KTA1271A [KEC]

SEMICONDUCTOR TECHNICAL DATA; 半导体技术资料
KTA1271A
型号: KTA1271A
厂家: KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述:

SEMICONDUCTOR TECHNICAL DATA
半导体技术资料

半导体
文件: 总2页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
KTA1271A  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH CURRENT APPLICATION.  
FEATURES  
B
C
· High hFE : hFE=100320.  
· Complementary to KTC3203A.  
DIM MILLIMETERS  
N
A
B
C
D
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-35  
UNIT  
V
1.00  
E
F
1.27  
G
H
J
0.85  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
0.45  
_
14.00 +0.50  
H
-30  
V
K
L
M
0.55 MAX  
2.30  
F
F
-5  
V
0.45 MAX  
1.00  
N
Collector Current  
-800  
800  
mA  
mA  
mW  
3
1
2
1. EMITTER  
2. COLLECTOR  
3. BASE  
IE  
Emitter Current  
PC  
Collector Power Dissipation  
Junction Temperature  
400  
Tj  
150  
TO-92 (F)  
Tstg  
Storage Temperature Range  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-100  
-100  
-
UNIT  
nA  
VCB=-35V, IE=0  
-
-
-
VEB=-5V, IC=0  
Emitter Cut-off Current  
-
nA  
V(BR)CEO  
hFE(1) (Note)  
hFE(2)  
VCE(sat)  
VBE  
IC=-10mA, IB=0  
Collector-Emitter Breakdown Voltage  
-30  
100  
35  
-
-
-
V
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-700mA  
IC=-500mA, IB=-20mA  
VCE=-1V, IC=-10mA  
VCE=-5V, IC=-10mA  
VCB=-10V, IE=0, f=1MHz  
320  
-
DC Current Gain  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
-0.7  
-0.8  
-
V
V
-0.5  
-
-
fT  
Transition Frequency  
120  
19  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
-
Note : hFE(1) Classification  
0:100200, Y:160320  
2010. 1. 28  
Revision No : 1  
1/2  
KTA1271A  
IC - VCE  
hFE - I C  
-1k  
-800  
-600  
-400  
-200  
0
2k  
1k  
COMMON EMITTER  
Ta=25 C  
COMMON EMITTER  
=-1V  
V
CE  
-8  
-7  
-6  
-5  
500  
300  
Ta=100 C  
-4  
Ta=25 C  
Ta=-25 C  
100  
-3  
-2  
50  
30  
I
=-1mA  
B
0
10  
0
-1  
-2  
-3  
-4  
-5  
-6  
-1  
-3  
-10  
-30  
-100  
-300  
-1k  
COLLECTOR-EMITTER VOLTAGE V (V)  
CE  
COLLECTOR CURRENT I (mA)  
C
VCE(sat) - I C  
IC - VBE  
-3  
-1  
-1k  
COMMON EMITTER  
COMMON  
EMITTER  
=-1V  
-500  
-300  
I
/I =25  
B
C
V
CE  
-0.5  
-0.3  
-100  
-50  
-30  
-0.1  
-10  
Ta=100 C  
-0.05  
-0.03  
-5  
-3  
Ta=25 C  
Ta=-25 C  
-0.01  
-1  
-1  
-3  
-10  
-30  
-100  
-300  
-1k  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
(V)  
COLLECTOR CURRENT I (mA)  
C
BASE-EMITTER VOLTAGE V  
BE  
Pc - Ta  
700  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE Ta ( C)  
2010. 1. 28  
Revision No : 1  
2/2  

相关型号:

KTA1271O

Transistor
JCST

KTA1271Y

Transistor
JCST

KTA1271_05

TO-92 PACKAGE
KEC

KTA1272

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
KEC

KTA1273

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
KEC

KTA1273

TRANSISTOR (PNP)
HTSEMI

KTA1273

Collector Power Dissipation: PC=500mW
TYSEMI

KTA1273O

Transistor
JCST

KTA1273Y

Transistor
JCST

KTA1274

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KEC

KTA1274

TRANSISTOR (PNP)
WINNERJOIN

KTA1275

EPITAXIAL PLANAR PNP TRANSISTOR
KEC