BF1205C_15 [JMNIC]
Dual N-channel dual gate MOS-FET;
| 型号： | BF1205C_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Dual N-channel dual gate MOS-FET |
| 文件： | 总22页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF1205C
Dual N-channel dual gate MOS-FET
Rev. 02 — 15 August 2006
Product data sheet
1. Product profile
1.1 General description
The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
bias of amplifier b.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; one with a fully integrated
bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross-modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio.
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment.
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
1.4 Quick reference data
Table 1.
Quick reference data
Per MOS-FET unless otherwise specified.
Symbol Parameter Conditions
Min Typ Max Unit
VDS
ID
drain-source voltage
-
-
-
-
-
-
6
V
drain current (DC)
30
mA
[1]
Ptot
yfs
total power dissipation
T
sp ≤ 107 °C
180 mW
forward transfer admittance f = 1 MHz
amplifier a; ID = 19 mA
amplifier b; ID = 13 mA
input capacitance at gate 1 f = 1 MHz
26
28
31
33
41
43
mS
mS
Cig1-ss
amplifier a
amplifier b
-
-
-
-
-
2.2 2.7 pF
2.0 2.5 pF
Crss
NF
reverse transfer capacitance f = 1 MHz
20
-
fF
noise figure
amplifier a; f = 400 MHz
amplifier b; f = 800 MHz
1.3 1.9 dB
1.4 2.1 dB
Xmod
cross-modulation
input level for k = 1 % at
40 dB AGC
amplifier a
amplifier b
100 105
100 103
-
-
dBµV
dBµV
Tj
junction temperature
-
-
150 °C
[1] Tsp is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2.
Discrete pinning
Pin
1
Description
gate 1 (a)
gate 2
Simplified outline
Symbol
6
5
4
2
AMP a
g1
(a)
d
(a)
3
gate 1 (b)
drain (b)
source
4
s
5
g2
1
2
3
6
drain (a)
001aaa706
g1
(b)
d
(b)
AMP b
sym033
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
2 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BF1205C
-
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking
Type number
Marking code[1]
BF1205C
M6*
[1] * = p or -: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per MOS-FET
VDS
ID
drain-source voltage
-
6
V
drain current (DC)
gate 1 current
-
30
mA
mA
mA
mW
°C
IG1
IG2
Ptot
Tstg
Tj
-
±10
±10
180
+150
150
gate 2 current
-
[1]
total power dissipation
storage temperature
junction temperature
T
sp ≤ 107 °C
-
−65
-
°C
[1] Tsp is the temperature at the soldering point of the source lead.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
240
Unit
Rth(j-s)
thermal resistance from junction
to soldering point
K/W
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
3 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aac193
250
tot
P
(mW)
200
150
100
50
0
0
50
100
150
200
T
(˚C)
sp
Fig 1. Power derating curve.
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 °C.
Symbol
Parameter
Conditions
Min Typ Max Unit
Per MOS-FET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier a
6
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
amplifier b
6
-
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage VGS = VDS = 0 V; IG1-S = 10 mA
gate 2-source breakdown voltage VGS = VDS = 0 V; IG2-S = 10 mA
6
10
10
1.5
1.5
1.0
1.0
6
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
0.5
0.5
0.3
0.4
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V; VDS(b) = 5 V; RG1 = 150 kΩ
amplifier a; VDS(a) = 5 V
amplifier b
[1]
[2]
14
9
-
-
24
17
mA
mA
IG1-S
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS(a) = 0 V
amplifier a; VG1-S(a) = 5 V; ID(b) = 0 A
-
-
-
-
-
-
50
50
20
nA
nA
nA
amplifier b; VG1-S(b) = 5 V; VDS(b) = 0 V
IG2-S
VG2-S = 4 V;
V
V
G1-S(a) = VDS(a) = VDS(b) = 0 V;
G1-S(b) = 0 V;
[1] RG1 connects gate 1 (b) to VGG = 0 V (see Figure 3).
