KTA1718L [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING); 外延平面PNP晶体管(功率放大,功率开关)型号: | KTA1718L |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) |
文件: | 总3页 (文件大小:415K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1718D/L
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
A
C
I
J
FEATURES
DIM MILLIMETERS
_
6.60+0.2
_
6.10+0.2
A
B
C
D
E
F
Low Collector Saturation Voltage
: VCE(sat)=-0.5V(Max.) (IC=-1A)
_
5.0+0.2
_
1.10+0.2
_
2.70+0.2
_
2.30+0.1
High Speed Switching Time : tstg=1 S(Typ.)
Complementary to KTC2815D/L.
H
I
1.00 MAX
_
2.30+0.2
_
0.5+0.1
_
2.00+0.20
_
0.50+0.10
_
0.91+ 0.10
_
0.90+0.1
_
1.00+0.10
J
H
K
L
M
O
P
P
F
L
F
1
2
3
Q
0.95 MAX
1. BASE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
2. COLLECTOR
3. EMITTER
SYMBOL RATING
UNIT
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
-50
DPAK
V
-5
V
A
C
I
-2
A
J
1.0
Ta=25
Tc=25
Collector Power
Dissipation
PC
W
DIM MILLIMETERS
10
_
6.60 0.2
+
_
6.10 0.2
+
A
B
C
D
E
F
Tj
Junction Temperature
150
-55 150
_
+
5.0 0.2
_
1.10
9.50
2.30
0.76
+
0.2
0.6
0.1
0.1
P
H
G
_
+
_
+
_
+
Tstg
Storage Temperature Range
G
H
I
1.0 MAX
_
2.30+0.2
_
0.5 0.1
+
_
2.0 0.2
+
J
F
F
L
K
L
P
_
+
0.50 0.1
_
+
0.1
1.0
0.90 MAX
1
2
3
Q
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
VCB=-50V, IE=0
MIN. TYP. MAX. UNIT
-
-
-
-0.1
-0.1
-
A
A
IEBO
VEB=-5V, IC=0
Emitter Cut-off Current
-
V(BR)CEO
hFE(1) (Note)
IC=-10mA, IB=0
Collector-Emitter Breakdown Voltage
-50
70
40
-
-
-
V
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
240
-
DC Current Gain
hFE
2
-
VCE(sat)
VBE(sat)
fT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
-
-0.5
-1.2
-
V
V
-
-
-
100
30
MHz
pF
Cob
Collector Output Capacitance
-
-
OUTPUT
ton
tstg
tf
Turn On Time
-
-
-
0.1
1.0
0.1
-
-
-
20µs
I
B2
B1
INPUT
I
B2
Switching
Storage Time
Time
S
I
I
B1
-I =I =0.05A
B1 B2
V
=-30V
Fall Time
CC
<
DUTY CYCLE 1%
=
Note : hFE(1) Classification
O:70~140, Y:120~240.
2003. 3. 27
Revision No : 3
1/3
KTA1718D/L
STATIC CHARACTERISTICS
VCE - I C
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
COMMON EMITTER
Ta=25 C
-25
-20
-18
-2.0
-1.6
-1.2
-0.8
-0.4
-15
-12
-10
-8
-6
-4
20
-
-40
-80
-120
I
=-2mA
B
-200
0
0
-0.4
-0.8
-1.2
COMMON
EMITTER
Ta=25 C
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
COLLECTOR CURRENT I (A)
C
-30 -20 -10
0
-2
COLLECTOR EMITTER
VOLTAGE V (V)
-4
-6
-8
BASE CURRENT
(mA)
I
B
CE
VCE - I C
VCE - I C
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
COMMON EMITTER
Ta=100 C
COMMON EMITTER
Ta=-55 C
0
-30
6
-40
-
-60
-80
-80
-40
-30
-120
-120
-200
-200
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (A)
C
C
hFE - IC
1k
COMMON EMITTER
=-2V
V
CE
500
300
Ta=100 C
Ta=25 C
100
Ta=-55 C
50
30
10
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I (A)
C
2003. 3. 27
Revision No : 3
2/3
KTA1718D/L
VCE(sat) - IC
VBE(sat) - IC
-1
-1
COMMON EMITTER
/I =20
COMMON EMITTER
/I =20
I
I
B
C
C
B
-0.5
-0.3
-0.5
-0.3
Ta=-55 C
-0.1
-0.1
-0.05
-0.03
-0.05
-0.03
Ta=25 C
Ta=-55 C
Ta=25 C
Ta=100
C
-0.01
-0.01
-0.001
-0.03
-0.1
-0.3
-1
-3
-0.001
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
C
IC - VBE
SAFE OPERATING AREA
-2.0
-1.5
-1.0
-0.5
0
-5
-3
I
MAX.(PULSED)
*
C
COMMON EMITTER
10mS
I
MAX.(CONTINUOUS)
C
V
CE
=-2V
*
*
*
-1
*
D
C OPERATION
Ta=2
-0.5
-0.3
5
C
a=25
C
Ta=100
C
T
Ta=-55
C
-0.1
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
*
-0.05
-0.03
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
-0.01
0
-0.4
-0.8
-1.2
-1.6
(V)
-2.0
-0.2
-0.5 -1
-3
-10
-30
-100
BASE-EMITTER VOLTAGE V
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
BE
Pc - Ta
12
10
8
6
4
2
Ta=25 C
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27
Revision No : 3
3/3
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