KTD1003 [KEXIN]
Load Switching Applications; 负载开关应用
| 型号： | KTD1003 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Load Switching Applications |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
HEXFET Power MOSFET
KRF7756
TSSOP-8
Unit: mm
Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (
1.2mm)
Available in Tape & Reel
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VDS
ID
Rating
Unit
V
Drain- Source Voltage
-12
-4.3
Continuous Drain Current, VGS @ -4.5V @ TA = 25
Continuous Drain Current, VGS @ -4.5V @ TA = 70
Pulsed Drain Current *1
A
ID
-3.5
IDM
PD
-17
1.0
W
W
Power Dissipation *2
Power Dissipation *2
Linear Derating Factor
Gate-to-Source Voltage
@TA= 25
@TA = 70
PD
0.64
8
m W/
V
VGS
8
-55 to + 150
125
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
TJ, TSTG
R
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, 10sec
1
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SMD Type
IC
KRF7756
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = -250
Min
-12
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
V(BR)DSS
A
-0.006
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -4.3A*1
V/
0.040
0.058
0.087
-0.9
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -2.5V, ID = -3.4A*1
VGS = -1.8V, ID = -2.2A*1
Gate Threshold Voltage
VGS(th)
gfs
-0.4
13
V
S
VDS = VGS, ID = -250
A
Forward Transconductance
VDS = -10V, ID = -4.3A*1
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
VGS = -8.0V
-1.0
-25
-100
100
18
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = 8.0V
Qg
Qgs
Qgd
td(on)
tr
ID = -4.3A
12
1.8
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -6.0V
2.7
VGS = -4.5V
2.9
4.4
VDD = -6V
12
ID = -1.0A
18
Turn-Off Delay Time
Fall Time
td(off)
tf
160
170
1400
310
240
RD = 6
VGS = -4.5V
Input Capacitance
Ciss
Coss
Crss
VGS = 0V
pF
A
Output Capacitance
VDS = -10V
Reverse Transfer Capacitance
f = 1.0MHz
IS
-1.0
-17
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD
trr
-1.2
53
V
TJ = 25 , IS = -1.0A, VGS = 0V*1
TJ = 25 , IF =-1.0A
35
20
ns
nC
Qrr
30
di/dt = -100A/ s*1
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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