[2] RG1 connects gate 1 (b) to VGG = 5 V (see Figure 3).
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
4 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa552
20
I
D
(mA)
16
(1)
(2)
12
8
(3)
g1 (a)
g2
d (a)
s
(4)
4
(6)
(5)
g1 (b)
d (b)
R
G1
0
0
1
2
3
4
5
V
GG
V
(V)
001aaa553
GG
(1) ID(b); RG1 = 120 kΩ.
(2) ID(b); RG1 = 150 kΩ.
(3) ID(b); RG1 = 180 kΩ.
(4) ID(a); RG1 = 180 kΩ.
(5) ID(a); RG1 = 150 kΩ.
(6) ID(a); RG1 = 120 kΩ.
VGG = 5 V: amplifier a is off; amplifier b is on
VGG = 0 V: amplifier a is on; amplifier b is off.
Fig 2. Drain currents of MOS-FET a and b as function
of VGG
Fig 3. Functional diagram.
.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier a
Table 8.
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Dynamic characteristics for amplifier a[1]
Symbol Parameter
Conditions
Tj = 25 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
yfs
forward transfer admittance
26
-
31
41
mS
pF
pF
pF
fF
Cig1-ss
Cig2-ss
Coss
Crss
input capacitance at gate 1
input capacitance at gate 2
output capacitance
2.2 2.7
-
3.0
0.9
20
-
-
-
-
reverse transfer capacitance f = 1 MHz
-
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
31
26
21
-
35
30
25
3.0
39
34
29
-
dB
dB
dB
dB
dB
dB
NF
noise figure
-
1.3 1.9
1.4 2.1
f = 800 MHz; YS = YS(opt)
-
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
5 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
Table 8.
Dynamic characteristics for amplifier a[1] …continued
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Xmod cross-modulation
Conditions
Min Typ Max Unit
[2]
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
90
-
-
-
-
-
-
dBµV
dBµV
dBµV
dBµV
90
99
-
100 105
[1] For the MOS-FET not in use: VG1-S(b) = 0 V; VDS(b) = 0 V.
[2] Measured in Figure 33 test circuit.
8.1.1 Graphs for amplifier a
001aaa554
(1)
001aaa555
30
32
I
(1)
(2)
D
(2)
(3)
I
D
(mA)
(mA)
(4)
(5)
24
(3)
(4)
20
16
8
(5)
(6)
(7)
10
(6)
(7)
(8)
(9)
0
0
0
0.4
0.8
1.2
1.6
V
2
(V)
0
2
4
6
V
(V)
DS
G1-S
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(1) VG1-S(a) = 1.8 V.
(2) VG1-S(a) = 1.7 V.
(3) VG1-S(a) = 1.6 V.
(4) VG1-S(a) = 1.5 V.
(5) VG1-S(a) = 1.4 V.
(6) VG1-S(a) = 1.3 V.
(7) VG1-S(a) = 1.2 V.
(8) VG1-S(a) = 1.1 V.
(9) VG1-S(a) = 1 V.
VDS(a) = 5 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
VG2-S = 4 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 4. Transfer characteristics; typical values.
Fig 5. Output characteristics; typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
6 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa557
001aaa556
20
(a)
40
I
D
y
fs
(mA)
16
(mS)
(1)
(2)
30
12
8
20
10
0
(3)
(4)
4
(5)
(6)
0
0
20
40
60
0
8
16
24
32
I
(b) (µA)
I
(mA)
D
D
(1) VG2-S = 4 V.
VDS(a) = 5 V; VG2-S = 4 V; VDS(b) = 5 V;
VG1-S(b) = 0 V; Tj = 25 °C.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
VDS(a) = 5 V; VG1-S(b) = VDS(b) = 0 V; Tj = 25 °C.
Fig 6. Forward transfer admittance as a function of
drain current; typical values.
