BAS125-05WE6327 [INFINEON]
Rectifier Diode, Schottky, 2 Element, 0.1A, Silicon;
| 型号： | BAS125-05WE6327 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, Schottky, 2 Element, 0.1A, Silicon 光电二极管 |
| 文件： | 总8页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS125...
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAS125-04W
BAS125-05W
BAS125-06W
BAS125-07W
3
3
3
4
3
D
1
D
2
D
2
D
2
D
1
D
1
D
1
D
2
1
2
1
2
1
2
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
SOT323
SOT323
SOT323
SOT343
Configuration
series
L (nH) Marking
S
BAS125-04W
BAS125-05W
BAS125-06W
BAS125-07W
1.4
1.4
1.4
1.6
14s
15s
16s
17s
common cathode
common anode
parallel pair
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
V
25
Diode reverse voltage
Forward current
V
R
100
500
mA
I
I
F
Non-repetitive peak surge forward current
Total power dissipation
FSM
mW
°C
P
tot
BAS125-04W, BAS125-06W, T ≤ 84°C
250
250
250
S
BAS125-05W, T ≤ 76°C
S
BAS125-07W, T ≤ 96°C
S
150
Junction temperature
Storage temperature
T
T
j
-55 ... 150
stg
1Pb-containing package may be available upon special request
2007-04-19
1
BAS125...
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
thJS
BAS125-04W, BAS125-06W
BAS125-05W
≤ 365
≤ 295
≤ 215
BAS125-07W
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current
I
nA
R
V = 20 V
-
-
-
-
100
150
R
V = 25 V
R
mV
Forward voltage
V
F
I = 1 mA
-
-
-
385
530
800
400
650
950
F
I = 10 mA
F
I = 35 mA
F
2)
-
-
20
Forward voltage matching
∆ V
F
I = 10 mA
F
AC Characteristics
-
-
-
1.1 pF
Diode capacitance
C
R
T
F
V = 0 , f = 1 MHz
R
Differential forward resistance
15
-
Ω
I = 5 mA, f = 10 kHz
F
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2∆V is the difference between lowest and highestV in a multiple diode component.
F
F
2007-04-19
2
BAS125...
Diode capacitance C = ƒ (V )
Forward resistance r = ƒ (I )
f F
T
R
f = 1MHz
f = 10 kHz
BAS 125...
EHD07117
BAS 125...
EHD07118
104
1.0
pF
C T
r f
Ω
0.8
103
102
101
100
0.6
0.4
0.2
0.0
10-2
10-1
100
101 mA 102
0
10
V
20
Ι F
VR
Reverse current I = ƒ(V )
Forward current I = ƒ (V )
F F
R
R
T = Parameter
T = Parameter
A
A
BAS 125...
EHD07115
BAS 125...
EHD07116
102
101
Ι F
Ι R
TA = 125 C
TA = 85 C
mA
µA
101
100
10-1
10-2
TA = -40C
25 C
85 C
150 C
100
10-1
TA = 25 C
10-3
0
10-2
0.0
10
V
20
0.5
V
1.0
VR
VF
2007-04-19
3
BAS125...
Forward current I = ƒ (T )
Forward current I = ƒ (T )
F S
F
S
BAS125-04W, BAS125-06W
BAS125-05W
120
mA
120
mA
80
60
40
20
0
80
60
40
20
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = ƒ (T )
F
S
BAS125-07W
120
mA
80
60
40
20
0
°C
0
15 30 45 60 75 90 105 120
150
T
S
2007-04-19
4
BAS125...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
I / I = ƒ (t )
Fmax FDC
thJS
p
BAS125-04W, BAS125-06W
p
BAS125-04W, BAS125-06W
10 2
10 3
K/W
-
D = 0
10 2
0.005
0.01
0.02
0.05
0.1
10 1
0.5
0.2
0.1
0.2
0.5
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 0
s
s
t
t
p
p
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
I / I = ƒ (t )
Fmax FDC
thJS
p
BAS125-05W
p
BAS125-05W
10 1
10 3
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
-
0.5
0.2
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -6
10 0
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
t
t
p
p
2007-04-19
5
Package SOT323
BAS125...
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2007-04-19
6
Package SOT343
BAS125...
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2007-04-19
7
BAS125...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
8
相关型号：
BAS125-06
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)
INFINEON
BAS125-06
For low-loss, fast-recovery, meter protection,bias isolation and clamping applications
TYSEMI
BAS125-06W
Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)
INFINEON
BAS125-06W
For low-loss, fast-recovery, meter protection, bias isolation and clamping application
TYSEMI
©2020 ICPDF网 联系我们和版权申明