2SC2734GCTR [HITACHI]

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2SC2734GCTR
型号: 2SC2734GCTR
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
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2SC2734  
Silicon NPN Epitaxial  
Application  
UHF frequency converter  
Local oscillator, wide band amplifier  
Outline  
MPAK  
3
1
1. Emitter  
2. Base  
2
3. Collector  
2SC2734  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
20  
11  
V
3
V
50  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to base breakdown  
voltage  
V(BR)CBO  
20  
11  
3
V
IC = 10 µA, IE = 0  
Collector to emitter breakdown V(BR)CEO  
voltage  
V
V
IC = 1 mA, RBE = ∞  
IE = 10 µA, IC = 0  
Emitter to base breakdown  
voltage  
V(BR)EBO  
Collector cutoff current  
ICBO  
0.5  
0.7  
µA  
VCB = 10 V, IE = 0  
Collector to emitter saturation VCE(sat)  
voltage  
V
IC = 10 mA, IB = 5 mA  
DC current transfer ratio  
Gain bandwidth product  
Collector output capacitance  
Conversion gain  
hFE  
fT  
20  
1.4  
90  
200  
VCE = 10 V, IC = 5 mA  
3.5  
0.9  
15  
GHz  
pF  
VCE = 10 V, IC = 10 mA  
VCB = 10 V, IE = 0, f = 1 MHz  
Cob  
CG  
1.5  
dB  
VCC = 6 V, IC = 2 mA,  
f = 900 MHz,  
f
f
OSC = 930 MHz (0dBm),  
out = 30 MHz  
Noise figure  
NF  
9
dB  
VCC = 6 V, IC = 2 mA,  
f = 900 MHz,  
f
f
OSC = 930 MHz (0dBm),  
out = 30 MHz  
Oscillating output voltage  
Note: Marking is “GC”.  
VOSC  
140  
mV  
VCC = 6 V, IC = 5 mA,  
f = 930 MHz  
2
2SC2734  
DC Current Transfer Ratio vs.  
Collector Current  
Maximum Collector Dissipation Curve  
200  
160  
120  
80  
150  
100  
50  
VCE = 10 V  
40  
0
1
2
5
10  
20  
50  
50  
100  
150  
0
Collector Current IC (mA)  
Ambient Temperature Ta (°C)  
Gain Bandwidth Product vs.  
Collector Current  
Collector Output Capacitance vs.  
Collector to Base Voltage  
5
4
3
2
1
2.0  
1.6  
1.2  
VCE = 10 V  
f = 1 MHz  
I
E = 0  
0.8  
0.4  
0
1
0
2
5
10  
20  
50  
1
2
5
10  
20  
50  
Collector Current IC (mA)  
Collector to Base Voltage VCB (V)  
3
2SC2734  
Reverse Transfer Capacitance vs.  
Collector to Base Voltage  
Conversion Gain vs. Collector Current  
2.0  
1.6  
1.2  
20  
16  
12  
8
VCC = 6 V  
f = 900 MHz  
f = 1 MHz  
Emitter Common  
f
f
osc = 930 MHz  
(0 dBm)  
out = 30 MHz  
0.8  
0.4  
4
0
1
2
5
10  
20  
50  
2
4
6
8
10  
0
Collector to Base Voltage VCB (V)  
Collector Current IC (mA)  
Oscillating Output Voltage vs.  
Collector Current  
Noise Figure vs. Collector Current  
200  
160  
120  
80  
20  
16  
12  
8
VCC = 6 V  
f = 900 MHz  
VCC = 6 V  
f = 930 MHz  
f
f
osc = 930 MHz  
(0 dBm)  
out = 30 MHz  
4
40  
1
2
3
4
5
0
0
2
4
6
8
10  
Collector Current IC (mA)  
Collector Current IC (mA)  
4
2SC2734  
Oscillating Output Voltage vs.  
