BF862,235 [NXP]
BF862 - N-channel junction FET TO-236 3-Pin;
| 型号： | BF862,235 |
| 厂家： | 
NXP |
| 描述： | BF862 - N-channel junction FET TO-236 3-Pin |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BF862
N-channel junction FET
Product specification
2000 Jan 05
Supersedes data of 1999 Jun 29
Philips Semiconductors
Product specification
N-channel junction FET
BF862
FEATURES
PINNING SOT23
PIN
• High transition frequency for excellent sensitivity in
AM car radios
DESCRIPTION
1
2
3
source
• High transfer admittance.
drain
gate
APPLICATIONS
• Pre-amplifiers in AM car radios.
handbook, age
2
1
DESCRIPTION
d
s
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
g
3
Top view
MAM036
Marking code: 2Ap.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS MIN.
TYP. MAX. UNIT
−
−
20
V
VGSoff
IDSS
Ptot
yfs
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
−0.3
10
−0.8
−
−1.2
25
V
mA
mW
mS
°C
Ts ≤ 90 °C
−
−
300
−
35
−
45
−
Tj
junction temperature
150
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Jan 05
2
Philips Semiconductors
Product specification
N-channel junction FET
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
20
V
VDG
VGS
IDS
IG
drain-gate voltage
−
20
V
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
−
−20
40
V
−
mA
mA
mW
−
10
Ptot
Tstg
Tj
Ts ≤ 90 °C; note 1
−
300
−65
−
+150 °C
150
°C
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
200
UNIT
thermal resistance from junction to soldering
point
note 1
K/W
Note
1. Soldering point of the gate lead.
MCD808
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
2000 Jan 05
3
Philips Semiconductors
Product specification
N-channel junction FET
BF862
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)GSS
PARAMETER
CONDITIONS
MIN.
−20
TYP.
MAX.
UNIT
gate-source breakdown voltage IGS = −1 µA; VDS = 0
−
−
−
V
VGS
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
VDS = 0; IG = 1 mA
VDS = 8 V; ID = 1 µA
VGS = −15 V; VDS = 0
VGS = 0; VDS = 8 V
−
1
V
VGSoff
IGSS
IDSS
−0.3
−
−0.8
−
−1.2
−1
25
V
nA
mA
drain-source current
10
−
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
yfs
PARAMETER
CONDITIONS
Tj = 25 °C
MIN.
TYP.
MAX.
UNIT
common source forward transfer
admittance
35
45
−
mS
gos
Ciss
Crss
en
common source output conductance
input capacitance
Tj = 25 °C
f = 1 MHz
f = 1 MHz
f = 100 kHz
−
−
−
−
−
180
10
400
−
µS
pF
reverse transfer capacitance
equivalent noise input voltage
transition frequency
1.9
0.8
715
−
pF
−
nV/√Hz
MHz
fT
−
2000 Jan 05
4
Philips Semiconductors
Product specification
N-channel junction FET
BF862
MCD810
MCD809
40
300
handbook, halfpage
handbook, halfpage
I
DSS
g
os
(mA)
(µS)
30
200
20
10
0
100
0
0
0
−0.5
−1
−1.5
10
20
30
V
(V)
I
(mA)
DSS
GSoff
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; Tj = 25 °C.
Fig.4 Common-source output conductance as a
function of drain saturation current;
typical values.
Fig.3 Drain saturation current as a function of
gate-source cut-off voltage; typical values.
MCD812
MCD811
60
60
handbook, halfpage
handbook, halfpage
y
fs
y
fs
(mS)
(mS)
50
40
40
30
20
20
0
0
10
20
30
0
10
20
30
I
(mA)
I
(mA)
D
DSS
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; Tj = 25 °C.
Fig.5 Forward transfer admittance as a function
of drain saturation current; typical values.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
2000 Jan 05
5
Philips Semiconductors
Product specification
N-channel junction FET
BF862
MCD813
MCD814
30
20
handbook, halfpage
handbook, halfpage
V
= 0 V
I
GS
D
I
(mA)
16
D
(mA)
max
−0.1 V
20
12
−0.2 V
−0.3 V
typ
8
4
10
−0.4 V
−0.5 V
min
0
0
0
−1
−0.8
−0.6
−0.4
−0.2
0
4
8
12
V
(V)
DS
V
(V)
GS
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; Tj = 25 °C.
Fig.7 Drain current as a function of gate-source
voltage; typical values.
Fig.8 Drain current as a function of drain-source
voltage; typical values.
MCD815
MCD816
4
−10
12
handbook, halfpage
handbook, halfpage
10 mA
I
= 20 mA
I
D
G
1 mA
C
(nA)
(pF)
0.1 mA
2
−10
8
−1
C
is
4
I
GSS
−2
−4
−10
−10
C
rs
0
−8
0
5
10
15
20
V
25
(V)
−6
−4
−2
0
V
(V)
GS
DG
VDS = 8 V; f = 1 MHz; Tj = 25 °C.
VDS = 8 V; Tj = 25 °C.
Fig.10 Input and reverse transfer capacitance as
functions of gate-source voltage; typical
values.
Fig.9 Gate current as a function of drain-gate
voltage; typical values.
2000 Jan 05
6
Philips Semiconductors
Product specification
N-channel junction FET
BF862
MCD817
MCD818
2
3
10
10
−10
handbook, halfpage
handbook, halfpage
y
is
(mS)
y
rs
y
ϕ
rs
rs
10
(mS)
(deg)
b
is
ϕ
rs
2
1
1
−10
−1
10
g
is
−1
−2
10
−10
10
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
D = 15 mA; Tamb = 25 °C.
VDS = 8 V; VGS = 0; Tamb = 25 °C.
I
Fig.11 Common-source input admittance as a
function of frequency; typical values.
Fig.12 Common-source reverse admittance as a
function of frequency; typical values.
MCD819
MCD820
2
2
2
10
10
−10
handbook, halfpage
handbook, halfpage
y
y
os
fs
(mS)
y
ϕ
fs
fs
(mS)
(deg)
10
ϕ
fs
b
os
10
−10
1
g
os
−1
1
10
−1
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
f (MHz)
f (MHz)
VDS = 8 V; VGS = 0; Tamb = 25 °C.
VDS = 8 V; VGS = 0; Tamb = 25 °C.
Fig.13 Common-source forward transfer
admittance as a function of frequency;
typical values.
Fig.14 Common-source output admittance as a
function of frequency; typical values.
2000 Jan 05
7
Philips Semiconductors
Product specification
N-channel junction FET
BF862
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2000 Jan 05
8
Philips Semiconductors
Product specification
N-channel junction FET
BF862
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Jan 05
9
Philips Semiconductors
Product specification
N-channel junction FET
BF862
NOTES
2000 Jan 05
10
Philips Semiconductors
Product specification
N-channel junction FET
BF862
NOTES
2000 Jan 05
11
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69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/03/pp12
Date of release: 2000 Jan 05
Document order number: 9397 750 06562
相关型号：
BF862T/R
TRANSISTOR 40 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal
NXP
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