2SD2357 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD2357 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2357
Features
Low collector-emitter saturation voltage VCE(sat).
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
10
Collector-emitter voltage
Emitter-base voltage
Collector current
10
V
5
V
1.2
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
1
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 7 V, IE = 0
Min
Typ
Max
1
Unit
ìA
V
Collector-base cutoff current
Collector-base voltage
ICBO
VCBO
VCEO
VEBO
hFE
IC = 10 ìA, IE = 0
IC = 1 mA, IB = 0
10
10
5
Collector-emitter voltage
Emitter-base voltage
V
IE = 10 ìA, IC = 0
VCE = 2 V, IC = 100 mA
V
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
200
800
VCE(sat) IC = 500 mA, IB = 5 mA
0.15
V
fT
VCB = 5 V, IE = -50 mA, f = 200 MHz
VCB = 5 V, IE = 0, f = 1 MHz
120
30
MHz
pF
Collector output capacitance
Cob
Marking
Marking
1M
1
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