz to 4GHz) .................. +12dBm

RF Input DC Voltage ............................................ ±0.1V

Operating Temperature Range ............... –40°C to 85°C

Storage Temperature Range ................ –65°C to 125°C

Junction Temperature (T_J)................................... 125°C

TOP VIEW

ORDER PART

NUMBER

16 15 14 13

NC

RF

NC

1

2

3

4

12 GND

LT5527EUF

+

11 IF

17

–

IF

10

9

GND

5

6

7

8

UF PART MARKING

5527

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

T_JMAX= 125°C, θ_JA= 37°C/W

EXPOSED PAD (PIN 17) IS GND

MUST BE SOLDERED TO PCB

Consult LTC Marketing for parts specified with wider operating temperature ranges.

DC ELECTRICAL CHARACTERISTICS

V_CC= 5V, EN = High, T_A= 25°C, unless otherwise specified. Test circuit shown in Figure 1. (Note 3)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Power Supply Requirements (V

Supply Voltage

)

CC

4.5

5

5.25

V DC

Supply Current

V

(Pin 7)

23.2

2.8

52

mA

CC1

(Pin 6)

CC2

+

–

IF + IF (Pin 11 + Pin 10)

Total Supply Current

60

88

78

Enable (EN) Low = Off, High = On

Shutdown Current

EN = Low

100

µA

V DC

µA

Input High Voltage (On)

Input Low Voltage (Off)

EN Pin Input Current

Turn-ON Time

3

0.3

90

EN = 5V DC

50

3

µs

Turn-OFF Time

3

µs

AC ELECTRICAL CHARACTERISTICS

Test circuit shown in Figure 1. (Notes 2, 3)

MIN

PARAMETER

CONDITIONS

TYP

MAX

UNITS

RF Input Frequency Range

No External Matching (Midband)

With External Matching (Low Band or High Band)

1700 to 3000

MHz

400

380

3700

LO Input Frequency Range

No External Matching

With External Matching

1200 to 3500

MHz

IF Output Frequency Range

RF Input Return Loss

LO Input Return Loss

IF Output Impedance

LO Input Power

Requires Appropriate IF Matching

0.1 to 600

>10

MHz

dB

Z = 50Ω, 1700MHz to 3000MHz

O

Z = 50Ω, 1200MHz to 3400MHz

O

>12

dB

Differential at 240MHz

407Ω||2.5pF

R||C

1200MHz to 3500MHz

380MHz to 1200MHz

–8

–5

–3

0

2

5

dBm

5527f

2

LT5527

AC ELECTRICAL CHARACTERISTICS

IF output measured at 240MHz, unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3, 4)

Standard Downmixer Application: V_CC= 5V, EN = High, T_A= 25°C,

P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), f_LO= f_RF– f_IF, P_LO= –3dBm (0dBm for 450MHz and 900MHz tests),

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Conversion Gain

RF = 450MHz, IF = 140MHz, High Side LO

RF = 900MHz, IF = 140MHz

RF = 1700MHz

RF = 1900MHz

RF = 2200MHz

RF = 2650MHz

RF = 3500MHz, IF = 380MHz

2.5

3.4

2.3

2.0

1.8

0.3

dB

Conversion Gain vs Temperature

Input 3rd Order Intercept

T = –40°C to 85°C, RF = 1900MHz

–0.018

dB/°C

A

RF = 450MHz, IF = 140MHz, High Side LO

RF = 900MHz, IF = 140MHz

RF = 1700MHz

RF = 1900MHz

RF = 2200MHz

RF = 2650MHz

RF = 3500MHz, IF = 380MHz

23.2

24.5

24.2

23.5

22.7

20.8

18.2

dBm

Single-Sideband Noise Figure

RF = 450MHz, IF = 140MHz, High Side LO

RF = 900MHz, IF = 140MHz

RF = 1700MHz

RF = 1900MHz

RF = 2200MHz

13.3

11.6

12.1

12.5

13.2

13.9

16.1

dB

RF = 2650MHz

RF = 3500MHz, IF = 380MHz

LO to RF Leakage

f

= 400MHz to 2100MHz

= 2100MHz to 3200MHz

≤–44

≤–36

dBm

LO

LO to IF Leakage

f

= 400MHz to 700MHz

= 700MHz to 3200MHz

≤–40

≤–50

dBm

LO

RF to LO Isolation

f

= 400MHz to 2200MHz

= 2200MHz to 3700MHz

>43

>38

dB

RF

RF to IF Isolation

f

= 400MHz to 800MHz

= 800MHz to 3700MHz

>42

>54

dB

RF

2RF-2LO Output Spurious Product

900MHz: f = 830MHz at –5dBm, f = 140MHz

–60

–65

dBc

RF

IF

(f = f + f /2)

1900MHz: f = 1780MHz at –5dBm, f = 240MHz

RF

LO

IF

RF IF

3RF-3LO Output Spurious Product

(f = f + f /3)

900MHz: f = 806.67MHz at –5dBm, f = 140MHz

–73

–63

dBc

RF

IF

1900MHz: f = 1740MHz at –5dBm, f = 240MHz

RF

LO

IF

RF

IF

Input 1dB Compression

RF = 450MHz, IF = 140MHz, High Side LO

RF = 900MHz, IF = 140MHz

RF = 1900MHz

9.5

8.9

9.0

dBm

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

Note 2: 450MHz, 900MHz and 3500MHz performance measured with

Note 4: SSB Noise Figure measurements performed with a small-signal

noise source and bandpass filter on RF input, and no other RF signal

applied.

external LO and RF matching. See Figure 1 and Applications Information.

