2SJ599-Z [NEC]
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE; 切换P沟道功率MOS FET工业用型号: | 2SJ599-Z |
厂家: | NEC |
描述: | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
文件: | 总4页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ599
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
ORDERING INFORMATION
The 2SJ599 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
PART NUMBER
2SJ599
PACKAGE
TO-251
2SJ599-Z
TO-252
FEATURES
• Low on-state resistance:
RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
–60
V
V
+
+
+
20
20
50
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
35
W
W
°C
(TO-252)
PT
1.0
Tch
150
Storage Temperature
Tstg
–55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
–20
40
A
EAS
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published November 2000 NS CP(K)
Printed in Japan
D14644EJ1V0DS00 (1st edition)
2000
©
2SJ599
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = –60 V, VGS = 0 V
MIN. TYP. MAX.
UNIT
µA
µA
V
–10
+
+
10
VGS = 20 V, VDS = 0 V
IGSS
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –10 A
VGS = –10 V, ID = –10 A
VGS = –4.0 V, ID = –10 A
VDS = –10 V,
1.5
8
2.0
16
60
78
1300
240
100
8
2.5
Forward Transfer Admittance
Drain to Source On-state Resistance
S
75
mΩ
mΩ
pF
pF
pF
ns
111
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V,
f = 1 MHz
td(on)
tr
td(off)
tf
ID = –10 A,
VGS(on) = –10 V,
VDD = –30 V,
9
ns
Turn-off Delay Time
Fall Time
52
16
26
5
ns
RG = 0 Ω
ns
Total Gate Charge
QG
ID = –20A,
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VDD= –48 V,
VGS = –10 V
7
IF = –20 A, VGS = 0 V
IF = –20 A, VGS = 0 V
di/dt = –100 A/µs
1.0
51
102
ns
Qrr
nC
TEST CIRCUIT 2 SWITCHING TIME
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS (−)
R
L
90%
PG
V
GS
VGS(on)
10%
VDD
50 Ω
Wave Form
0
RG
V
GS = –20 V → 0 V
PG.
VDD
VDS (−)
90%
90%
−
BVDSS
V
DS
I
AS
V
GS (−)
10% 10%
d(off)
V
DS
0
VDS
0
Wave Form
I
D
t
d(on)
t
t
f
t
r
V
DD
τ
t
on
t
off
µ
τ = 1 s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= −2 mA
RL
PG.
VDD
50 Ω
2
Preliminary Data Sheet D14644EJ1V0DS
2SJ599
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2.3±0.2
0.5±0.1
6.5±0.2
6.5±0.2
2.3±0.2
5.0±0.2
4
5.0±0.2
0.5±0.1
4
1
2
3
1
2
3
1.1±0.2
0.9
0.8
1.1±0.2
MAX. MAX.
2.3 2.3
+0.2
0.5-0.1
+0.2
0.5-0.1
0.8
1. Gate
2.3 2.3
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
3
Preliminary Data Sheet D14644EJ1V0DS
2SJ599
•
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4
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