2SD2359 [KEXIN]

Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
2SD2359
型号: 2SD2359
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

Silicon NPN Epitaxial Planar Type
NPN硅外延平面型

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中文:  中文翻译
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SMD Type  
Transistors  
Silicon NPN Epitaxial Planar Type  
2SD2359  
Features  
Low collector-emitter saturation voltage VCE(sat).  
Mini Power type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing and the magazine  
packing.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
20  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
20  
V
5
V
1.2  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
1
A
PC  
1
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
1
Unit  
ìA  
V
Collector-base cutoff current  
Collector-base voltage  
VCB = 14 V, IE = 0  
IC = 10 ìA, IE = 0  
IC = 1 mA, IB = 0  
VCBO  
VCEO  
VEBO  
hFE  
20  
20  
5
Collector-emitter voltage  
Emitter-base voltage  
V
IE = 10 ìA, IC = 0  
VCE = 2 V, IC = 100 mA  
V
Forward current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
200  
800  
0.2  
VCE(sat) IC = 500 mA, IB = 10 mA  
0.11  
100  
23  
V
fT  
VCB = 6 V, IE = -50 mA, f = 200 MHz  
VCB = 6 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
Marking  
Marking  
1O  
1
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