Note 3: Specifications over the –40°C to 85°C temperature range are

assured by design, characterization and correlation with statistical process

controls.

5527f

3

LT5527

W U

Midband (No external RF/LO matching)

TYPICAL AC PERFOR A CE CHARACTERISTICS

V_CC= 5V, EN = High, P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P_LO= –3dBm, IF output measured at 240MHz,

unless otherwise noted. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and NF

vs RF Frequency

LO Leakage vs LO Frequency

RF Isolation vs RF Frequency

–30

–35

–40

–45

–50

–55

–60

–65

–70

–75

–80

–85

–90

–30

–35

–40

–45

–50

–55

–60

–65

–70

–75

–80

–85

–90

24

22

20

18

16

14

12

10

8

T

= 25°C

T

= 25°C

LO

A

P

IIP3

= –3dBm

LO-RF

RF-LO

SSB NF

LO-IF

T

= 25°C

A

RF-IF

IF = 240MHz

LOW SIDE LO

HIGH SIDE LO

6

4

G

C

2

0

1200

1800 2100 2400 2700 3000

LO FREQUENCY (MHz)

1500

1700

1900

2300

RF FREQUENCY (MHz)

2500

2700

1700

1900

2100

2300

2500

2700

2100

RF FREQUENCY (MHz)

5527 G02

5527 G03

5527 G01

Conversion Gain and IIP3

vs Temperature (Low Side LO)

Conversion Gain and IIP3

vs Temperature (High Side LO)

1900MHz Conversion Gain, IIP3

and NF vs Supply Voltage

25

24

23

22

21

20

19

18

17

16

15

10

9

8

7

6

5

4

3

2

1

0

24

22

20

25

24

23

22

21

20

19

18

17

16

15

10

9

8

7

6

5

4

3

2

1

0

IIP3

LOW SIDE LO

IF = 240MHz

–40°C

18

16

14

25°C

85°C

IF = 240MHz

1700MHz

1900MHz

2200MHz

IF = 240MHz

12

10

8

1700MHz

1900MHz

2200MHz

SSB NF

6

G

C

4

G

C

2

0

5

–50 –25

25

50

75

100

4.5

4.75

5.25

5.5

0

–50 –25

25

50

75

100

0

TEMPERATURE (°C)

SUPPLY VOLTAGE (V)

5527 G05

5527 G06

5527 G04

1700MHz Conversion Gain, IIP3

and NF vs LO Power

1900MHz Conversion Gain, IIP3

and NF vs LO Power

2200MHz Conversion Gain, IIP3

and NF vs LO Power

24

25

23

21

19

17

15

13

11

9

24

22

20

18

16

14

12

10

8

22

20

18

16

14

12

10

8

IIP3

LOW SIDE LO

IF = 240MHz

–40°C

IIP3

LOW SIDE LO

IF = 240MHz

–40°C

25°C

85°C

SSB NF

85°C

SSB NF

LOW SIDE LO

IF = 240MHz

–40°C

25°C

6

7

6

85°C

G

C

G

C

4

5

4

G

C

2

3

2

0

1

0

–9

–5

–3

–1

1

3

–7

–9

–5

–3

–1

1

3

–9

–5

–3

–1

1

3

–7

LO INPUT POWER (dBm)

5527 G09

5527 G07

5527 G08

5527f

4

LT5527

W U

Midband (No external RF/LO matching)

V_CC= 5V, EN = High, P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P_LO= –3dBm, IF output measured at 240MHz,

TYPICAL AC PERFOR A CE CHARACTERISTICS

unless otherwise noted. Test circuit shown in Figure 1.

IF Output Power, IM3 and IM5 vs

RF Input Power (2 Input Tones)

IF_OUT, 2 × 2 and 3 × 3 Spurs

2 × 2 and 3 × 3 Spurs

vs RF Input Power (Single Tone)

vs LO Power (Single Tone)

10

0

15

5

–50

–55

–60

–65

–70

–75

–80

–85

–90

–95

–100

T

= 25°C

A

LO = 1660MHz

IF = 240MHz

IF

3RF-3LO

OUT

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

–5

(RF = 1740MHz)

IF

OUT

(RF = 1900MHz)

–15

–25

–35

–45

–55

–65

–75

–85

–95

T

= 25°C

A

2RF-2LO

(RF = 1780MHz)

RF1 = 1899.5MHz

RF2 = 1900.5MHz

LO = 1660MHz

3RF-3LO

(RF = 1740MHz)

2RF-2LO

(RF = 1780MHz)

T

= 25°C

A

IM3

LO = 1660MHz

IF = 240MHz

P

= –5dBm

IM5

RF

–21

–15 –12 –9

–6

–3

0

–18

–9 –6

3

6

–9

–7

–3

–1

1

3

–18 –15 –12

–3

0

9

12

–5

RF INPUT POWER (dBm/TONE) 5527 G10

LO INPUT POWER (dBm)

5527 G12

5527 G11

RF INPUT POWER (dBm)

High Band (3500MHz application with external RF matching) V_CC= 5V, EN = High, P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests,

∆f = 1MHz), low side LO, P_LO= –3dBm, IF output measured at 380MHz, unless otherwise noted. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and SSB