Supply Voltage  
2nd I.M. Distortion vs. Collector Current  
50  
40  
30  
20  
10  
200  
160  
120  
80  
VCC = 10 V  
f1 = 600 MHz  
f2 = 650 MHz  
IC = 5 mA  
f = 930 MHz  
40  
f
V
2nd IM = 1,250 MHz  
out = 103 dBµ  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Collector Current IC (mA)  
Supply Voltage VCC (V)  
3rd I.M. Distortion vs. Collector Current  
f = 700 MHz  
70  
60  
50  
40  
30  
20  
Power Gain vs. Frequency  
12  
8
550 MHz  
VCC = 10 V  
4
f1 = 600 MHz  
f2 = 650 MHz  
f3rd IM = 550 MHz  
700 MHz  
VCC = 10 V  
C = 10 mA  
Pin = –30 dBm  
0
I
V
out = 103 dBµ  
–4  
400  
500  
600  
700  
800  
900  
1,000  
0
4
8
12  
16  
20  
Frequency fT (MHz)  
Collector Current IC (mA)  
5
2SC2734  
Conversion Gain, Noise Figure Test Curcuit  
1 k  
VBB  
C3  
C2  
VCC  
200 µ  
fosc = 930 MHz  
(0 dBm)  
80 p  
L5  
f
out = 30 MHz  
L6  
L4  
RL = 50 Ω  
L3  
L1  
*
D.U.T.  
8 p  
12 p  
200 p  
L2  
0.047 µ  
100  
···· Disk Capacitor  
Unit R: Ω  
C: F  
*
L : H  
L1 : φ1 mm Enameled Copper wire  
L2 : φ1 mm Enameled Copper wire  
L3 : φ1 mm Enameled Copper wire  
L4 : φ1 mm Enameled Copper wire  
90°  
120°  
130°  
90°  
20  
90°  
130°  
90°  
90°  
Unit : mm  
L5 : Bobbin φ5 mm inside dia, φ0.2 mm 20 Turns Enameled Copper wire  
L6 : φ0.5 mm Enameled Copper wire 1 Turn inside dia φ6 mm  
C1 : 20 pF max. Air Trimmer Condenser  
C2, C3 : 1000 pF Air Core Capacitor  
6
2SC2734  
VOSC Test Circuit  
1000 p  
L3  
VCC  
470  
Ferrite Bead  
L1  
L2  
120 k  
1,000 p  
VT  
D.U.T.  
6.8 k  
9 p  
1.2 p  
2,200 p  
1SV70  
330  
V
OSC Output  
Unit C: F  
R: Ω  
VBB  
26  
L1 : φ1 mm Enameled Copper wire  
10  
L2 : φ0.8 mm Enameled Copper wire  
L3 : φ0.3 mm Enameled Copper wire, 10 Turns with 470 Resistor  
7
2SC2734  
Circuit Example-UHF Wide Bandwidth Amplifier (f = 500 MHz to 950 MHz)  
92  
2 p  
Output  
RL = 50 Ω  
2 p  
3 p  
D.U.T.  
Input  
3 p 1.5 p  
Rg = 50 Ω  
L3  
1.2 p  
L1  
L2  
L5  
L6  
1,000 p  
1,000 p  
5.6 k  
1,000 p  
Unit R: Ω  
C: F  
VBB  
VCC  
L1 : φ0.5 mm Copper wire 5 Turns inside dia φ3 mm  
L2 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm  
L3 : φ0.5 mm Copper wire 2 Turns inside dia φ2 mm  
L4 : φ0.5 mm Copper wire 1.5 Turns inside dia φ2 mm  
L5 : φ0.5 mm Copper wire 4 Turns inside dia φ2 mm  
L6 : φ0.5 mm Copper wire 3 Turns inside dia φ2 mm  
8
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3 – 0.4  
0 – 0.1  
0.95  
0.95  
1.9 ± 0.2  
2.95 ± 0.2  
Hitachi Code  
JEDEC  
MPAK  
EIAJ  
Conforms  
Weight (reference value) 0.011 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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