2SD2359 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency amplification); NPN硅外延平面型（低频放大）
| 型号： | 2SD2359 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.5±0.1
4.5±0.1
1.6±0.2
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
.
●
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
45°
0.4±0.08
0.4±0.04
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
marking
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
20
20
V
5
V
1:Base
1.2
A
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
IC
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Marking symbol : 1O
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
VCB = 14V, IE = 0
C = 10µA, IE = 0
min
typ
max
Unit
µA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
1
VCBO
VCEO
VEBO
hFE
I
20
20
5
IC = 1mA, IB = 0
V
IE = 10µA, IC = 0
V
Forward current transfer ratio
VCE = 2V, IC = 100mA
200
800
0.2
Collector to emitter saturation voltage VCE(sat)
IC = 500mA, IB = 10mA
0.11
100
23
V
MHz
pF
Transition frequency
fT
VCB = 6V, IE = –50mA, f = 200MHz
Collector output capacitance
Cob
VCB = 6V, IE = 0, f = 1MHz
1
Transistor
2SD2359
PC — Ta
IC — VCE
IC — VBE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
VCE=2V
25˚C
Ta=75˚C
–25˚C
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
10
600
240
200
160
120
80
IC/IB=50
VCB=6V
f=200MHz
Ta=25˚C
VCE=2V
3
1
500
400
300
200
100
0
0.3
0.1
Ta=75˚C
25˚C
Ta=75˚C
25˚C
–25˚C
0.03
0.01
–25˚C
40
0.003
0.001
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
( )
A
( )
A
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
60
50
40
30
20
10
0
IE=0
f=200MHz
Ta=25˚C
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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