BF862T/R [NXP]
TRANSISTOR 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal;
| 型号： | BF862T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal 晶体 小信号场效应晶体管 光电二极管 放大器 |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BF862
N-channel junction FET
Preliminary specification
1999 Jun 29
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
FEATURES
PINNING SOT23
PIN
• High transition frequency for excellent sensitivity in
AM car radios
DESCRIPTION
1
2
3
source
• High transfer admittance.
drain
gate
APPLICATIONS
• Pre-amplifiers in AM car radios.
handbook, halfpage
3
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
TYP. MAX. UNIT
−
−
20
−
V
VGS (off)
IDSS
Ptot
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
−
−0.7
−
V
10
−
25
225
−
mA
mW
mS
°C
Ts ≤ 92 °C
−
|yfs|
30
−
40
−
Tj
junction temperature
150
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29
2
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
20
UNIT
−
−
−
−
−
−
V
V
V
VDG
VGS
IDS
IG
drain-gate voltage
20
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
−20
40
mA
mA
mW
°C
10
Ptot
Tstg
Tj
Ts ≤ 92 °C
225
+150
150
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
260
UNIT
Rth j-s
thermal resistance from junction to soldering point
K/W
Notes
1. Soldering point of the gate lead.
MGS298
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
1999 Jun 29
3
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−20
TYP. MAX.
UNIT
V(BR)GSS
VGS
VGS (off)
IGSS
gate-source breakdown voltage IGS = −1 µA; VDS = 0
−
−
V
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
VDS = 0; IG = 1 mA
VDS = 8 V; ID = 1 µA
VGS = −15 V; VDS = 0
VGS = 0; VDS = 8 V
−
−
1
V
−
−0.7
−
−
V
−
−1
25
nA
mA
IDSS
drain-source current
10
−
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
yfs
common source forward transfer Tj = 25 °C
admittance
30
40
−
mS
gos
common source output
conductance
Tj = 25 °C
−
−
400
µS
Ciss
Crss
en
input capacitance
f = 1 MHz
f = 1 MHz
−
−
−
−
10
−
−
−
−
pF
reverse transfer capacitance
equivalent noise input voltage
transition frequency
2.5
0.8
640
pF
f = 100 kHz
nV/√Hz
MHz
fT
1999 Jun 29
4
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 Jun 29
5
Philips Semiconductors
Preliminary specification
N-channel junction FET
BF862
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 29
6
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© Philips Electronics N.V. 1999
SCA66
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Printed in The Netherlands
125004/00/01/pp7
Date of release: 1999 Jun 29
Document order number: 9397 750 06154
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