2SD2359 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型型号: | 2SD2359 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | Silicon NPN Epitaxial Planar Type |
文件: | 总1页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2359
Features
Low collector-emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
20
Collector-emitter voltage
Emitter-base voltage
Collector current
20
V
5
V
1.2
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
1
A
PC
1
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
1
Unit
ìA
V
Collector-base cutoff current
Collector-base voltage
VCB = 14 V, IE = 0
IC = 10 ìA, IE = 0
IC = 1 mA, IB = 0
VCBO
VCEO
VEBO
hFE
20
20
5
Collector-emitter voltage
Emitter-base voltage
V
IE = 10 ìA, IC = 0
VCE = 2 V, IC = 100 mA
V
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
200
800
0.2
VCE(sat) IC = 500 mA, IB = 10 mA
0.11
100
23
V
fT
VCB = 6 V, IE = -50 mA, f = 200 MHz
VCB = 6 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
Marking
Marking
1O
1
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