Fig 7. Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
7 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa558
001aaa559
20
32
I
D
I
D
(mA)
16
(mA)
24
(1)
12
8
(2)
(3)
16
8
(4)
(5)
(6)
4
0
0
0
1
2
3
4
V
5
(V)
0
2
4
6
V
(V)
G2-S
supply
VDS(a) = VDS(b) = Vsupply, VG2-S = 4 V, Tj = 25 °C,
RG1(b) = 150 kΩ (connected to ground); see
Figure 3.
(1) VDS(b) = 5 V.
(2) VDS(b) = 4.5 V.
(3) VDS(b) = 4 V.
(4) VDS(b) = 3.5 V.
(5) VDS(b) = 3 V.
(6) VDS(b) = 2.5 V.
VDS(a) = 5 V; VG1-S(b) = 0 V; gate 1 (a) = open;
Tj = 25 °C.
Fig 8. Drain current of amplifier a as a function of
supply voltage of a and b amplifier; typical
values.
Fig 9. Drain current as a function of gate 2 and drain
supply voltage; typical values.
001aaa560
001aaa561
120
0
gain
reduction
V
unw
(dBµV)
(dB)
10
110
20
30
40
50
100
90
80
0
10
20
30
40
50
0
1
2
3
4
gain reduction (dB)
V
(V)
AGC
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 33.
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; f = 50 MHz; see
Figure 33.
Fig 10. Unwanted voltage for 1 % cross-modulation as
a function of gain reduction; typical values.
Fig 11. Gain reduction as a function of AGC voltage;
typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
8 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa562
001aaa564
2
32
10
b , g
is is
(mS)
I
D
(mA)
24
10
b
g
is
16
8
1
is
−1
10
−2
0
10
2
3
0
20
40
60
10
10
10
gain reduction (dB)
f (MHz)
VDS(a) = VDS(b) = 5 V; VG1-S(b) = 0 V; f = 50 MHz;
Tamb = 25 °C; see Figure 33.
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
Fig 12. Drain current as a function of gain reduction;
typical values.
Fig 13. Input admittance as a function of frequency;
typical values.
001aaa565
001aaa566
2
2
3
2
3
10
10
10
10
y
−ϕ
rs
rs
(mS)
(deg)
y
−ϕ
fs
y
fs
fs
(mS)
(deg)
−ϕ
rs
2
10
10
10
10
y
rs
−ϕ
fs
10
10
1
3
1
3
1
1
2
2
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V;
ID(a) = 19 mA.
Fig 14. Forward transfer admittance and phase as a
function of frequency; typical values.
Fig 15. Reverse transfer admittance and phase as a
function of frequency: typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
9 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa567
10
b , g
os os
(mS)
b
g
os
1
os
−1
10
−2
10
2
3
10
10
10
f (MHz)
VDS(a) = 5 V; VG2-S(a) = 4 V; VDS(b) = VG1-S(b) = 0 V; ID(a) = 19 mA.
Fig 16. Output admittance as a function of frequency; typical values.
8.1.2 Scattering parameters for amplifier a
Table 9.
Scattering parameters for amplifier a
VDS(a) = 5 V; VG2-S = 4 V; ID(a) = 19 mA; VDS(b) = 0 V; VG-1S(b) = 0 V; Tamb = 25 °C.
