KTA1725 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER); 外延平面PNP晶体管（高功率放大器）
| 型号： | KTA1725 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER) |
| 文件： | 总3页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1725
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
A
C
FEATURES
DIM MILLIMETERS
U
A
10.30 MAX
15.30 MAX
2.70±0.30
0.85 MAX
Φ3.20±0.20
3.00±0.30
12.30 MAX
0.75 MAX
13.60±0.50
3.90 MAX
1.20
·Complementary to KTC4511.
B
C
E
S
D
E
F
G
H
R
T
L
L
J
K
L
M
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
1.30
M
N
O
P
V
2.54
D
D
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
4.50±0.20
6.80
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
-80
2.60±0.20
10°
Q
R
N
N
H
V
S
T
25。
T
T
5。
-6
V
U
V
0.5
2.60±0.15
3
2
1
Collector Current
-6
A
1. BASE
2. COLLECTOR
3. EMITTER
IB
Base Current
-3
A
PC
30
W
℃
℃
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Tj
150
-55∼150
TO-220IS
Tstg
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
IEBO
TEST CONDITION
VCB=-80V, IE=0
MIN.
TYP.
MAX.
-10
-10
-
UNIT
-
-
-
-
μA
μA
V
VEB=-6V, IC=0
Emitter Cut-off Current
V(BR)CEO
hFE(Note)
VCE(sat)
fT
IC=-25mA, IB=0
Collector-Emitter Breakdown Voltage
DC Current Gain
-80
55
-
-
VCE=-4V, IC=-2A
IC=-2A, IB=-0.2A
VCE=-12V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
-
160
-0.5
-
Collector-Emitter Saturation Voltage
Transition Frequency
-
V
MHz
pF
-
20
150
Cob
Collector Output Capacitance
-
-
Note : hFE Classification
R:55~110, O:80~160.
2002. 6. 5
Revision No : 0
1/3
KTA1725
IC - VCE
VCE(sat) - IB
-3
-2
-6
-4
-2
I
=-50mA
C
I
I
=-30mA
=-20mA
C
C
-1
0
I
=-6A
C
I
=-10mA
C
I
=-4A
C
I
=-2A
C
0
0
-1
-2
-3
-4
0
-0.5
-1.0
-1.5
COLLECTOR-EMITTER VOLTAGE V
(V)
BASE CURRENT I (A)
B
CE
hFE - IC
IC - VBE
-6
1k
V
CE
=-4V
V
=-4V
CE
500
300
Tc=125 C
-4
-2
Tc=25 C
Tc=-30 C
100
50
30
0
10
-1
-1.5
0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
BASE-EMITTER VOLTAGE V (V)
BE
COLLECTOR CURRENT I (A)
C
hFE - IC
Rth - t
1k
100
10
1k
V
CE
=-4V
1
2
NO HEAT SINK
INFINITE SINK
500
300
1
2
Tc=125 C
Tc=25 C
Tc=-30 C
100
50
30
1
0.1
10
0.001
0.01
0.1
1
10
100
1k
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR CURRENT I (A)
C
TIME t (S)
2002. 6. 5
Revision No : 0
2/3
KTA1725
fT - IE
SAFE OPERATING AREA
30
20
10
V
=-12V
CE
-30
-10
I
MAX.(PULSED)
C
100ms*
-5
-3
-1
-0.5
-0.3
*SINGLE NONREPETITIVE
PULSE Tc=25 C
0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
EMITTER CURRENT I (A)
E
-0.05
-3
-10
-30
-10-0
300
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
Pc - Ta
-40
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO HEAT SINK
-30
-25
-20
-15
-10
(1)
-5
0
(2)
100
AMBIENT TEMPERATURE Ta ( C)
175
0
25
50
75
125
150
2002. 6. 5
Revision No : 0
3/3
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