KTA1726 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER); 外延平面PNP晶体管（高功率放大器）
| 型号： | KTA1726 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER) |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1726
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
R
S
FEATURES
ᴌComplementary to KTC4512.
ᴌRecommended for 30Wᴕ35W Audio Frequency
Amplifier Output Stage.
P
D
DIM MILLIMETERS
A
B
C
10.30 MAX
15.30 MAX
0.80
Φ3.60+0.20
3.00
_
D
E
F
G
H
T
6.70 MAX
_
13.60+0.50
MAXIMUM RATING (Ta=25ᴱ)
L
C
5.60 MAX
C
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
RATING
UNIT
V
J
K
L
M
N
O
P
Q
R
S
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
VCBO
VCEO
VEBO
IC
-80
-80
M
M
K
Collector-Emitter Voltage
Emitter-Base Voltage
V
1
2
3
1.50 MAX
1.50
-6
V
J
_
1. BASE
9.50+0.20
Collector Current
-6
A
_
8.00+0.20
2. COLLECTOR (HEAT SINK)
3. EMITTER
T
2.90 MAX
IB
Base Current
-3
A
PC
50
W
ᴱ
ᴱ
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
Tj
150
-55ᴕ150
TO-220AB
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
-10
-10
-
UNIT
VCB=-80V, IE=0
Collector Cut-off Current
IEBO
-
-
-
-
ỌA
ỌA
V
VEB=-6V, IC=0
Emitter Cut-off Current
V(BR)CEO
hFE(Note)
VCE(sat)
fT
IC=-25mA, IB=0
Collector-Emitter Breakdown Voltage
DC Current Gain
-80
55
-
-
VCE=-4V, IC=-2A
IC=-2A, IB=-0.2A
VCE=-12V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
-
160
-0.5
-
Collector-Emitter Saturation Voltage
Transition Frequency
-
V
MHz
pF
-
20
150
Cob
Collector Output Capacitance
-
-
Note : hFE Classification
R:55~110, O:80~160.
1999. 6. 24
Revision No : 0
1/3
KTA1726
IC - VCE
VCE(sat) - IB
-3
-2
-6
-4
-2
I
=-50mA
C
I
I
=-30mA
=-20mA
C
C
-1
0
I
=-6A
C
I
=-10mA
C
I
=-4A
C
I
=-2A
C
0
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
COLLECTOR-EMITTER VOLTAGE V
(V)
BASE CURRENT I (A)
B
CE
hFE - IC
IC - VBE
-6
1k
V
CE
=-4V
V
=-4V
CE
500
300
Tc=125 C
-4
-2
Tc=25 C
Tc=-30 C
100
50
30
0
10
-0.01
-1
-1.5
0
-0.03
-0.1
-0.3
-1
-3
-10
BASE-EMITTER VOLTAGE V (V)
BE
COLLECTOR CURRENT I (A)
C
hFE - IC
rth - t w
1k
10
V
CE
=-4V
CURVES SHOULD BE APPLIED IN
THERMA LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
500
300
5
3
Tc=125 C
Tc=25 C
Tc=-30 C
100
1
50
30
0.5
0.3
10
-0.01
0.1
1
30
100
300
1000
3
10
-0.03
-0.1
-0.3
-1
-3
-10
PULSE WIDTH t (sec)
COLLECTOR CURRENT I (A)
C
w
1999. 6. 24
Revision No : 0
2/3
KTA1726
fT - IE
SAFE OPERATING AREA
30
20
10
V
=-12V
CE
-30
-10
I
MAX.(PULSED)
C
100ms*
-5
-3
-1
-0.5
-0.3
*SINGLE NONREPETITIVE
PULSE Tc=25 C
0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
EMITTER CURRENT I (A)
E
-0.05
-3
-10
-30
-10-0
300
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
Pc - Ta
50
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO HEAT SINK
40
30
20
10
(1)
(2)
0
0
100
AMBIENT TEMPERATURE Ta ( C)
150
25
50
75
125
1999. 6. 24
Revision No : 0
3/3
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