2SJ600 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SJ600 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SJ600
Features
TO-252
Unit: mm
Low on-resistance
+0.15
-0.15
+0.1
2.30
-0.1
6.50
RDS(on)1 = 50 m MAX. (VGS =-10 V, ID = -13 A)
RDS(on)2 = 79m MAX. (VGS = -4.0 V, ID =-13 A)
Low Ciss: Ciss = 1900 pF TYP.
Built-in gate protection diode
+0.2
5.30
-0.2
+0.8
0.50
-0.7
0.127
max
+0.1
0.80
-0.1
1 Gate
+0.1
0.60
-0.1
2.3
4.60
2 Drain
3 Source
+0.15
-0.15
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
Unit
V
-60
V
20
A
25
Drain current(pulse) *
ID
A
70
45
PD
W
W
Power dissipation
TC=25
TA=25
PD
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s, duty cycle
1 %
1
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SMD Type
MOSFET
2SJ600
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
Testconditons
Min
Typ
Max
-10
10
Unit
A
Drain cut-off current
VDS=-60V,VGS=0
VGS= 20V,VDS=0
Gate leakage current
IGSS
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=-10V,ID=-1mA
1.5
10
2.0
20
2.5
V
VDS=-10V,ID=-13A
VGS=-10V,ID=-13A
VGS=-4.0V,ID=-13A
S
Yfs
41
50
79
m
Drain to source on-state resistance
RDS(on)
55
m
Input capacitance
Ciss
Coss
Crss
td(on)
tr
1900
350
140
9
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS=-10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
10
VGS(on)=-10V,ID=--13A ,VDD=-30V,RG=0
Turn-off delay time
Fall time
td(off)
tf
67
19
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QG
ID = -25A
38
QGS
QGD
VDD= -48 V
VGS =-10 V
7
10
VF(S-D) IF = -25A, VGS = 0 V
1.0
49
trr
IF = -25 A, VGS = 0 V
di/dt = 100 A /
ns
nC
Qrr
100
s
2
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