BF862/A2,215 [NXP]
BF862 - N-channel junction FET TO-236 3-Pin;
| 型号： | BF862/A2,215 |
| 厂家： | 
NXP |
| 描述： | BF862 - N-channel junction FET TO-236 3-Pin |
| 文件： | 总11页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BF862
N-channel junction FET
Product specification
2000 Jan 05
Supersedes data of 1999 Jun 29
NXP Semiconductors
Product specification
N-channel junction FET
BF862
FEATURES
PINNING SOT23
PIN
High transition frequency for excellent sensitivity in
AM car radios
DESCRIPTION
1
2
3
source
High transfer admittance.
drain
gate
APPLICATIONS
Pre-amplifiers in AM car radios.
handbook, age
2
1
DESCRIPTION
d
s
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
g
3
Top view
MAM036
Marking code: 2Ap.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS MIN.
TYP. MAX. UNIT
20
V
VGSoff
IDSS
Ptot
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
0.3
10
0.8
1.2
25
V
mA
mW
mS
C
Ts 90 C
300
yfs
Tj
35
45
junction temperature
150
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2000 Jan 05
2
NXP Semiconductors
Product specification
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
20
V
VDG
VGS
IDS
IG
drain-gate voltage
20
V
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
20
40
V
mA
mA
mW
C
C
10
Ptot
Tstg
Tj
Ts 90 C; note 1
300
+150
150
65
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
200
UNIT
thermal resistance from junction to soldering
point
note 1
K/W
Note
1. Soldering point of the gate lead.
MCD808
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
2000 Jan 05
3
NXP Semiconductors
Product specification
N-channel junction FET
BF862
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL
V(BR)GSS
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX.
UNIT
gate-source breakdown voltage IGS = 1 A; VDS = 0
V
VGS
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
VDS = 0; IG = 1 mA
VDS = 8 V; ID = 1 A
VGS = 15 V; VDS = 0
VGS = 0; VDS = 8 V
1
V
VGSoff
IGSS
IDSS
0.3
0.8
1.2
1
25
V
nA
mA
drain-source current
10
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
yfs
PARAMETER
CONDITIONS
Tj = 25 C
MIN.
TYP.
MAX.
UNIT
common source forward transfer
admittance
35
45
mS
gos
Ciss
Crss
en
common source output conductance
input capacitance
Tj = 25 C
f = 1 MHz
f = 1 MHz
f = 100 kHz
180
10
400
S
pF
reverse transfer capacitance
equivalent noise input voltage
transition frequency
1.9
0.8
715
pF
nV/Hz
MHz
fT
2000 Jan 05
4
NXP Semiconductors
Product specification
N-channel junction FET
BF862
MCD810
MCD809
40
300
handbook, halfpage
handbook, halfpage
I
DSS
g
os
(mA)
(μS)
30
200
20
10
0
100
0
0
0
−0.5
−1
−1.5
10
20
30
V
(V)
I
(mA)
DSS
GSoff
VDS = 8 V; Tj = 25 C.
VDS = 8 V; Tj = 25 C.
Fig.4 Common-source output conductance as a
function of drain saturation current;
typical values.
Fig.3 Drain saturation current as a function of
gate-source cut-off voltage; typical values.
MCD812
MCD811
60
60
handbook, halfpage
handbook, halfpage
y
fs
y
fs
(mS)
(mS)
50
40
40
30
20
20
0
0
10
20
30
0
10
20
30
I
(mA)
I
(mA)
D
DSS
VDS = 8 V; Tj = 25 C.
VDS = 8 V; Tj = 25 C.
Fig.5 Forward transfer admittance as a function
of drain saturation current; typical values.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
2000 Jan 05
5
NXP Semiconductors
Product specification
N-channel junction FET
BF862
MCD813
MCD814
30
20
handbook, halfpage
handbook, halfpage
V
= 0 V
I
GS
D
I
(mA)
16
D
(mA)
max
−0.1 V
20
12
−0.2 V
−0.3 V
typ
8
4
10
−0.4 V
−0.5 V
min
0
0
0
−1
−0.8
−0.6
−0.4
−0.2
0
4
8
12
V
(V)
DS
V
(V)
GS
VDS = 8 V; Tj = 25 C.
VDS = 8 V; Tj = 25 C.
Fig.7 Drain current as a function of gate-source
voltage; typical values.
Fig.8 Drain current as a function of drain-source
voltage; typical values.
MCD815
MCD816
4
−10
12
handbook, halfpage
handbook, halfpage
10 mA
I
= 20 mA
I
D
G
1 mA
C
(nA)
(pF)
0.1 mA
2
−10
8
−1
C
is
4
I
GSS
−2
−10
−10
C
rs
−4
0
−8
0
5
10
15
20
V
25
(V)
−6
−4
−2
0
V
(V)
GS
DG
VDS = 8 V; f = 1 MHz; Tj = 25 C.
VDS = 8 V; Tj = 25 C.
Fig.10 Input and reverse transfer capacitance as
functions of gate-source voltage; typical
values.
Fig.9 Gate current as a function of drain-gate
voltage; typical values.
2000 Jan 05
6
NXP Semiconductors
Product specification
N-channel junction FET
BF862
MCD817
MCD818
2
3
10
10
−10
handbook, halfpage
handbook, halfpage
y
is
(mS)
y
rs
y
ϕ
rs
rs
10
(mS)
(deg)
b
is
ϕ
rs
2
1
1
−10
−1
10
g
is
−1
−2
10
10
−10
3
10
−1
2
3
−1
2
1
10
10
10
10
1
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 8 V; VGS = 0; Tamb = 25 C.
ID = 15 mA; Tamb = 25 C.
Fig.11 Common-source input admittance as a
function of frequency; typical values.
Fig.12 Common-source reverse admittance as a
function of frequency; typical values.
MCD819
MCD820
2
2
2
10
10
−10
handbook, halfpage
handbook, halfpage
y
y
os
fs
(mS)
y
ϕ
fs
fs
(mS)
(deg)
10
ϕ
fs
b
os
10
−10
1
g
os
−1
1
10
−1
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
f (MHz)
f (MHz)
VDS = 8 V; VGS = 0; Tamb = 25 C.
VDS = 8 V; VGS = 0; Tamb = 25 C.
Fig.13 Common-source forward transfer
admittance as a function of frequency;
typical values.
Fig.14 Common-source output admittance as a
function of frequency; typical values.
2000 Jan 05
7
NXP Semiconductors
Product specification
N-channel junction FET
BF862
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2000 Jan 05
8
NXP Semiconductors
Product specification
N-channel junction FET
BF862
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
2000 Jan 05
9
NXP Semiconductors
Product specification
N-channel junction FET
BF862
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2000 Jan 05
10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/03/pp11
Date of release: 2000 Jan 05
相关型号：
BF862T/R
TRANSISTOR 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明