KTC945 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING); 外延平面NPN晶体管（通用，切换）
| 型号： | KTC945 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC945
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
ᴌExcellent hFE Linearity.
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
ᴌLow Noise : NF=1dB(Typ.). at f=1kHz
ᴌComplementary to KTA733.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
E
K
D
G
1.00
F
1.27
G
H
J
K
L
0.85
0.45
_
H
MAXIMUM RATING (Ta=25ᴱ)
14.00 +0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
F
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
RATING
UNIT
V
M
N
VCBO
VCEO
VEBO
IC
60
50
3
1
2
V
1. EMITTER
2. COLLECTOR
3. BASE
5
V
Collector Current
150
mA
mW
ᴱ
PC
Collector Power Dissipation
Junction Temperature
625
TO-92
Tj
150
Tstg
Storage Temperature Range
-55ᴕ150
ᴱ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
IC=100ỌA, IE=0
60
50
5
-
-
-
-
V
V
IC=1mA, IB=0
IE=100ỌA, IC=0
-
-
V
VCB=60V, IE=0
-
-
0.1
0.1
600
0.25
1.0
-
ỌA
ỌA
IEBO
VEB=5V, IC=0
Emitter Cut-off Current
-
-
hFE (Note)
VCE(sat)
VBE(sat)
fT
VCE=6V, IC=2mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
DC Current Gain
90
-
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
0.1
-
V
V
-
80
-
300
2.0
1.0
MHz
pF
Cob
Collector Output Capacitance
Noise Figure
3.5
10
NF
VCE=6V, IC=0.1mA Rg=10kή, f=1kHz
-
dB
Note : hFE Classification
R:90ᴕ180, Q:135ᴕ270, P:200ᴕ400, K:300ᴕ600
2001. 9. 14
Revision No : 2
1/2
KTC945
hFE - IC
I C - VCE
1k
240
200
160
120
80
COMMON
EMITTER
Ta=25 C
COMMON
EMITTER
5.0
3.0
6.0
500
300
2.0
V
=6V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
1.0
0.5
100
50
30
V
=1V
CE
I
=0.2mA
40
B
0
10
0
0
1
2
3
4
5
6
7
0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR CURRENT I (mA)
C
VCE(sat) - IC
f T - IE
3
3k
1k
COMMON
EMITTER
COMMON EMITTER
V
=10V
CE
Ta=25 C
I
/I =10
B
C
1
0.5
0.3
500
300
0.1
100
Ta=100 C
0.05
0.03
50
30
25 C
-25 C
0.01
10
-0.1
0.1
0.3
1
3
10
30
100
300
-0.3
-1
-3
-10
-30 -100 -300
COLLECTOR CURRENT I (mA)
C
EMITTER CURRENT I (mA)
E
Pc - Ta
IB - VBE
700
3k
COMMON
EMITTER
=6V
1k
600
500
400
300
200
100
V
CE
300
100
30
10
3
1
0.3
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
BASE-EMITTER VOLTAGE V
(V)
AMBIENT TEMPERATURE Ta ( C)
BE
2001. 9. 14
Revision No : 2
2/2
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