NF vs RF Frequency

3500MHz Conversion Gain, IIP3

and SSB NF vs LO Power

LO Leakage and RF-LO Isolation

vs LO and RF Frequency

–20

–30

–40

–50

–60

–70

60

50

40

30

20

10

20

18

16

14

12

10

8

19

17

15

13

11

9

IIP3

SSB NF

LO-RF

LOW SIDE LO

IF = 380MHz

LOW SIDE LO

IF = 380MHz

= 25°C

RF-LO

T

= 25°C

A

7

6

5

4

3

LO-IF

G

C

2

1

G

C

0

–1

3200

3400

3600

3000

3800

3300

3400

3500

3600

3700

–9

–7

–3

–1

1

3

–5

5527 G15

5527 G13

LO/RF FREQUENCY (MHz)

RF FREQUENCY (MHz)

LO INPUT POWER (dBm)

5527 G14

Low Band (450MHz application with external RF/LO matching) V_CC= 5V, EN = High, P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests,

∆f = 1MHz), P_LO= 0dBm, IF output measured at 140MHz, unless otherwise noted. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and NF

vs RF Frequency

450MHz Conversion Gain,

IIP3 and NF vs LO Power

LO Leakage vs LO Frequency

24

22

20

18

16

14

12

10

8

–20

–30

24

22

20

T

= 25°C

LO

A

P

= 0dBm

IIP3

HIGH SIDE LO

IF = 140MHz

–40°C

25°C

85°C

HIGH SIDE LO

T

= 25°C

LO-IF

(450MHz APP)

A

18

16

14

LO-RF

(900MHz APP)

IF = 140MHz

–40

–50

SSB NF

12

10

8

LO-RF

(450MHz APP)

–60

–70

–80

LO-IF

(900MHz APP)

6

G

C

4

2

G

C

0

450

–6

–2

0

2

4

6

400

600

800

1000

1200

400

425

475

500

–4

5527 G19

LO INPUT POWER (dBm)

5527 G20

LO FREQUENCY (MHz)

5527 G18

RF FREQUENCY (MHz)

5527f

5

LT5527

W U

Low Band (900MHz application with external

TYPICAL AC PERFOR A CE CHARACTERISTICS

RF/LO matching) V_CC= 5V, EN = High, P_RF= –5dBm (–5dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P_LO= 0dBm, IF output measured at

140MHz, unless otherwise noted. Test circuit shown in Figure 1.

Conversion Gain, IIP3 and NF vs

900MHz Conversion Gain, IIP3 and

NF vs LO Power (Low Side LO)

IF_OUT, 2 × 2 and 3 × 3 Spurs

RF Frequency (900MHz Low Side

Application)

vs RF Input Power (Single Tone)

25

23

21

19

17

15

13

11

9

20

10

25

23

21

19

17

15

13

11

9

T

= 25°C

A

IIP3

LO = 760MHz

IF = 140MHz

IIP3

LOW SIDE LO

IF = 140MHz

–40°C

0

IF

LOW SIDE LO

OUT

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

(RF = 900MHz)

T

= 25°C

A

25°C

IF = 140MHz

85°C

SSB NF

2RF-2LO

(RF = 830MHz)

SSB NF

7

G

C

3RF-3LO

(RF = 806.67MHz)

5

G

C

3

1

–6

–2

0

2

4

6

–4

–18 –15 –12 –9 –6 –3

0

3

6

9

12

750

850

900

950

1000 1050

800

LO INPUT POWER (dBm)

5527 G22

RF FREQUENCY (MHz)

5527 G21

5527 G23

RF INPUT POWER (dBm)

Conversion Gain, IIP3 and NF vs

RF Frequency (900MHz High Side

Application)

900MHz Conversion Gain, IIP3 and

NF vs LO Power (High Side LO)

2 × 2 and 3 × 3 Spurs

vs LO Power (Single Tone)

25

23

21

19

17

15

13

11

9

25

23

21

19

17

15

13

11

9

–40

–45

–50

–55

–60

–65

–70

–75

–80

–85

–90

T

= 25°C

A

IIP3

LO = 760MHz

IF = 140MHz

IIP3

HIGH SIDE LO

IF = 140MHz

–40°C

P

= –5dBm

HIGH SIDE LO

RF

T

= 25°C

A

2RF-2LO

(RF = 830MHz)

IF = 140MHz

25°C

85°C

SSB NF

3RF-3LO

(RF = 806.67MHz)

7

G

C

5

G

C

3

1

750

850

900

950

1000 1050

–6

–2

0

2

4

6

–6

–4

0

2

4

6

800

–4

–2

RF FREQUENCY (MHz)

5527 G24

LO INPUT POWER (dBm)

5527 G25

LO INPUT POWER (dBm)

5527 G26

W U

Test circuit shown in Figure 1.

TYPICAL DC PERFOR A CE CHARACTERISTICS

Supply Current vs Supply Voltage

Shutdown Current vs Supply Voltage

82

81

80

79

78

76

75

74

73

72

71

100

10

1

85°C

60°C

25°C

0°C

–40°C

85°C

60°C

25°C

0°C

–40°C

0.1

4.5

4.75

5

5.25

5.5

4.5

4.75

5

5.25

5.5

5527 G16

SUPPLY VOLTAGE (V)

5527 G17

SUPPLY VOLTAGE (V)

5527f

6

LT5527

U

PI FU CTIO S

NC(Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally.

These pins should be grounded on the circuit board for

improved LO-to-RF and LO-to-IF isolation.

be externally connected to the V_CC2pin and decoupled

with 1000pF and 1µF capacitors.

GND (Pins 9, 12): Ground. These pins are internally

connected to the backside ground for improved isolation.

They should be connected to the RF ground on the circuit

board, although they are not intended to replace the

primary grounding through the backside contact of the

package.

