2SJ599 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SJ599 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SJ599
Features
TO-252
Low on-resistance
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
RDS(on)1 = 75 m MAX. (VGS =-10 V, ID = -10 A)
RDS(on)2 = 110 m MAX. (VGS = -4.0 V, ID =-10 A)
Low Ciss: Ciss = 1300 pF TYP.
Built-in gate protection diode
+0.2
5.30
-0.2
+0.8
0.50
-0.7
0.127
max
+0.1
0.80
-0.1
1 Gate
+0.1
0.60
-0.1
2.3
4.60
2 Drain
3 Source
+0.15
-0.15
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
Unit
V
-60
V
20
A
20
50
Drain current(pulse) *
ID
A
PD
35
W
W
Power dissipation
TC=25
TA=25
PD
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s, duty cycle
1 %
1
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SMD Type
MOSFET
2SJ599
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
Testconditons
Min
Typ
Max
-10
10
Unit
A
Drain cut-off current
VDS=-60V,VGS=0
VGS= 20V,VDS=0
Gate leakage current
IGSS
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=-10V,ID=-1mA
1.5
8
2.0
16
60
78
720
150
50
8
2.5
V
VDS=-10V,ID=-10A
VGS=-10V,ID=-10A
VGS=-4.0V,ID=-10A
S
Yfs
75
m
Drain to source on-state resistance
RDS(on)
111
m
Input capacitance
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS=-10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
9
VGS(on)=-10V,ID=--10A ,VDD=-30V,RG=0
Turn-off delay time
Fall time
td(off)
tf
52
16
26
5
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG
ID = -20A
QGS
QGD
VDD= -48 V
VGS =-10 V
7
VF(S-D) IF = -20A, VGS = 0 V
1.0
51
102
trr
IF = -20 A, VGS = 0 V
di/dt = 100 A /
ns
nC
Qrr
s
2
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2SJ599(0)-Z-E1-AZ
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RENESAS
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NEC
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