2SC2734GTLE-E [RENESAS]
Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SC-59A, MPAK-3;
| 型号： | 2SC2734GTLE-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SC-59A, MPAK-3 晶体 小信号双极晶体管 射频小信号双极晶体管 |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2734
Silicon NPN Epitaxial
REJ03G0705-0200
(Previous ADE-208-1074)
Rev.2.00
Aug.10.2005
Application
•
•
UHF frequency converter
Local oscillator, wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Emitter
2. Base
3
3. Collector
1
2
Note: Marking is “GC”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
Ratings
Unit
V
VCBO
VCEO
VEBO
IC
20
11
V
3
50
V
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
–55 to +150
Rev.2.00 Aug 10, 2005 page 1 of 7
2SC2734
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
20
11
3
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
—
—
V
—
—
0.5
0.7
200
—
µA
V
Collector to emitter saturation voltage
DC current transfer ratio
VCE(sat)
hFE
—
—
IC = 10 mA, IB = 5 mA
VCE = 10 V, IC = 5 mA
20
1.4
—
90
3.5
0.9
15
Gain bandwidth product
fT
GHz VCE = 10 V, IC = 10 mA
Collector output capacitance
Conversion gain
Cob
1.5
—
pF
dB
VCB = 10 V, IE = 0, f = 1 MHz
CG
—
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
f
OSC = 930 MHz (0dBm),
fout = 30 MHz
Noise figure
NF
—
—
9
—
—
dB
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
f
OSC = 930 MHz (0dBm),
fout = 30 MHz
Oscillating output voltage
VOSC
140
mV VCC = 6 V, IC = 5 mA,
f = 930 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
2SC2734
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
Maximum Collector Dissipation Curve
200
160
120
80
150
100
50
VCE = 10 V
40
0
50
100
150
1
2
5
10
20
50
0
Ambient Temperature Ta (°C)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
5
4
3
2
1
2.0
1.6
1.2
VCE = 10 V
f = 1 MHz
IE = 0
0.8
0.4
0
0
1
2
5
10
20
50
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Conversion Gain vs. Collector Current
20
VCC = 6 V
2.0
1.6
1.2
f = 1 MHz
Emitter Common
f = 900 MHz
fosc = 930 MHz
(0 dBm)
16
12
8
fout = 30 MHz
0.8
0.4
4
0
1
2
5
10
20
50
2
4
6
8
10
0
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 7
2SC2734
Oscillating Output Voltage vs.
Collector Current
Noise Figure vs. Collector Current
200
160
120
80
20
16
12
8
VCC = 6 V
f = 900 MHz
VCC = 6 V
f = 930 MHz
fosc = 930 MHz
(0 dBm)
40
4
fout = 30 MHz
0
2
4
6
8
10
1
2
3
4
5
0
Collector Current IC (mA)
Collector Current IC (mA)
Oscillating Output Voltage vs.
Supply Voltage
2nd I.M. Distortion vs. Collector Current
50
200
160
120
80
40
30
20
10
VCC = 10 V
f1 = 600 MHz
f2 = 650 MHz
f2nd IM = 1,250 MHz
Vout = 103 dBµ
IC = 5 mA
f = 930 MHz
40
0
2
4
6
8
10
0
4
8
12
16
20
Supply Voltage VCC (V)
Collector Current IC (mA)
Power Gain vs. Frequency
3rd I.M. Distortion vs. Collector Current
70
f = 700 MHz
12
8
60
50
40
30
20
550 MHz
4
VCC = 10 V
IC = 10 mA
Pin = –30 dBm
0
VCC = 10 V
f1 = 600 MHz
f2 = 650 MHz
f3rd IM = 550 MHz
700 MHz
–4
400
500
600
700
800
900
1,000
V
out = 103 dBµ
12 16
Collector Current IC (mA)
0
4
8
20
Frequency fT (MHz)
Rev.2.00 Aug 10, 2005 page 4 of 7
2SC2734
Conversion Gain, Noise Figure Test Curcuit
1 k
VBB
C3
C2
VCC
200 µ
fosc = 930 MHz
(0 dBm)
80 p
L5
fout = 30 MHz
RL = 50 Ω
L6
L4
L3
L1
*
D.U.T.
8 p
12 p
200 p
L2
0.047 µ
100
···· Disk Capacitor
Unit R: Ω
*
C: F
L : H
L1 : φ1 mm Enameled Copper wire
L2 : φ1 mm Enameled Copper wire
L3 : φ1 mm Enameled Copper wire
L4 : φ1 mm Enameled Copper wire
90
120
130
90
20
90
90
130
90
Unit : mm
L5 : Bobbin φ5 mm inside dia, φ0.2 mm 20 Turns Enameled Copper wire
L6 : φ0.5 mm Enameled Copper wire 1 Turn inside dia φ6 mm
C1 : 20 pF max. Air Trimmer Condenser
C
2, C3 : 1000 pF Air Core Capacitor
Rev.2.00 Aug 10, 2005 page 5 of 7
2SC2734
VOSC Test Circuit
1000 p
L3
VCC
470
Ferrite Bead
L1
L2
120 k
1,000 p
VT
D.U.T.
6.8 k
9 p
1.2 p
2,200 p
1SV70
330
V
OSC Output
Unit C: F
R: Ω
VBB
26
L1 : φ1 mm Enameled Copper wire
10
L2 : φ0.8 mm Enameled Copper wire
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω Resistor
Circuit Example-UHF Wide Bandwidth Amplifier (f = 500 MHz to 950 MHz)
92
2 p
Output
RL = 50 Ω
2 p
3 p
D.U.T.
Input
3 p 1.5 p
Rg = 50 Ω
L3
1.2 p
L1
L2
L5
L6
1,000 p
1,000 p
5.6 k
1,000 p
Unit R: Ω
C: F
VBB
VCC
L1 : φ0.5 mm Copper wire 5 Turns inside dia φ3 mm
L2 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm
L3 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm
L4 : φ0.5 mm Copper wire 1.5 Turns inside dia φ2 mm
L5 : φ0.5 mm Copper wire 4 Turns inside dia φ2 mm
L6 : φ0.5 mm Copper wire 3 Turns inside dia φ2 mm
Rev.2.00 Aug 10, 2005 page 6 of 7
2SC2734
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.011g
MPAK(T) / MPAK(T)V,
MPAK / MPAKV
SC-59A
PLSP0003ZB-A
D
A
Q
c
e
E
HE
L
L
P
L
1
Dimension in Millimeters
Reference
Symbol
A
A
A3
Min
1.0
0
Nom
Max
1.3
0.1
1.2
b
A
x
S
A
M
e
A1
A2
A3
1.0
1.1
0.25
0.42
0.4
b
0.35
0.1
0.5
A
2
1
A
b
1
c
0.13
0.11
0.15
c1
D
E
e
2.7
3.1
e1
1.35
1.5
0.95
2.8
1.65
A
S
H
E
2.2
3.0
b
L
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.55
L
1
b
1
c1
I1
L
P
x
c
b
e
2
1
1.95
0.3
b
2
I1
1.05
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
2SC2734GTL-E
3000
Rev.2.00 Aug 10, 2005 page 7 of 7
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