KTC9018_10 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTC9018_10 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC9018
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
B
C
FEATURES
· Small Reverse Transfer Capacitance
: Cre=0.65pF(Typ.).
DIM MILLIMETERS
N
· Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
· High Transition Frequency : fT=800MHz(Typ.).
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
F
1.27
G
H
J
0.85
0.45
_
14.00 +0.50
H
MAXIMUM RATING (Ta=25℃)
K
L
0.55 MAX
2.30
F
F
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
40
UNIT
V
M
0.45 MAX
1.00
N
3
1
2
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
V
1. EMITTER
2. BASE
4
V
3. COLLECTOR
20
mA
mA
IE
Emitter Current
-20
TO-92
625
PC*
Collector Power Dissipation
mW
400
Tj
Junction Temperature
150
℃
℃
Tstg
Storage Temperature Range
-55∼ 150
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
0.1
0.1
198
1.0
-
UNIT
VCB=40V, IE=0
-
-
-
μA
μA
IEBO
VEB=4V, IC=0
-
hFE (Note)
Cre
VCE=5V, IC=1mA
VCE=6V, f=1MHz, IE=0
40
-
-
Reverse Transfer Capacitance
Transition Frequency
Collector-Base Time Constant
Noise Figure
-
pF
MHz
pS
fT
VCE=10V, IC=8mA, f=100MHz
VCE=6V, IE=-1mA, f=30MHz
500
-
800
CC· rbb'
NF
-
-
-
30
-
4.0
-
VCE=6V, IE=-1mA, f=100MHz
dB
Gpe
Power Gain
15
Note : hFE Classification E:40∼ 59, F:54∼ 80, G:72∼ 108, H:97∼ 146, I:130∼ 198
2010. 6. 25
Revision No : 1
1/1
相关型号：
©2020 ICPDF网 联系我们和版权申明