KTA1273Y [JCST]
Transistor;
| 型号： | KTA1273Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTA1273 TRANSISTOR (PNP)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Complementary to KTC3205.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-30
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-2
A
PC
1
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-30
-30
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-1mA, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
V
V
VCB=-30V, IE=0
-0.1
-0.1
320
-2.0
-1.0
μA
μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE= -2V, IC=-500mA
IC=-1.5A, IB=-30mA
VCE= -2V, IC= -500mA
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
Transition frequency
V
CE= -2V, IC= -500mA
120
48
MHz
pF
fT
Collector output capacitance
VCB=-10V, IE=0, f=1MHZ
Cob
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
100-200
160-320
A,Jun,2011
相关型号：
KTA1277
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, DC-DC CONVERTER, LOW POWER SWITCHING REGULATOR)
KEC
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