KTC9014S [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR; 外延平面NPN晶体管
| 型号： | KTC9014S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR |
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L
B
L
FEATURES
DIM MILLIMETERS
Excellent hFE Linearity
_
A
B
C
D
E
2.93+0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015S.
2
3
1
G
H
J
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
60
UNIT
V
M
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1. EMITTER
2. BASE
50
V
5
V
3. COLLECTOR
150
mA
mA
mW
IE
Emitter Current
-150
350
SOT-23
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
150
Tstg
-55 150
* PC : Package Mounted On 99.5% Alumina (10
8
0.6
)
Marking
h
Rank
FE
Lot No.
Type Name
BD
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
50
UNIT
nA
VCB=50V, IE=0
-
-
-
-
IEBO
VEB=5V, IC=0
100
1000
0.25
-
nA
hFE (Note)
VCE(sat)
fT
VCE=5V, IC=1mA
100
-
-
IC=100mA, IB=10mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Collector-Emitter Saturation Voltage
Transition Frequency
0.1
-
V
MHz
pF
60
-
Cob
Collector Output Capacitance
Noise Figure
2.0
1.0
3.5
NF
VCE=6V, IC=0.1mA, Rg=10k , f=1kHz
-
10
dB
Note : hFE Classification B:100 300, C:200 600, D:400 1000
2002. 9. 3
Revision No : 0
1/1
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