LSIR9353 [LIGITEK]

INFRARED EMITTING DIODES; 红外发光二极管
LSIR9353
型号: LSIR9353
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

INFRARED EMITTING DIODES
红外发光二极管

二极管
文件: 总7页 (文件大小:129K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
INFRARED EMITTING DIODES  
LSIR9353  
DATA SHEET  
DOC. NO : QW0905-LSIR9353  
C
REV.  
:
DATE  
:
- 2007  
30 - May  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 1/6  
PART NO. LSIR9353  
Package Dimensions  
6.0MIN  
3.0  
6.0MIN  
0.5  
2.2  
1.5  
-
+
-
+
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.  
2.Specifications are subject to change without notice.  
Features:  
1. High radiant intensity.  
2. Suitable for pulsed applications.  
3. Low average degradation.  
Descriptions:  
The LSIR9353 series are super-high efficiency Gallium Aluminum Arsenide infrared  
emitting diodes encapsulated in water clear plastic T-1 3/4 package individually  
Device Selection Guide:  
PART NO  
LSIR9353  
MATERIAL  
LENS COLOR  
Water Clear  
AlGaAs/GaAs  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 2/6  
PART NO. LSIR9353  
Absolute Maximum Ratings at Ta=25  
Ratings  
Symbol  
UNIT  
mW  
Parameter  
SIR  
100  
Power Dissipation  
PD  
IFP  
Peak Forward Current  
(300PPS,10μs Pulse)  
1
50  
A
mA  
V
IF  
Forward Current  
Reverse Voltage  
5
Vr  
Electrostatic Discharge  
Operating Temperature  
Storage Temperature  
ESD  
Topr  
Tstg  
2000  
-40 ~ +85  
-40 ~ +85  
V
Max 260for 3 sec Max  
Soldering Temperature  
Tsol  
(2mm from body)  
Electrical Optical Characteristics (Aa=25)  
Typ.  
1.0  
Max.  
PARAMETER  
Radiant Intensity  
SYMBOL Min.  
UNIT  
mW/sr  
mW/cm2  
nm  
TEST CONDITION  
0.5  
Le  
Ee  
IF=20mA  
IF=20mA  
IF=20mA  
IF=20mA  
IF=20mA  
VR=5V  
Aperture Radiant Incidence  
Peak Emission Wavelength  
Spectral Line Half Width  
Forward Voltage  
0.07 0.14  
λpeak  
△λ  
VF  
880  
50  
nm  
1.4  
1.7  
V
Reverse Current  
μA  
100  
IR  
Viewing Angle  
deg  
2θ1/2  
120  
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.  
2. The radiant intensity data did not including ±15% testing tolerance.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSIR9353  
Page 3/6  
Typical Electro-Optical Characteristics Curve  
SIR CHIP  
Fig.2 Relative Radiant Intensity vs. Wavelength  
Fig.1 Forward Current vs. Rorward Voltage  
1.0  
1000  
100  
10  
1
0.5  
0.0  
0.1  
750  
800  
850  
900  
950  
1000 1050  
0.5  
1.0  
1.5  
2.0  
2.5  
Wavelength(nm)  
Forward Voltage(V)  
Fig.3 Relative Radiant Power  
vs. Forward DC Current  
Fig.4 Relative Radiant Power  
vs. Forward Peak Current  
10.0  
10.0  
1.0  
1.0  
0.1  
0.1  
1
10  
100  
10  
100  
1000  
I
FPK(mA)  
I
FDC(mA)  
Fig.5 Forward DC Voltage vs. Temperature  
Fig.6 Relative Radiant Power vs. Temperature  
1.2  
1.1  
1.0  
0.9  
0.8  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-40 -20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
Ambient Temperature[]  
Ambient Temperature[]  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSIR9353  
Page 4/6  
Storage time:  
1.The operation of Temperatures and RH are : 5~35,RH<60%.  
2.Once the package is opened, the products should be used within a week.  
Otherwise, they should be kept in a damp proof box with descanting agent.  
Considering the tape life, we suggest our customers to use our products within  
a year(from production date).  
3.If opened more than one week in an atmosphere 5~ 35,RH<60%,  
they should be treated at 60℃±5 fo r 15hrs.  
Drive Method:  
LED is a current operated device, and therefore, require some kind of current limiting incorporated into  
the driver circuit. This current limiting typically takes the form of a current limiting resistor placed in series  
with the LED.  
Consider worst case voltage variations than could occur across the current limiting resistor. The forwrd  
current should not be allowed to change by more than 40 % of its desired value.  
Circuit model A  
LED  
Circuit model B  
LED  
(A) Recommended circuit.  
(B) The difference of brightness between LED could be found due to the VF-IF characteristics of LED.  
Cleaning:  
Use alcohol-based cleaning solvents such as isopropyl alcohol to clean the LED.  
ESD(Electrostatic Discharge):  
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic  
glove is recommended when handing these LED. All devices, equipment and machinery must be properly  
grounded.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSIR9353  
Page 5/6  
Mounting:  
1. If the leads are subjected to stress during soldering  
a printed circuit board, illumination failure may result  
immediately or later during use. For this reason,  
make sure that the intervals between the installation  
holes in the board are equal to the intervals between  
the leads (after forming if done) so that no stress is  
applied to the lead.  
(X)  
(O)  
(O)  
2. The LED lamps are designed for high-density mount-  
ing and have a structure which can alleviate mechan-  
ical stress due to clinching . Nevertheless , take care  
to avoid the occurrence of residual mechanical stress  
due to clinching .  
15°  
45°  
Anode side(cathode side on GaAlAs chips)  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LSIR9353  
Page 6/6  
Reliability Test:  
Reference  
Standard  
Description  
Test Item  
Test Condition  
1.Under Room Temperature  
2.If=20mA  
3.t=1000 hrs (-24hrs, +72hrs)  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=105 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  

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