2SC2735 [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SC2735 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总10页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2735
Silicon NPN Epitaxial
Application
UHF/VHF Local oscillator, frequency converter
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2735
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
3
V
50
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
20
3
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
—
—
—
—
0.5
1.0
µA
VCB = 10 V, IC = 0
Collector to emitter saturation VCE(sat)
voltage
V
IC = 20 mA, IB = 4 mA
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Oscillating output voltage
hFE
40
—
—
—
1.5
—
—
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 10 mA
VCC = 12 V, IC = 7 mA,
Cob
fT
0.85
1200
210
pF
600
—
MHz
mV
VOSC1
f
OSC = 300 MHz
VCC = 12 V, IC = 7 mA,
OSC = 930 MHz
VOSC2
CG
—
—
130
21
—
—
mV
dB
f
Conversion gain
Noise figure
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f
OSC = 230 MHz (0dBm)
NF
—
6.5
—
dB
VCC = 12 V, IC = 2 mA,
f = 200 MHz,
f
OSC = 230 MHz (0dBm)
Note: Marking is “JC”.
2
2SC2735
DC Current Transfer Ratio
vs. Collector Current
Maximum Collector Dissipation Curve
200
160
120
80
150
100
50
40
VCE = 10 V
0
1
2
5
10
20
50
0
50
100
150
Collector Current IC (mA)
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
Collector Output Capacitance
vs. Collector to Base Voltage
2.0
1.6
1.2
0.8
0.4
0
2.0
1.6
1.2
0.8
0.4
0
IE = 0
f = 1 MHz
VCE = 10 V
1
2
5
10
20
50
1
2
5
10
20
50
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
3
2SC2735
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Base Time Constant
vs. Collector Current
2.0
1.6
1.2
0.8
0.4
0
20
16
12
8
Emitter Common
C = 0 V
f = 1 MHz
VCB = 10 V
f = 31.8 MHz
I
4
1
2
5
10
20
50
0
4
8
12
16
20
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
Oscillating Output Voltage
vs. Collector Current
Oscillating Output Voltage
vs. Supply Voltage
500
400
300
200
100
250
200
150
100
50
VCC = 12 V
fosc = 300 MHz
IC = 7 mA
f
osc = 300 MHz
0
2
4
6
8
10
0
4
8
12
16
20
Collector Current IC (mA)
Supply Voltage VCC (V)
4
2SC2735
Oscillating Output Voltage
vs. Collector Current
Oscillating Output Voltage
vs. Supply Voltage
200
160
120
80
200
160
120
80
40
40
VCC = 12 V
IC = 7 mA
osc = 930 MHz
f
osc = 930 MHz
f
0
2
4
6
8
10
0
4
8
12
16
20
Collector Current IC (mA)
Supply Voltage VCC (V)
Conversion Gain vs. Collector Current
Noise Figure vs. Collector Current
25
20
15
10
5
20
16
12
8
VCC = 12 V
f = 200 MHz
f
osc = 230 MHz
(0 dBm)
VCC = 12 V
f = 200 MHz
4
f
osc = 230 MHz
(0 dBm)
0
2
4
6
8
10
0
1
2
3
4
5
Collector Current IC (mA)
Collector Current IC (mA)
5
2SC2735
VOSC2 UHF Oscillating Output Voltage Test Circuit
L3
VCC
1,000 p
470
Ferrite Bead
L1
120 k
VT
1,000 p
9 p
1.2 p
D.U.T.
L2
ISV70
2,200 p
6.8 k
1,000 p
330
Vosc Output
VBB
Unit C : F
R : Ω
10
Dimensions of Cavity
15
26
L2
L1
(Dimensions in mm)
(Dimensions in mm)
L1 : Polyurethane Coated Copper Wire φ1.0 mm
L2 : Polyurethane Coated Copper Wire φ0.8 mm
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Ω (1/4W)Resistor.
Test Frequency : fosc = 930 MHz
Test Equipment : YHP 4271A Vector Voltmeter
6
2SC2735
VOSC1 VHF Oscillating Output Voltage Test Circuit
VBB
1,000 p
2.2 k
200 µ
V
osc Output
VCC
1.5 p
D.U.T.
5.6 p
12 p
7 p
4,700 p
1.1 M
20,000 p
4,700 p
L1
200
1SV70
4,700 p
fosc Monitor
VT
Unit C : F
R : Ω
L : H
L1 : Inside dia φ3 mm, φ3 mm Enameled Copper Wire 12 Turns
Test Frequency : fosc = 300 MHz
7
2SC2735
VHF Conversion Gain : Noise Figure Test Circuit
2,200 p
VCC
fosc = 230 MHz
(0 dBm)
1.5 p
560
L4
foat = 30 MHz
27 p
Ferrite Bead
D.U.T.
RL = 50 Ω
f = 200 MHz
L2
56 p
330
L1
L3
2,200 p
4.2 p
18 p
80 p
2,200 p
Unit C : F
R : Ω
VBB
L1 : Inside dia φ5 mm, φ0.5 mm Enameled Copper Wire 4 Turns
L2 : Inside dia φ4 mm, φ0.5 mm Enameled Copper Wire 4 Turns
L3 : Inside dia φ3 mm, φ0.2 mm Enameled Copper Wire 6 Turns
L4 : Outside dia φ5 mm Bobbin, φ0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead.
8
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
3 – 0.4
0 – 0.1
0.95
0.95
1.9 ± 0.2
2.95 ± 0.2
Hitachi Code
JEDEC
MPAK
—
EIAJ
Conforms
Weight (reference value) 0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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