2SD2358 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency output amplification); NPN硅外延平面型（对于低频输出放大）
| 型号： | 2SD2358 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For low-frequency output amplification) |
| 文件： | 总1页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SD2358
Silicon NPN epitaxial planer type
Unit: mm
2.5 0.1
1.05
0.05
For low-frequency output amplification
Complementary to 2SB1538
6.9 0.1
4.0
(1.45)
0.8
0.7
I Features
0.65 max.
• Low collector to emitter saturation voltage VCE(sat): < 0.15 V
• Allowing supply with the radial taping
0.45+−00..015
2.5 0.5 2.5 0.5
2
I Absolute Maximum Ratings Ta = 25°C
1
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
10
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
10
V
5
V
MT2 Type Package
1.2
A
IC
1
A
Collector power dissipation *
Junction temperature
Storage temperature
PC
1
W
°C
°C
Tj
150
1.2 0.1
Tstg
−55 to +150
0.65
max.
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the
*
+
0.1
0.45−0.05
board thickness of 1.7 mm for the collector portion
(HW Type)
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
VCB = 7 V, IE = 0
Min
Typ
Max
Unit
µA
V
Collector cutoff current
1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
hFE
IC = 10 µA, IE = 0
10
10
5
IC = 1 mA, IB = 0
V
IE = 10 µA, IC = 0
V
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
VCE = 2 V, IC = 100 mA
IC = 500 mA, IB = 20 mA
VCB = 5 V, IE = −50 mA, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
200
800
VCE(sat)
fT
0.15
V
MHz
pF
120
30
Collector output capacitance
Cob
1
相关型号：
2SD2358-SZ
Small Signal Bipolar Transistor, 1A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
2SD2359
Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment
TYSEMI
2SD2360-HW
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
2SD2361
Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
PANASONIC
2SD2362
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
PANASONIC
2SD2363
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
PANASONIC
©2020 ICPDF网 联系我们和版权申明