IF^–, IF⁺(Pins 10, 11): Differential Outputs for the IF

Signal. An impedance transformation may be required to

match the outputs. These pins must be connected to V_CC

through impedance matching inductors, RF chokes or a

transformer center tap.

RF (Pin 3): Single-Ended Input for the RF Signal. This pin

is internally connected to the primary side of the RF input

transformer,whichhaslowDCresistancetoground.Ifthe

RF source is not DC blocked, then a series blocking

capacitormustbeused.TheRFinputisinternallymatched

from 1.7GHz to 3GHz. Operation down to 400MHz or up to

3700MHz is possible with simple external matching.

EN (Pin 5): Enable Pin. When the input enable voltage is

higherthan3V, themixercircuitssuppliedthroughPins6,

7, 10 and 11 are enabled. When the input voltage is less

than 0.3V, all circuits are disabled. Typical input current is

50µAforEN=5Vand0µAwhenEN=0V.TheENpinshould

not be left floating. Under no conditions should the EN pin

voltage exceed V_CC+ 0.3V, even at start-up.

LO (Pin 15): Single-Ended Input for the Local Oscillator

Signal. This pin is internally connected to the primary side

of the LO transformer, which is internally DC blocked. An

external blocking capacitor is not required. The LO input is

internally matched from 1.2GHz to 5GHz. Operation down

to 380MHz is possible with simple external matching.

V_CC2(Pin 6): Power Supply Pin for the Bias Circuits.

Typical current consumption is 2.8mA. This pin should be

externally connected to the V_CC1pin and decoupled with

1000pF and 1µF capacitors.

Exposed Pad (Pin 17): Circuit Ground Return for the

EntireIC.Thismustbesolderedtotheprintedcircuitboard

ground plane.

V_CC1(Pin 7): Power Supply Pin for the LO Buffer Circuits.

Typical current consumption is 23.2mA. This pin should

W

BLOCK DIAGRA

15

LO

REGULATOR

EXPOSED

PAD

LIMITING

AMPLIFIERS

17

V

CC1

12

11

GND

LINEAR

AMPLIFIER

+

IF

–

RF

IF

3

10

9

DOUBLE-BALANCED

MIXER

GND

BIAS

EN

V

7

CC2

CC1

5

6

5525 BD

5527f

7

LT5527

TEST CIRCUITS

LO

IN

L4

C4

RF

GND

ε_R= 4.4

0.018"

0.062"

0.018"

BIAS

GND

16

15 14

13

EXTERNAL MATCHING

FOR LOW FREQUENCY

LO ONLY

NC LO NC NC

1

2

12

11

T1

NC

GND

L1

L2

+

3

2

1

4

5

•

IF

Z

O

C3

LT5527

RF

IN

50Ω

3

4

10

9

IF

OUT

240MHz

–

IF

GND

NC

RF

L (mm)

C5

NC

EN

V

CC2 CC1

EXTERNAL MATCHING

FOR LOW BAND OR

HIGH BAND ONLY

5

6

7

8

EN

V

CC

C1

C2

APPLICATION

RF LO

LO MATCH

RF MATCH

GND

L4

C4

10pF

5.6pF

2.7pF

—

L

C5

5527 F01

450MHz High Side 6.8nH

900MHz Low Side 3.9nH

4.5mm

1.3mm

4.5mm

12pF

3.9pF

0.5pF

900MHz High Side

3500MHz Low Side

—

REF DES

C1

VALUE

1000pF

1µF

SIZE

0402

0603

0402

PART NUMBER

REF DES

L4, C4, C5

L1, L2

VALUE

SIZE

PART NUMBER

AVX 04025C102JAT

AVX 0603ZD105KAT

AVX 04025A2R7CAT

0402

0603

See Applications Information

Toko LLQ1608-A82N

C2

82nH

4:1

C3

2.7pF

T1

M/A-Com ETC4-1-2 (2MHz to 800MHz)

Figure 1. Downmixer Test Schematic—Standard IF Matching (240MHz IF)

LO

IN

L4

C4

DISCRETE

IF BALUN

16

15 14

13

EXTERNAL MATCHING

FOR LOW FREQUENCY

LO ONLY

NC LO NC NC

1

2

12

11

C6

L1

NC

GND

+

IF

C3

IF

OUT

240MHz

Z

O

L3

LT5527

RF

IN

50Ω

C7

3

4

10

9

–

IF

GND

NC

RF

L (mm)

C5

NC

L2

EN

V

CC2 CC1

EXTERNAL MATCHING

FOR LOW BAND OR

HIGH BAND ONLY

5

6

7

8

EN

V

CC

C1

C2

GND

5527 F02

REF DES

C1, C3

C2

VALUE

1000pF

1µF

SIZE

0402

0603

0402

PART NUMBER

REF DES

L4, C4, C5

L1, L2

VALUE

SIZE

PART NUMBER

AVX 04025C102JAT

AVX 0603ZD105KAT

AVX 04025A4R7CAT

0402

0603

See Applications Information

Toko LLQ1608-AR10

100nH

220nH

C6, C7

4.7pF

L3

Toko LLQ1608-AR22

Figure 2. Downmixer Test Schematic—Discrete IF Balun Matching (240MHz IF)

5527f

8

LT5527

W U U

APPLICATIO S I FOR ATIO

U

Introduction

at Pin 3, which improves the 1.7GHz return loss to greater

than 20dB. Likewise, the 2.7GHz match can be improved

to greater than 30dB with a series 1.5nH inductor. A series

1.5nH/2.7pFnetworkwillsimultaneouslyoptimizethelower

and upper band edges and expand the RF input bandwidth

to 1.1GHz-3.3GHz. Measured RF input return losses for

these three cases are also plotted in Figure 4a.

