KTA1275 [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管型号: | KTA1275 |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | EPITAXIAL PLANAR PNP TRANSISTOR |
文件: | 总3页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTA1275
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
COLOR TV VERT. DEFELECTION OUTPUT APPLICATION.
COLOR TV CLASS B SOUND OUTPUT APPLICATION.
B
D
FEATURES
ᴌHigh Voltage : VCEO=-160V.
ᴌLarge Continuous Collector Current Capability.
ᴌComplementary to KTC3228.
DIM MILLIMETERS
P
DEPTH:0.2
A
B
C
D
7.20 MAX
5.20 MAX
0.60 MAX
C
Q
S
2.50 MAX
E
F
1.15 MAX
1.27
K
G
H
J
K
L
M
1.70 MAX
0.55 MAX
14.00+0.50
F
F
_
MAXIMUM RATING (Ta=25ᴱ)
0.35 MIN
H
H
H
_
0.75+0.10
CHARACTERISTIC
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-160
-160
-6
UNIT
V
E
4
25
1.25
Φ1.50
0.10 MAX
M
M
N
O
P
Q
R
S
L
1
2
3
H
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
N
N
_
12.50+0.50
V
1. EMITTER
2. COLLECTOR
3. BASE
1.00
-1
A
IB
Base Current
-0.5
A
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1
W
ᴱ
ᴱ
TO-92L
Tj
150
Tstg
-55ᴕ150
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
-1.0
-1.0
-
UNIT
VCB=-150V, IE=0
-
-
-
-
ỌA
ỌA
V
IEBO
VEB=-6V, IC=0
Emitter Cut-off Current
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
IC=-10mA, IB=0
Collector-Emitter Breakdown Voltage
DC Current Gain
-160
60
-
-
VCE=-5V, IC=-200mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-5mA
VCE=-5V, IC=-200mA
VCB=-10V, IE=0, f=1MHz
-
320
-1.5
-0.75
-
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-
V
V
-0.45
15
-
-
fT
Transition Frequency
50
-
MHz
pF
Cob
Collector Output Capacitance
Note : hFE Classification R:60ᴕ120
35
0:100ᴕ200, Y:160ᴕ320
1998. 12. 19
Revision No : 2
1/3
KTA1275
IC - VCE
I C - VBE
-1.0
-0.8
-0.6
-0.4
-0.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
-15
-12
-10
COMMON
EMITTER
COMMON
EMITTER
Ta=25 C
V
CE
=-5V
-8
-6
-4.5
-3
-2
=-1mA
I
B
0
0
0
-4
-8
-12
-16
-20
-24
-28
0
-0.2 -0.4
-0.6
-0.8
-1.0
-1.2
(V)
-1.4
COLLECTOR-EMITTER VOLTAGE V (V)
CE
BASE-EMITTER VOLTAGE V
BE
hFE - IC
hFE - IC
300
100
COMMON EMITTER
Ta=25 C
300
100
Ta=100 C
25
0
50
30
50
30
COMMON EMITTER
V
V
=-10V
=-5V
CE
CE
10
-10
10
-10
-30
-30 -50
-100
-300 -500 -1k
-50
-100
-300
-1k
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
VCE(sat) - IC
VCE(sat) - I C
COMMON EMITTER
/I =10
-2
-2
-1
COMMON EMITTER
Ta=25 C
I
C
B
-1
-0.5
-0.3
-0.5
-0.3
-0.1
-0.1
Ta=100 C
0
I
/I =10
B
C
5
25
-0.05
-0.03
-0.05
-0.03
-5
-10
-30
-100
-300
-1k
-5
-10
-30
-100
-300
-1k
COLLECTOR CURRENT I (mA)
COLLECTOR CURRENT I (mA)
C
C
1998. 12. 19
Revision No : 2
2/3
KTA1275
f T - IC
Cob - VCB
500
300
100
COMMON EMITTER
f=1MHz
COMMON EMITTER
Ta=25 C
50
30
Ta=25 C
100
V
=-5V
CE
50
30
10
5
V
=-2V
CE
10
2
-2
-5 -10
-30
-100
-400
-1
-3 -5
-10
-30
-100
(V)
-200
COLLECTOR CURRENT I (mA)
C
COLLECTOR-BASE VOLTAGE V
CB
SAFE OPERATING AREA
-3
-1
I
MAX.(PULSED)
*
C
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.005
-0.003
SINGLE NONREPETITIVE
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
-0.001
-2
-5
-10
-30 -50 -100
-300
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
1998. 12. 19
Revision No : 2
3/3
相关型号:
KTA1277
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, DC-DC CONVERTER, LOW POWER SWITCHING REGULATOR)
KEC
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