BAS125-05 [KEXIN]
Silicon Schottky Diodes; 硅肖特基二极管
| 型号： | BAS125-05 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon Schottky Diodes |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Silicon Schottky Diodes
BAS125 series
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
For low-loss, fast-recovery, meter
1
2
protection,bias isolation and clamping applications
Integrated diffused guard ring
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
Low forward voltage
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
Symbol
VR
Conditions
Values
25
Unit
V
Forward current
IF
100
500
250
150
mA
mA
mW
Surge forward current
Total power dissipation
Junction temperature
Storage temperature range
Junction-ambient
IFRM
Ptot
t
10 ms
(Note 3)
Ts < 25
Tj
Tstg
-55 to +150
< 725
Rth JA
Rth JS
Note 2
K/W
K/W
Junction-soldering point
Note
< 565
1. For detailed information see chapter Package Outlines.
2.Package mounted on alumina 15 mm
3.450 mW per package.
16.7 mm
0.7 mm.
1
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SMD Type
Diodes
Silicon Schottky Diodes
BAS125 series
Electrical Characteristics Ta = 25
Parameter
Reverse voltage
Symbol
Conditions
VR = 20 V
Min
Typ
Max
1
Unit
A
IR
VR = 25 V
10
IF = 1 mA
385
530
800
410
Forward voltage
VF
mV
pF
IF = 10 mA
IF = 35 mA
900
1.1
Diode capacitance
CT
RF
VR = 0, f= 10 kHz
IF = 5mA, f= 10 kHz
Differential forward resistance
15
Marking
Type
BAS125
13
BAS125-04 BAS125-05 BAS125-06
14 15 16
Marking
2
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