FCX617 [KEXIN]

Switching Transistor; 开关晶体管
FCX617
型号: FCX617
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

Switching Transistor
开关晶体管

晶体 开关 晶体管
文件: 总2页 (文件大小:37K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Type  
Transistors  
Switching Transistor  
FCX617  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
Features  
+0.1  
1.80  
-0.1  
2W power dissipation.  
12A peak pulse current.  
Excellent HFE characteristics up to 12 amps.  
Extremely low saturation voltage E.g. 8mv Typ.  
Extremely low equivalent on-resistance.  
RCE(sat) 50mÙ at 3A.  
+0.1  
0.48  
-0.1  
+0.1  
0.53  
-0.1  
+0.1  
0.44  
-0.1  
1. Base  
+0.1  
3.00  
-0.1  
2. Collector  
3. Emiitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
15  
15  
5
V
V
Peak pulse current  
3
A
Continuous collector current  
ICM  
12  
A
mA  
W
Base current  
IB  
500  
1
Power dissipation  
Ptot  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
FCX617  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
15  
15  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100ìA  
IC=10mA  
IE=100ìA  
VCB=10V  
VCE=10V  
VEB=4V  
V
V
0.3  
0.3  
0.3  
100  
100  
100  
nA  
nA  
nA  
Collector Emitter Cut-Off Current  
Emitter Cut-Off Current  
ICES  
IEBO  
8
14  
IC=0.1A, IB=10mA  
IC=1A, IB=10mA  
IC=3A, IB=50mA  
IC=4A, IB=50mA  
IC=5A, IB=50mA  
70  
100  
230  
Collector-emitter saturation voltage *  
VCE(sat)  
150  
mV  
--------- 300  
-
400  
1.0  
1.0  
Base-emitter saturation voltage *  
Base-emitter ON voltage *  
VBE(sat)  
VBE(on)  
0.89  
0.82  
V
V
IC=3A, IB=50mA  
IC=3A, VCE=2V  
200  
300  
200  
150  
-----  
415  
450  
320  
240  
80  
IC=10mA, VCE=2V  
IC=200mA,VCE=2V  
IC=3A,VCE=2V  
Static Forward Current Transfer Ratio*  
hFE  
IC=5A,VCE=2V  
IC=12A,VCE=2V  
Transitional frequency  
Output capacitance  
Turn-on time  
fT  
80  
120  
30  
MHz  
pF  
IC=50mA, VCE=10V f=50MHz  
VCB=10V, f=1MHz  
IC=3A, VCC=10V  
Cobo  
t(on)  
t(off)  
40  
120  
160  
ns  
Turn-off time  
ns  
IB1=IB2=50mA  
* Pulse test: tp = 300 ìs; d  
0.02.  
Marking  
Marking  
617  
2
www.kexin.com.cn  

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