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BAS125-06 [INFINEON]

Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications); 硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用）
BAS125-06
型号： BAS125-06
厂家： Infineon    Infineon
描述：

Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)
硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用）

肖特基二极管 仪表
文件： 总5页 (文件大小：108K)
中文：  中文翻译
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Silicon Schottky Diodes  
BAS 125 …  
● For low-loss, fast-recovery, meter protection,  
bias isolation and clamping applications  
● Integrated diffused guard ring  
● Low forward voltage  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Type  
Marking  
Ordering Code Pin Configuration  
(tape and reel)  
BAS 125  
13  
Q62702-D1316  
SOT-23  
BAS 125-04  
BAS 125-05  
BAS 125-06  
14  
15  
16  
Q62702-D1321  
Q62702-D1322  
Q62702-D1323  
1)  
For detailed information see chapter Package Outlines.  
02.96  
Semiconductor Group  
1
BAS 125 …  
● For low-loss, fast-recovery, meter protection,  
bias isolation and clamping applications  
● Integrated diffused guard ring  
● Low forward voltage  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Type  
Marking  
Ordering Code Pin Configuration  
(tape and reel)  
BAS 125-07  
17  
Q62702-D1327  
SOT-143  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
Unit  
V
Reverse voltage  
V
R
25  
Forward current  
IF  
100  
mA  
Surge forward current, t ≤ 10 ms  
Total power dissipation, TS ≤ 25 ˚C3)  
Junction temperature  
Storage temperature range  
I
FSM  
500  
P
tot  
250  
mW  
˚C  
T
j
150  
T
stg  
– 55 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 725  
≤ 565  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.  
450 mW per package.  
2)  
3)  
Semiconductor Group  
2
BAS 125 …  
Electrical Characteristics per Diode  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse current  
IR  
µA  
V
R
= 20 V  
= 25 V  
–
–
–
–
1
10  
V
R
Forward voltage  
VF  
mV  
IF  
IF  
IF  
= 1 mA  
= 10 mA  
= 35 mA  
–
–
–
385  
530  
800  
410  
–
900  
Diode capacitance  
= 0, f = 1 MHz  
C
T
–
–
1.1  
–
pF  
VR  
Differential forward resistance  
= 5 mA, f = 10 kHz  
RF  
–
15  
Ω
IF  
Semiconductor Group  
3
BAS 125 …  
Forward current I  
F
= f (V  
F)  
Forward current I  
F
= f (T  
S
; T *)  
A
*Package mounted on alumina  
BAS 125-04, -05, -06, -07  
Forward current I  
F
= f (T  
S
; T  
A
*)  
Reverse current I  
R
= f (V )  
R
*Package mounted on alumina  
BAS 125  
Semiconductor Group  
4
BAS 125 …  
Diode capacitance C  
T
= f (V  
R)  
Differential forward resistance R  
F
= f (I )  
F
f= 1 MHz  
f= 10 kHz  
Semiconductor Group  
5

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