The LT5527 consists of a high linearity double-balanced

mixer, RF buffer amplifier, high speed limiting LO buffer

amplifier and bias/enable circuits. The RF and LO inputs

are both single ended. The IF output is differential. Low

side or high side LO injection can be used.

Two evaluation circuits are available. The standard evalu-

ationcircuit, showninFigure1, incorporatestransformer-

based IF matching and is intended for applications that

require the lowest LO-IF leakage levels and the widest IF

bandwidth. The second evaluation circuit, shown in Fig-

ure 2, replaces the IF transformer with a discrete IF balun

for reduced solution cost and size. The discrete IF balun

delivers comparable noise figure and linearity, higher

conversion gain, but degraded LO-IF leakage and reduced

IF bandwidth.

Alternatively, the input match can be shifted down, as low

as400MHzorupto3700MHz, byaddingashuntcapacitor

(C5)totheRFinput.A450MHzinputmatchisrealizedwith

C5 = 12pF, located 4.5mm away from Pin 3 on the evalu-

ation board’s 50Ω input transmission line. A 900MHz in-

put match requires C5 = 3.9pF, located at 1.3mm. A

3500MHz input match is realized with C5 = 0.5pF, located

0

NO EXTERNAL

MATCHING

–5

RF Input Port

–10

–15

The mixer’s RF input, shown in Figure 3, consists of an

integrated transformer and a high linearity differential

amplifier. The primary terminals of the transformer are

connected to the RF input pin (Pin 3) and ground. The

secondary side of the transformer is internally connected

to the amplifier’s differential inputs.

–20

SERIES 1.5nH

SERIES 2.7pF

–25

–30

SERIES 1.5nH

2.7 3.2

FREQUENCY (GHz)

0.2 0.7 1.2 1.7 2.2

3.7 4.2

One terminal of the transformer’s primary is internally

grounded. If the RF source has DC voltage present, then a

couplingcapacitormustbeusedinserieswiththeRFinput

pin.

5527 F04a

(4a) Series Reactance Matching

0

–5

The RF input is internally matched from 1.7GHz to 3GHz,

requiring no external components over this frequency

range. The input return loss, shown in Figure 4a, is typi-

cally 10dB at the band edges. The input match at the lower

band edge can be optimized with a series 2.7pF capacitor

–10

–15

–20

–25

–30

NO EXTERNAL

MATCHING

3.5GHz

900MHz

C5 = 3.9pF

L = 1.3mm

C5 = 0.5pF

450MHz

C5 = 12pF

L = 4.5mm

EXTERNAL MATCHING

FOR LOW BAND OR

HIGH BAND ONLY

TO

MIXER

2.7 3.2

0.2 0.7 1.2 1.7 2.2

RF FREQUENCY (GHz)

3.7 4.2

Z

O

= 50Ω

RF

IN

L = L (mm)

RF

3

5527 F04b

C5

(4b) Series Shunt Matching

5527 F03

Figure 4. RF Input Return Loss With

and Without External Matching

Figure 3. RF Input Schematic

5527f

9

LT5527

W U U

U

APPLICATIO S I FOR ATIO

at 4.5mm. This series transmission line/shunt capacitor

matching topology allows the LT5527 to be used for mul-

tiple frequency standards without circuit board layout

modifications. The series transmission line can also be

replaced with a series chip inductor for a more compact

layout.

The LO input is internally matched from 1.2GHz to 5GHz,

although the maximum useful frequency is limited to

3.5GHz by the internal amplifiers. The input match can be

shifted down, as low as 750MHz, with a single shunt

capacitor (C4) on Pin 15. One example is plotted in

Figure 6 where C4 = 2.7pF produces an 850MHz to

1.2GHz match.

Input return loss for these three cases (450MHz, 900MHz

and 3500MHz) are plotted in Figure 4b. The input return

loss with no external matching is repeated in Figure 4b for

comparison.

LO input matching below 750MHz requires the series

inductor (L4)/shunt capacitor (C4) network shown in

Figure 5. Two examples are plotted in Figure 6 where L4 =

3.9nH/C4 = 5.6pF produces a 650MHz to 830MHz match

and L4 = 6.8nH/C4 = 10pF produces a 540MHz to 640MHz

match. The evaluation boards do not include pads for L4,

so the circuit trace needs to be cut near Pin 15 to insert L4.

A low cost multilayer chip inductor is adequate for L4.

RF input impedance and S11 versus frequency (with no

external matching) is listed in Table 1 and referenced to

Pin 3. The S11 data can be used with a microwave circuit

simulator to design custom matching networks and simu-

late board-level interfacing to the RF input filter.

