KTA1271Y [JCST]
Transistor;
| 型号： | KTA1271Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KTA1271 TRANSISTOR (PNP)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
z
High DC Current Gain
Complementary to KTC3203
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbo
VCBO
VCEO
VEBO
IC
Parameter
Value
-35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Collector Current
-0.8
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
0.625
200
W
RθJA
Tj
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR) CEO
V(BR)EBO
ICBO
Test
conditions
Min
-35
-30
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -0.1mA ,IE=0
IC=-10mA,IB=0
V
IE=-0.1mA,IC=0
V
VCB=-35V,IE=0
-0.1
-0.2
-0.1
320
μA
μA
μA
Collector cut-off current
ICEO
VCE=-25V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA,IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V,IC=-10mA
VCB=-10V, IE=0, f=1MHz
100
35
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
-0.7
-0.8
V
V
Transition frequency
fT
120
19
MHz
pF
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
100-200
160-320
A,Dec,2010
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