2SC2734-R25-HF [KEXIN]
NPN Transistors;
| 型号： | 2SC2734-R25-HF |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1067K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC2734-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=11V
1
2
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
20
11
Collector - Emitter Voltage
Emitter - Base Voltage
3
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
50
mA
P
C
150
mW
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， RBE =∞
= 100μA， I = 0
CB= 20 V , I = 0
EB= 3V , I =0
Min
20
11
3
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
0.5
0.1
0.7
1.2
200
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=10 mA, I
B
=5mA
V
C=10 mA, I
B=5mA
hFE
V
CE= 10V, I
C= 5mA
20
V
CC = 6 V, I
C
= 2 mA, f=900 MHz,
Conversion gain
Noise figure
CG
NF
15
f
OSC = 930 MHz (0dBm), fout = 30 MHz
dB
V
CC = 6 V, I
C = 2 mA, f=900 MHz,
9
f
OSC = 930 MHz (0dBm), fout = 30 MHz
Oscillating output voltage
Collector output capacitance
Transition frequency
V
OSC
V
V
V
CC = 6 V, I
C
= 5 mA,f = 930 MHz
140
mV
pF
C
ob
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
1.5
f
T
C
= 10mA
1.4
3.5
GHz
■ Classification of hfe
Type
Range
Marking
2SC2734-GC-HF
20-200
2SC2734-R25-HF
100-200
GC
F
R25.
F
1
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SMD Type
Transistors
NPN Transistors
2SC2734-HF
■ Typical Characterisitics
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
160
120
80
150
VCE = 10 V
100
50
40
0
1
2
5
10
20
50
50
100
150
0
。
Collector Current IC (mA)
Ambient Temperature Ta ( C)
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
5
4
3
2
1
2.0
1.6
1.2
VCE = 10 V
f = 1 MHz
IE = 0
0.8
0.4
0
0
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Conversion Gain vs. Collector Current
2.0
1.6
1.2
20
16
12
8
VCC = 6 V
f = 900 MHz
f = 1 MHz
Emitter Common
f
f
osc = 930 MHz
(0 dBm)
out = 30 MHz
0.8
0.4
4
0
1
2
5
10
20
50
2
4
6
8
10
0
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SC2734-HF
■ Typical Characterisitics
Oscillating Output Voltage vs.
Collector Current
Noise Figure vs. Collector Current
200
160
120
80
20
16
12
8
VCC = 6 V
VCC = 6 V
f = 930 MHz
f = 900 MHz
f
f
osc = 930 MHz
(0 dBm)
out = 30 MHz
4
40
1
2
3
4
5
0
0
2
4
6
8
10
Collector Current IC (mA)
Collector Current IC (mA)
Oscillating Output Voltage vs.
Supply Voltage
2nd I.M. Distortion vs. Collector Current
50
40
30
20
10
200
160
120
80
VCC = 10 V
f1 = 600 MHz
f2 = 650 MHz
IC = 5 mA
f = 930 MHz
40
f
V
2nd IM = 1,250 MHz
out = 103 dBµ
0
4
8
12
16
20
0
2
4
6
8
10
Collector Current IC (mA)
Supply Voltage VCC (V)
3rd I.M. Distortion vs. Collector Current
f = 700 MHz
70
60
50
40
30
20
Power Gain vs. Frequency
12
8
550 MHz
VCC = 10 V
4
f1 = 600 MHz
f2 = 650 MHz
f3rd IM = 550 MHz
700 MHz
VCC = 10 V
C = 10 mA
Pin = –30 dBm
0
I
V
out = 103 dBµ
–4
400
500
600
700
800
900
1,000
0
4
8
12
16
20
Frequency fT (MHz)
Collector Current IC (mA)
3
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