The optimum LO drive is –3dBm for LO frequencies above

1.2GHz, although the amplifiers are designed to accom-

modate several dB of LO input power variation without

significant mixer performance variation. Below 1.2GHz,

Table 1. RF Input Impedance vs Frequency

FREQUENCY

(MHz)

INPUT

IMPEDANCE

S11

MAG

0.825

0.708

0.644

0.600

0.529

0.467

0.386

0.275

0.193

0.175

0.209

0.297

0.431

0.564

0.745

ANGLE

173.9

152.5

144.3

137.2

123.2

107.4

89.3

50

4.8 + j2.6

9.0 + j11.9

11.9 + j15.3

14.3 + j18.2

19.4 + j23.8

26.1 + j29.8

37.3 + j33.9

57.4 + j29.7

71.3 + j10.1

64.6 – j13.9

53.0 – j21.8

35.0 – j21.2

20.7 – j9.0

14.2 + j6.2

10.4 + j31.9

300

EXTERNAL

MATCHING

FOR LOW BAND

450

600

ONLY

L4

C4

TO

MIXER

900

LO

IN

1200

1500

1850

2150

2450

2650

3000

3500

4000

5000

LO

15

V

LIMITER

BIAS

60.6

20.6

V

CC2

–36.8

–70.3

–111.2

–155.8

164.8

113.3

5527 F05

Figure 5. LO Input Schematic

0

–5

L4 = 0nH

L4 = 6.8nH

C4 = 2.7pF

C4 = 10pF

–10

–15

–20

–25

–30

NO

EXTERNAL

MATCHING

LO Input Port

The mixer’s LO input, shown in Figure 5, consists of an

integratedtransformerandhighspeedlimitingdifferential

amplifiers. The amplifiers are designed to precisely drive

the mixer for the highest linearity and the lowest noise

figure. An internal DC blocking capacitor in series with the

transformer’s primary eliminates the need for an external

blocking capacitor.

L4 = 3.9nH

C4 = 5.6pF

0.1

1

5

LO FREQUENCY (GHz)

5527 F06

Figure 6. LO Input Return Loss

5527f

10

LT5527

W U U

APPLICATIO S I FOR ATIO

U

0dBmLOdriveisrecommendedforoptimumnoisefigure,

although –3dBm will still deliver good conversion gain

and linearity.

output impedance is listed in Table 3. This data is refer-

enced to the package pins (with no external components)

and includes the effects of IC and package parasitics. The

IF output can be matched for IF frequencies as low as

several kHz or as high as 600MHz.

Custom matching networks can be designed using the

port impedance data listed in Table 2. This data is refer-

enced to the LO pin with no external matching.

Table 3. IF Output Impedance vs Frequency

DIFFERENTIAL OUTPUT

Table 2. LO Input Impedance vs Frequency

FREQUENCY (MHz)

IMPEDANCE (R || X )

IF

FREQUENCY

(MHz)

INPUT

S11

1

415||-j64k

IMPEDANCE

MAG

0.977

0.847

0.740

0.635

0.463

0.330

0.209

0.093

0.032

0.052

0.101

0.124

0.120

0.096

0.226

ANGLE

–15.9

–86.7

–124.8

–158.7

146.7

106.9

78.5

10

415||-j6.4k

415||-j909

413||-j453

407||-j264

403||-j211

395||-j165

387||-j138

381||-j124

50

30.4 – j355.7

8.7 – j52.2

9.4 – j25.4

11.5 – j8.9

19.7 + j12.8

34.3 + j24.3

49.8 + j21.3

53.8 + j8.9

50.4 + j3.2

45.1 + j0.3

41.1 + j2.4

41.9 + j8.1

49.0 + j12.0

55.4 + j8.6

33.2 + j8.7

70

300

140

240

300

380

450

500

450

600

900

1200

1500

1850

2150

2450

2650

3000

3500

4000

5000

61.7

80.5

176.5

163.1

129.8

87.9

The following three methods of differential to single-

ended IF matching will be described:

• Direct 8:1 transformer

• Lowpass matching + 4:1 transformer

• Discrete IF balun

53.2

146.7

IF Output Port

The IF outputs, IF⁺and IF^–, are internally connected to the

collectors of the mixer switching transistors (see Fig-

ure 7). Both pins must be biased at the supply voltage,

which can be applied through the center tap of a trans-

former or through matching inductors. Each IF pin draws

26mAofsupplycurrent(52mAtotal).Foroptimumsingle-

ended performance, these differential outputs should be

combined externally through an IF transformer or a

discrete IF balun circuit. The standard evaluation board

(see Figure 1) includes an IF transformer for impedance

transformation and differential to single-ended transfor-

mation. A second evaluation board (see Figure 2) realizes

the same functionality with a discrete IF balun circuit.

L1

L2

+

4:1

IF

OUT

11

10

50Ω

C3

V

CC

–

V

CC

5527 F07

Figure 7. IF Output with External Matching

0.7nH

2.5pF

+

–

IF

11

10

R

S

415Ω

The IF output impedance can be modeled as 415Ω in

parallel with 2.5pF at low frequencies. An equivalent

small-signal model (including bondwire inductance) is

shown in Figure 8. Frequency-dependent differential IF

0.7nH

5527 F08

Figure 8. IF Output Small-Signal Model

5527f

11

LT5527

W U U

U

APPLICATIO S I FOR ATIO

Direct 8:1 IF Transformer Matching

chip inductors (L1 and L2) improve the mixer’s conver-

sion gain by a few tenths of a dB, but have little effect on

linearity. Measured output return losses for each case are

plotted in Figure 10 for the simple 8:1 transformer method

and for the lowpass/4:1 transformer method.

For IF frequencies below 100MHz, the simplest IF match-

ing technique is an 8:1 transformer connected across the

IF pins. The transformer will perform impedance transfor-

mation and provide a single-ended 50Ω output. No other

matching is required. Measured performance using this

technique is shown in Figure 9. This matching is easily

implemented on the standard evaluation board by short-

ing across the pads for L1 and L2 and replacing the 4:1

transformer with an 8:1 (C3 not installed).

