KTC9018S [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTC9018S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC9018S
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
Small Reverse Transfer Capacitance
: Cre=0.65pF(Typ.).
_
A
B
C
D
E
2.93+0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
High Transition Frequency : fT=800MHz(Typ.).
1
G
H
J
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
M
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
30
1. EMITTER
2. BASE
V
4
V
3. COLLECTOR
20
mA
mA
mW
IE
Emitter Current
-20
SOT-23
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
350
150
-55 150
Tstg
* PC : Package Mounted On 99.5% Alumina (10
8
0.6
)
Marking
h
Rank
FE
Lot No.
Type Name
BG
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
0.1
0.1
198
1.0
-
UNIT
A
VCB=40V, IE=0
-
-
-
IEBO
VEB=4V, IC=0
-
A
hFE (Note)
Cre
VCE=5V, IC=1mA
54
-
-
VCE=6V, f=1MHz, IE=0
VCE=10V, IC=8mA, f=100MHz
VCE=6V, IE=-1mA, f=30MHz
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
-
pF
MHz
pS
fT
500
-
800
CC rbb'
NF
-
-
-
30
-
4.0
-
VCE=6V, IE=-1mA, f=100MHz
dB
Gpe
Power Gain
15
Note : hFE Classification F:54 80, G:72 108, H:97 146, I:130 198
2003. 3. 25
Revision No : 1
1/3
KTC9018S
hFE - IC
STATIC CHARACTERISTICS
300
100
500
450
400
350
300
250
COMMON EMITTER
=6V
20
16
12
8
V
CE
Ta=25 C
V
=6V
200
150
100
CE
50
30
I
=50µA
4
B
0
0
0.2
10
0.1
0.3 0.5
1
3
5
10
20
0.4
0.6
0.8
COLLECTOR CURRENT I (mA)
C
COMMON
EMITTER
Ta=25 C
V
CE
=6V
600
400
200
0
10
20
30
40
BASE CURRENT
( µA)
COLLECTOR-EMITTER
VOLTAGE V (V)
CE
I
B
yfe , θfe - IE
-100
100
y
fe
-50
-30
50
30
θ
fe
COMMON
EMITTER
V =6V
CE
-10
-5
10
5
f=100MHz
Ta=25 C
-0.2
-0.5
-1
-3
-5
-10
EMITTER CURRENT I (mA)
E
Cie , gie - IE
Coe , goe - IE
30
10
300
30
10
COMMON EMITTER
=6V
V
CE
f=100MHz
Ta=25 C
g
oe
C
g
ie
100
5
3
50
30
ie
5
3
COMMON
EMITTER
C
oe
V
CE
=6V
1
10
5
f=100MHz
Ta=25 C
1
0.5
-0.2
-0.5
-1
-3
-5
-10
-0.2
-0.3
-1
-3
-5
-10
EMITTER CURRENT I (mA)
E
EMITTER CURRENT I (mA)
E
2003. 3. 25
Revision No : 1
2/3
KTC9018S
yoe - f
yfe - f
2000
1600
1200
800
400
0
0
f=10.7MHz
27
50
COMMON EMITTER
f=200MHz
V
I
=6V
CE
=-1mA
E
-10
100
Ta=25 C
150
150
-20
-30
-40
100
COMMON EMITTER
200
V
I
=6V
CE
50
=-1mA
E
27
10.7
Ta=25 C
0
20
40
60
80
100
120
0
10
20
30
40
50
Ω
Ω
OUTPUT CONDUCTANCE g
(µ
)
FORWARD TRANSFER CONDUCTANCE g (m )
fe
oe
yre - f
yie - f
0
-200
-400
-600
-800
20
f=10.7MHz
27
COMMON EMITTER
V
I
=6V
f=200MHz
CE
16
12
8
50
=-1mA
E
Ta=25 C
150
100
150
100
COMMON EMITTER
V
=6V
CE
4
200
50
I
=-1mA
E
27
10.7
Ta=25 C
0
0
5
10
15
20
25
30
-200
-160
-120
-80
-40
0
Ω
)
Ω
)
INPUT CONDUCTANCE g (m
ie
REVERSE TRANSFER CONDUCTANCE g (µ
re
Pc - Ta
500
400
300
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
1
2
1
200
100
2
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25
Revision No : 1
3/3
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