BAS125-06 [TYSEMI]

For low-loss, fast-recovery, meter protection,bias isolation and clamping applications; 对于低损耗，快速恢复，仪表保护，偏置隔离和钳位应用

BAS125-06


型号：	BAS125-06
厂家：	TY Semiconductor Co., Ltd
描述：	For low-loss, fast-recovery, meter protection,bias isolation and clamping applications 对于低损耗，快速恢复，仪表保护，偏置隔离和钳位应用仪表
文件：	总2页 (文件大小：116K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Product specification

BAS125 series

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

3

Features

For low-loss, fast-recovery, meter

protection,bias isolation and clamping applications

Integrated diffused guard ring

Low forward voltage

1

2

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Reverse voltage

Symbol

V^R

Conditions

Values

25

Unit

V

Forward current

I^F

100

500

250

150

mA

mA

mW

Surge forward current

Total power dissipation

Junction temperature

Storage temperature range

Junction-ambient

I^FRM

P^tot

t

10 ms

(Note 3)

Ts < 25

T^j

Tstg

-55 to +150

< 725

R^{th JA}

R^{th JS}

Note 2

K/W

K/W

Junction-soldering point

Note

< 565

1. For detailed information see chapter Package Outlines.

2.Package mounted on alumina 15 mm

3.450 mW per package.

16.7 mm

0.7 mm.

http://www.twtysemi.com

4008-318-123

sales@twtysemi.com

1 of 2

Product specification

BAS125 series

Electrical Characteristics Ta = 25

Parameter

Reverse voltage

Symbol

Conditions

V^R= 20 V

Min

Typ

Max

1

Unit

A

I^R

V^R= 25 V

10

I^F= 1 mA

385

530

800

410

Forward voltage

V^F

mV

pF

I^F= 10 mA

I^F= 35 mA

900

1.1

Diode capacitance

C^T

R^F

V^R= 0, f= 10 kHz

I^F= 5mA, f= 10 kHz

Differential forward resistance

15

Marking

Type

BAS125

13

BAS125-04 BAS125-05 BAS125-06

14 15 16

Marking

http://www.twtysemi.com

sales@twtysemi.com

2 of 2

4008-318-123

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