BF861_2015 [JMNIC]
N-channel junction FETs;
| 型号： | BF861_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | N-channel junction FETs |
| 文件： | 总12页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF861A; BF861B; BF861C
N-channel junction FETs
1997 Sep 04
Product specification
Supersedes data of 1995 Apr 14
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
handbook, age
2
1
d
g
s
APPLICATIONS
3
Top view
MAM036
•
Preamplifiers for AM tuners in car radios.
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT23 package.
Fig.1 Simplified outline and symbol.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
source
CAUTION
1
2
3
s
d
g
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
drain
gate
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
25
UNIT
drain-source voltage (DC)
drain current
−
V
IDSS
VGS = 0; VDS = 8 V
BF861A
2
6
6.5
15
mA
mA
mA
mW
BF861B
BF861C
12
25
Ptot
yfs
total power dissipation
forward transfer admittance
BF861A
up to Tamb = 25 °C
−
250
VGS = 0; VDS = 8 V
12
16
20
−
20
25
30
10
2.7
mS
mS
mS
pF
BF861B
BF861C
Ciss
Crss
input capacitance
reverse transfer capacitance
f = 1 MHz
f = 1 MHz
−
pF
1997 Sep 04
2
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
25
UNIT
drain-source voltage (DC)
gate-source voltage
−
−
−
−
−
V
V
V
VGSO
VDGO
IG
open drain
25
drain-gate voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
open source
25
10
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C; note 1
250
+150
150
−65
operating junction temperature
−
°C
Note
1. Device mounted on an FR4 printed-circuit board.
MRC166
300
P
tot
(mW)
200
100
0
0
50
100
150
o
T
( C)
amb
Fig.2 Power derating curve.
1997 Sep 04
3
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
UNIT
Rth j-a
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C; VDS = 8 V; VGS = 0; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
VGSoff
gate-source breakdown voltage IG = −1 µA
−25
−
−
V
gate-source cut-off voltage
BF861A
ID = 1 µA
−0.2
−0.5
−0.8
−
−
−
−
−
−1
−1.5
−2
1
V
V
V
V
BF861B
BF861C
VGSS
IDSS
gate-source forward voltage
drain current
BF861A
VDS = 0; IG = 1 mA
2
−
−
−
−
6.5
15
25
−1
mA
BF861B
6
mA
mA
nA
BF861C
12
−
IGSS
yfs
gate cut-off current
forward transfer admittance
BF861A
VGS = −20 V; VDS = 0
12
16
20
−
−
−
20
25
30
mS
mS
mS
BF861B
BF861C
gos
common source output
conductance
BF861A
−
−
−
−
−
−
−
200
250
300
10
µS
BF861B
−
µS
BF861C
−
µS
Ciss
input capacitance
reverse transfer capacitance
equivalent input noise voltage
f = 1 MHz
−
pF
Crss
f = 1 MHz
2.1
1.5
2.7
−
pF
Vn/√B
VGS = 0; f = 1 MHz
nV/√Hz
1997 Sep 04
4
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD461
MBD462
30
300
handbook, halfpage
I
g
DSS
os
(mA)
(µS)
20
200
10
100
0
0
0
0
0.5
1
1.5
2
5
10
15
20
(mA)
25
V
(V)
I
GSoff
DSS
VDS = 8 V.
VGS = 0.
VDS = 8 V.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
Fig.4 Common-source output conductance as
a function of drain current; typical values.
MBD464
MBD463
25
30
handbook, halfpage
handbook, halfpage
BF861C
y
fs
(mS)
20
y
BF861B
fs
(mS)
BF861A
20
15
10
10
5
0
0
0
5
10
15
20
I
(mA)
0
5
10
15
20
(mA)
25
D
I
DSS
VDS = 8 V.
VGS = 0.
VDS = 8 V.
Fig.5 Forward transfer admittance as a
function of drain current; typical values.
Fig.6 Forward transfer admittance as a
function of drain current; typical values.
1997 Sep 04
5
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD465
MBD466
5
5
handbook, halfpage
handbook, halfpage
I
I
D
D
V
= 0 V
GS
(mA)
(mA)
4
4
3
2
3
2
100 mV
200 mV
300 mV
1
0
1
0
0
1
0.8
0.6
0.4
0.2
V
0
(V)
2
4
6
8
10
(V)
V
DS
GS
BF861A
BF861A
VDS = 8 V.
VDS = 8 V.
Fig.7 Typical input characteristics.
Fig.8 Typical output characteristics.
MBD467
MBD468
10
10
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
8
8
GS
100 mV
6
4
6
4
200 mV
300 mV
400 mV
500 mV
2
2
0
1
0
0
0.8
0.6
0.4
0.2
V
0
(V)
2
4
6
8
10
(V)
V
DS
GS
BF861B
BF861B
VDS = 8 V.
VDS = 8 V.
Fig.9 Typical input characteristics.
Fig.10 Typical output characteristics.
1997 Sep 04
6
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD469
MBD470
20
20
handbook, halfpage
handbook, halfpage
I
I
D
D
V
= 0 V
GS
(mA)
(mA)
16
16
200 mV
400 mV
600 mV
800 mV
1 V
12
8
12
8
4
0
4
0
0
2.5
2
1.5
1
0.5
0
2
4
6
8
10
(V)
V
V
(V)
DS
GS
BF861C
BF861C
VDS = 8 V.
VDS = 8 V.
Fig.11 Typical input characteristics.
Fig.12 Typical output characteristics.
MBD472
MBD471
2
10
10
handbook, halfpage
handbook, halfpage
C
,C
is rs
I
= 10 mA
D
(pF)
10
1 mA
I
G
8
(nA)
1
0.1 mA
6
4
1
10
C
C
is
2
10
I
GSS
3
10
rs
2
0
4
10
5
10
8
6
4
2
0
0
5
10
15
20
V
25
(V)
V
(V)
GS
DG
VDS = 8 V.
f = 1 MHz.
VDS = 8 V.
Fig.13 Input and reverse transfer capacitance
as functions of gate-source voltage;
typical values.
Fig.14 Gate current as a function of
drain-gate voltage; typical values.
1997 Sep 04
7
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD474
MBD473
2
8
10
,b
handbook, halfpage
V / B
n
g
is is
(nV/ Hz)
(mS)
6
b
g
is
is
10
4
2
0
1
1
10
2
3
10
10
10
f
(MHz)
2
1
2
3
10
10
1
10
10
10
f (kHz)
VDS = 8 V.
VGS = 0.
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
Fig.15 Equivalent input noise as a function of
frequency; typical values.
Fig.16 Common-source input
admittance; typical values.
MBD475
MBD476
2
2
10
10
handbook, halfpage
handbook, halfpage
g
,b
rs rs
(mS)
10
g
,b
fs fs
(mS)
g
fs
fs
b
g
rs
rs
10
1
1
b
10
10
2
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 8 V.
VGS = 0.
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
Tamb = 25 °C.
Fig.17 Common-source reverse admittance;
typical values.
Fig.18 Common-sourceforwardtransfer
admittance; typical values.
1997 Sep 04
8
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD477
2
10
g
,b
os os
(mS)
10
b
os
1
g
os
1
10
2
3
10
10
10
f
(MHz)
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
Fig.19 Common-sourceoutputadmittance;
typical values.
1997 Sep 04
9
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
3
1.1
max
0.48
0.38
0.1 M A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.20 SOT23.
1997 Sep 04
10
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 04
11
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117067/00/03/pp12
Date of release: 1997 Sep 04
Document order number: 9397 750 02667
相关型号：
BF862T/R
TRANSISTOR 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal
NXP
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