Table 4. IF Matching Element Values

IF

FREQUENCY

(MHz)

L1, L2

(nH)

IF

PLOT

C3 (pF)

—

TRANSFORMER

1

2

3

4

5

6

1 to 100

140

Short

120

110

82

TC8-1 (8:1)

—

ETC4-1-2 (4:1)

25

190

2.7

23

IIP3

21

240

2.7

RF = 900MHz

380

56

2.2

19

17

15

13

11

9

HIGH SIDE LO AT 0dBm

V

= 5V DC

CC

A

450

43

2.2

T

= 25°C

C4 = 2.7pF, C5 = 3.9pF

SSB NF

0

–5

7

5

G

C

–10

3

1

–15

10 20 30 40 50 60 70 80 90 100

IF OUTPUT FREQUENCY (MHz)

5527 F09

–20

–25

–30

2

4

5

Figure 9. Typical Conversion Gain, IIP3 and

SSB NF Using an 8:1 IF Transformer

6

3

1

0

50 100 150 200 250 300 350 400 450 500

IF FREQUENCY (MHz)

Lowpass + 4:1 IF Transformer Matching

5527 F10

The lowest LO-IF leakage and wide IF bandwidth are

realizedbyusingthesimple,threeelementlowpassmatch-

ing network shown in Figure 7. Matching elements C3, L1

andL2, inconjunctionwiththeinternal2.5pFcapacitance,

form a 400Ω to 200Ω lowpass matching network which is

tuned to the desired IF frequency. The 4:1 transformer

then transforms the 200Ω differential output to a 50Ω

single-ended output.

Figure 10. IF Output Return Losses

with Lowpass/Transformer Matching

Discrete IF Balun Matching

For many applications, it is possible to replace the IF

transformer with the discrete IF balun shown in Figure 2.

The values of L1, L2, C6 and C7 are calculated to realize a

180 degree phase shift at the desired IF frequency and

provide a 50Ω single-ended output, using the equations

listed below. Inductor L3 is calculated to cancel the

internal2.5pFcapacitance.L3alsosuppliesbiasvoltageto

the IF⁺pin. Low cost multilayer chip inductors are ad-

equate for L1 and L2. A high Q wire-wound chip inductor

is recommended for L3 to maximize conversion gain and

minimize DC voltage drop to the IF⁺pin. C3 is a DC

This matching network is most suitable for IF frequencies

above 40MHz or so. Below 40MHz, the value of the series

inductors (L1 and L2) becomes unreasonably high, and

couldcausestabilityproblems, dependingontheinductor

value and parasitics. Therefore, the 8:1 transformer tech-

nique is recommended for low IF frequencies.

Suggested lowpass matching element values for several

IF frequencies are listed in Table 4. High-Q wire-wound

blocking capacitor.

5527f

12

LT5527

W U U

APPLICATIO S I FOR ATIO

U

0

R_IF•R_OUT

L1, L2 =

–5

ω_IF

–10

–15

1

C6,C7 =

ω_IF• R_IF•R_OUT

190MHz

240MHz

–20

–25

–30

X_IF

L3 =

380MHz

ω_IF

450MHz

Compared to the lowpass/4:1 transformer matching tech-

nique, this network delivers approximately 0.8dB higher

conversion gain (since the IF transformer loss is elimi-

nated) and comparable noise figure and IIP3. At a ±15%

offset from the IF center frequency, conversion gain and

noise figure degrade about 1dB. Beyond ±15%, conver-

sion gain decreases gradually but noise figure increases

rapidly. IIP3 is less sensitive to bandwidth. Other than IF

bandwidth, the most significant difference is LO-IF leak-

age,whichdegradestoapproximately–38dBmcompared

to the superior performance realized with the lowpass/4:1

transformer matching.

50 100 150 200 250 300 350 400 450 500 550

IF FREQUENCY (MHz)

5527 F11

Figure 11. IF Output Return Losses with Discrete Balun Matching

26

24

22

20

18

16

14

12

10

8

0

IIP3

–10

–20

–30

–40

–50

–60

190IF

240IF

380IF

450IF

LOW SIDE LO (–3dBm)

T

= 25°C

A

LO-IF

Discrete IF balun element values for four common IF

frequencies are listed in Table 5. The corresponding

measured IF output return losses are shown in Figure 11.

The values listed in Table 5 differ from the calculated

values slightly due to circuit board and component

parasitics. Typical conversion gain, IIP3 and LO-IF leak-

age, versus RF input frequency, for all four IF frequency

examples is shown in Figure 12. Typical conversion gain,

IIP3 and noise figure versus IF output frequency for the

same circuits are shown in Figure 13.

6

G

C

4

2

1700

1900

2100

2300

2500

2700

RF INPUT FREQUENCY (MHz)

5527 F12

Figure 12. Conversion Gain, IIP3 and LO-IF Leakage vs RF Input

Frequency Using Discrete IF Balun Matching

26

24

22

20

18

16

14

12

10

8

IIP3

LOW SIDE LO (–3dBm)

= 25°C

Table 5. Discrete IF Balun Element Values (R

= 50Ω)

OUT

T

A

IF FREQUENCY

(MHz)

L1, L2

(nH)

C6, C7

(pF)

L3

(nH)

190

240

380

450

120

100

56

6.8

4.7

3

220

68

SSB NF

190IF

240IF

380IF

450IF

6

4

2

G

C

47

2.7

47

0

350 400

150 200 250 300

450 500 550

For fully differential IF architectures, the IF transformer

can be eliminated. An example is shown in Figure 14,

wherethemixer’sIFoutputismatcheddirectlyintoaSAW

filter. Supply voltage to the mixer’s IF pins is applied

IF OUTPUT FREQUENCY (MHz)

5527 F13

Figure 13. Conversion Gain, IIP3 and SSB NF vs IF Output

Frequency Using Discrete IF Balun Matching

5527f

13

LT5527

W U U

U

APPLICATIO S I FOR ATIO

through matching inductors in a band-pass IF matching

network. The values of L1, L2 and C3 are calculated to

resonate at the desired IF frequency with a quality factor

that satisfies the required IF bandwidth. The L and C

values are then adjusted to account for the mixer’s

internal 2.5pF capacitance and the SAW filter’s input

capacitance. In this case, the differential IF output imped-

ance is 400Ω since the bandpass network does not

transform the impedance.

