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KTA1862D [KEC]

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES); 外延平面PNP晶体管（高压开关电源的开关用于电话）
KTA1862D
型号： KTA1862D
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)
外延平面PNP晶体管（高压开关电源的开关用于电话）

晶体 开关 晶体管 高压 局域网 电话
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中文：  中文翻译
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SEMICONDUCTOR  
KTA1862D/L  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE SWITCHING.  
POWER SUPPLY SWITCHING FOR TELEPHONES.  
A
C
I
J
FEATURES  
DIM MILLIMETERS  
_
6.60+0.2  
_
6.10+0.2  
_
5.0+0.2  
_
1.10+0.2  
_
2.70+0.2  
_
2.30+0.1  
A
B
C
D
E
F
High Breakdown Voltage, Typically : BVCEO=-400V.  
Low Collector Saturation Voltage.  
: VCE(sat)=-0.5V(Max.) at (IC=0.5A)  
High Switching Speed, Typically  
: tf= 0.4 S at IC=-1A  
H
I
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
_
2.00+0.20  
_
0.50+0.10  
_
0.91+ 0.10  
_
0.90+0.1  
_
1.00+0.10  
J
H
K
L
M
O
P
P
F
L
F
Wide Safe Operating Area (SOA)  
1
2
3
Q
0.95 MAX  
1. BASE  
2. COLLECTOR  
3. EMITTER  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
DPAK  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-400  
-400  
-7  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltag  
A
C
I
V
J
V
DIM MILLIMETERS  
DC  
Collector Current  
Pulse  
-2.0  
_
6.60 0.2  
+
_
6.10 0.2  
+
A
B
C
D
E
F
A
_
+
5.0 0.2  
ICP  
-4.0  
_
1.10  
9.50  
2.30  
0.76  
+
0.2  
0.6  
0.1  
0.1  
P
H
G
_
+
_
+
_
+
1.0  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
G
H
I
PC  
W
1.0 MAX  
_
2.30+0.2  
10  
_
0.5 0.1  
+
_
2.0 0.2  
+
J
F
F
L
K
L
P
Tj  
_
Junction Temperature  
150  
+
0.50 0.1  
_
+
0.1  
1.0  
0.90 MAX  
1
2
3
Q
Tstg  
Storage Temperature Range  
-55 150  
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut of Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VCB=-400V  
-
-
-
-1.0  
A
A
V
V
V
IEBO  
VEB=-5V  
Emitter Cut of Current  
-
-1.0  
BVCBO  
BVCEO  
BVEBO  
hFE(1) Note  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC=-50 A  
-400  
-
-
IC=-1mA  
-400  
-
-
IE=-50 A  
-7  
56  
6
-
-
-
180  
-
VCE=-5V, IC=-100mA  
VCE=-5V, IC=-500mA  
IC=-500mA, IB=-100mA  
IC=-500mA, IB=-100mA  
100  
-
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-0.3  
-
-0.5  
-1.2  
-
V
V
-
VCE=-10V, IE=-100mA, f=5MHz  
VCB=-10V, IE=0mA, f=1MHz  
-
18  
30  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
-
OUTPUT  
ton  
tstg  
tf  
Turn-on Time  
-
-
-
0.2  
-1.8  
0.4  
-
-
-
I
B2  
INPUT  
I
0
B2  
B1  
I
B1  
Turn-off Time  
Storage Time  
Switching Time  
S
I
20µsec  
-I =I =0.2A  
B2  
B1  
<
DUTY CYCLE 1%  
V
CC  
=-150V  
=
Note : hFE(1) Classification O:56~120, Y:82~180.  
2003. 3. 27  
Revision No : 4  
1/3  
KTA1862D/L  
hFE - IC  
IC - VCE  
1K  
-0.5  
-0.4  
-0.3  
-0.2  
-5.0mA  
-4.5mA  
-4.0mA  
Ta=25 C  
V
Ta=25 C  
=-5V  
CE  
300  
-3.5mA  
100  
30  
10  
3
-3.0mA  
-2.5mA  
-2.0mA  
-1.5mA  
-1.0mA  
=-0.5mA  
-8  
-0.1  
0
I
B
1
-0.001  
-0.01  
-0.1  
-1  
-3  
0
-2  
-4  
-6  
-10  
COLLECTOR CURRENT I (A)  
C
COLLECTOR-EMITTER VOLTAGE V  
(V)  
CE  
I C - VBE  
r th - t w  
-5  
Ta=25 C  
=-5V  
CURVES SHOULD BE APPLIED IN  
THERMAL LIMITED AREA.  
(SIGLE NONREPETITIVE PULSE)  
V
CE  
-1  
1
2
INFINITE HEAT SINK  
NO HEAT SINK  
-0.3  
100  
10  
2
1
-0.1  
-0.03  
-0.01  
1
-0.003  
-0.001  
0.1  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
(V)  
-1.4  
0.001  
0.01  
0.1  
1
10  
100  
1K  
BASE-EMITTER VOLTAGE V  
PULSE WIDTH t (sec)  
w
BE  
SAFE OPERATING AREA  
PC - Ta  
-10  
-3  
I
I
MAX(PULSE)  
12  
10  
8
C
C
*
MAX(DC)  
-1  
-0.3  
-0.1  
6
4
SINGLE NONREPETITIVE  
PULSE Tc=25 C  
*
2
Ta=25 C  
-0.03  
-0.01  
CURVES MUST BE DERATED  
LINEARLY WITH INCREASE  
IN TEMPERATURE  
0
0
25  
50  
75  
100  
125  
150  
-1  
-3  
-10  
-30  
-100  
-300  
-1K  
AMBIENT TEMPERATURE Ta ( C)  
COLLECTOR-EMITTER VOLTAGE V  
CE  
(V)  
2003. 3. 27  
Revision No : 4  
2/3  
KTA1862D/L  
VCE(sat) , VBE(sat) - I C  
f T - IE  
100  
-10  
-3  
Ta=25 C  
/I =5  
Ta=25 C  
=-10V  
I
C
B
V
CE  
50  
30  
-1  
-0.3  
V
BE(sat)  
10  
5
3
-0.1  
V
CE(sat)  
-0.03  
1
-0.01  
-0.001  
-0.01  
-0.1  
-1  
-3  
0.001  
0.03  
0.01  
0.03  
0.1  
0.3  
1
COLLECTOR CURRENT I (A)  
C
EMITTER CURRENT I (A)  
E
Cob - VCB , C ib - VEB  
Switching time  
1K  
10  
Ta=25 C  
f=1MHz  
=0A  
Ta=25 C  
I
=5I =-5I  
B1  
C
B2  
5
3
500  
300  
I
E
C
ib  
1
100  
C
ob  
50  
30  
0.5  
0.3  
t
t
t
stg  
f
on  
10  
0.1  
-0.1  
-0.3  
-1  
-3  
-10  
-30  
-100  
-0.1  
-0.3 -0.5  
-1  
-3 -5  
-10  
COLLECTOR TO BASE VOLTAGE V  
(V)  
COLLECTOR CURRENT I (A)  
C
CB  
(V)  
EMITTER TO BASE VOLTAGE V  
EB  
2003. 3. 27  
Revision No : 4  
3/3  

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