SAW

IF

FILTER

L1

L2

AMP

+

–

IF

C3

5527 F14

V

CC

SUPPLY

DECOUPLING

Figure 14. Bandpass IF Matching for Differential IF Architectures

AdditionalmatchingelementsmayberequirediftheSAW

filter’s input impedance is less than or greater than 400Ω.

Contact the factory for application assistance.

Standard Evaluation Board Layout

Discrete IF Evaluation Board Layout

5527f

14

LT5527

U

PACKAGE DESCRIPTIO

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

0.72 ±0.05

4.35 ± 0.05

2.90 ± 0.05

2.15 ± 0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 ±0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

PIN 1 NOTCH R = 0.20 TYP

OR 0.25 × 45° CHAMFER

0.75 ± 0.05

R = 0.115

TYP

4.00 ± 0.10

(4 SIDES)

15

16

0.55 ± 0.20

PIN 1

TOP MARK

(NOTE 6)

1

2

2.15 ± 0.10

(4-SIDES)

(UF) QFN 09-04

0.200 REF

0.30 ± 0.05

0.65 BSC

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. DRAWING NOT TO SCALE

3. ALL DIMENSIONS ARE IN MILLIMETERS

4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

5. EXPOSED PAD SHALL BE SOLDER PLATED

6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION

ON THE TOP AND BOTTOM OF PACKAGE

5527f

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-

tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.

15

LT5527

RELATED PARTS

PART NUMBER DESCRIPTION

COMMENTS

Infrastructure

LT5511

LT5512

LT5514

High Linearity Upconverting Mixer

RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer

DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer

Ultralow Distortion, IF Amplifier/ADC Driver

with Digitally Controlled Gain

850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range

LT5515

LT5516

1.5GHz to 2.5GHz Direct Conversion Quadrature

Demodulator

20dBm IIP3, Integrated LO Quadrature Generator

21.5dBm IIP3, Integrated LO Quadrature Generator

21dBm IIP3, Integrated LO Quadrature Generator

0.8GHz to 1.5GHz Direct Conversion Quadrature

Demodulator

LT5517

LT5519

40MHz to 900MHz Quadrature Demodulator

0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,

Single-Ended LO and RF Ports Operation

LT5520

LT5521

LT5522

LT5524

1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,

Single-Ended LO and RF Ports Operation

10MHz to 3700MHz High Linearity

Upconverting Mixer

24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended

LO Port Operation

400MHz to 2.7GHz High Signal Level

Downconverting Mixer

4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF

and LO Ports

Low Power, Low Distortion ADC Driver with Digitally 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control

Programmable Gain

LT5525

LT5526

High Linearity, Low Power Downconverting Mixer

Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA

CC

3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,

CC

–65dBm LO-RF Leakage

LT5528

1.5GHz to 2.4GHz High Linearity Direct I/Q

Modulator

21.8dBm OIP3 at 2GHz, –159dBm/Hz Noise Floor, 50Ω Interface at all Ports

RF Power Detectors

LT5504

800MHz to 2.7GHz RF Measuring Receiver

80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply

300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply

100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply

44dB Dynamic Range, Temperature Compensated, SC70 Package

36dB Dynamic Range, Low Power Consumption, SC70 Package

LTC^®5505

LTC5507

LTC5508

LTC5509

LTC5530

LTC5531

LTC5532

LT5534

RF Power Detectors with >40dB Dynamic Range

100kHz to 1000MHz RF Power Detector

300MHz to 7GHz RF Power Detector

300MHz to 3GHz RF Power Detector

300MHz to 7GHz Precision RF Power Detector

Precision V

Offset Control, Shutdown, Adjustable Gain

Offset Control, Shutdown, Adjustable Offset

Offset Control, Adjustable Gain and Offset

OUT

50MHz to 3GHz RF Power Detector with 60dB

Dynamic Range

±1dB Output Variation over Temperature, 38ns Response Time

LTC5536

Precision 600MHz to 7GHz RF Detector

with Fast Compatator Output

25ns Response Time, Comparator Reference Input, Latch Enable Input,

–26dBm to +12dBm Input Range

Low Voltage RF Building Block

LT5546 500MHz Quadrature Demodulator with VGA and

17MHz Baseband Bandwidth

Wide Bandwidth ADCs

17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, –7dB to

56dB Linear Power Gain

LTC1749

LTC1750

12-Bit, 80Msps

500MHz BW S/H, 71.8dB SNR

500MHz BW S/H, 75.5dB SNR

14-Bit, 80Msps

5527f

LT/TP 0305 500 • PRINTED IN THE USA

LinearTechnology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

16

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com


型号：	LTC5530
厂家：	Linear
描述：	400MHz to 3.7GHz High Signal Level Downconverting Mixer 400MHz到3.7GHz的高信号电平下变频混频器
文件：	总16页 (文件大小：222K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LTC5530 [Linear]

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