f
S11
S21
S12
S22
(MHz)
Magnitude Angle Magnitude Angle Magnitude Angle Magnitude Angle
ratio
(deg) ratio
−3.91 3.07
−7.76 3.06
−15.42 3.04
−22.99 3.01
−30.52 2.96
−37.83 2.90
−45.14 2.83
−52.31 2.76
−59.47 2.69
−66.23 2.60
−73.10 2.52
(deg) ratio
(deg) ratio
83.61 0.992
83.19 0.992
78.19 0.990
73.75 0.988
69.82 0.985
66.12 0.982
62.11 0.979
58.86 0.975
58.28 0.972
50.64 0.968
47.28 0.966
(deg)
50
0.992
0.990
0.982
0.971
0.956
0.938
0.917
0.893
0.867
0.838
0.807
175.56 0.0007
171.18 0.0017
162.42 0.0026
153.79 0.0037
145.22 0.0047
136.78 0.0055
128.46 0.0061
120.20 0.0065
111.98 0.0068
103.90 0.0067
95.875 0.0065
−1.47
100
200
300
400
500
600
700
800
900
1000
−2.93
−5.84
−8.71
−11.59
−14.48
−17.31
−20.14
−22.98
−25.85
−28.74
8.1.3 Noise data for amplifier a
Table 10. Noise data for amplifier a
VDS(a) = 5 V; VG2-S = 4 V; ID(a) = 19 mA; VDS(b) = 0 V; VG-1S(b) = 0 V; Tamb = 25 °C.
f
Fmin
(dB)
Γopt
rn
(Ω)
(MHz)
ratio
0.718
0.677
(deg)
16.06
37.59
400
800
1.3
1.4
0.683
0.681
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
10 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
8.2 Dynamic characteristics for amplifier b
Table 11. Dynamic characteristics for amplifier b
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA.
Symbol Parameter
Conditions
Min Typ Max Unit
yfs
forward transfer admittance Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
28
-
33
43
mS
Cig1-ss
Cig2-ss
Coss
Crss
2.0
3.4
0.85
20
2.5 pF
-
-
-
-
pF
pF
fF
output capacitance
f = 1 MHz
-
reverse transfer capacitance f = 1 MHz
-
[1]
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
31
28
24
-
35
32
28
5
39
36
32
-
dB
dB
dB
dB
NF
noise figure
-
1.3
1.4
1.9 dB
2.1 dB
f = 800 MHz; YS = YS(opt)
-
[2]
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
90
-
-
-
-
-
-
dBµV
at 10 dB AGC
88
94
dBµV
dBµV
dBµV
at 20 dB AGC
-
at 40 dB AGC
100 103
[1] For the MOS-FET not in use: VG1-S(a) = 0 V; VDS(a) = 0 V.
[2] Measured in Figure 34 test circuit.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
11 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
8.2.1 Graphs for amplifier b
001aaa568
001aaa569
30
32
(1)
(4)
I
D
(2)
(3)
I
D
(1)
(2)
(mA)
(mA)
24
(5)
20
(3)
(4)
(5)
16
8
(6)
(7)
10
(6)
(7)
0
0
0
0.4
0.8
1.2
1.6
V
2
(V)
0
2
4
6
V
(V)
DS
G1-S
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(1) VG1-S(b) = 1.6 V.
(2) VG1-S(b) = 1.5 V.
(3) VG1-S(b) = 1.4 V.
(4) VG1-S(b) = 1.3 V.
(5) VG1-S(b) = 1.2 V.
(6) VG1-S(b) = 1.1 V.
(7) VG1-S(b) = 1 V.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C.
VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C.
Fig 17. Transfer characteristics; typical values.
Fig 18. Output characteristics; typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
12 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa570
001aaa571
100
40
(1)
(2)
(1)
(2)
I
G1
y
fs
(µA)
(mS)
(3)
(3)
80
30
(4)
(4)
(5)
60
40
20
0
20
10
0
(5)
(6)
(7)
(6)
(7)
0
0.4
0.8
1.2
1.6
V
2
0
8
16
24
32
(V)
I (mA)
D
G1-S
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C.
Fig 19. Gate 1 current as a function of gate 1 voltage;
typical values.
Fig 20. Forward transfer admittance as a function of
drain current; typical values.
001aaa572
001aaa573
24
16
I
D
I
D
(mA)
(mA)
12
16
8
4
0
8
0
0
10
20
30
40
I
50
(µA)
0
1
2
3
4
5
V
(V)
G1
GG
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
Tj = 25 °C.
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
Tj = 25 °C; RG1(b) = 150 kΩ (connected to VGG); see
Figure 3.
Fig 21. Drain current as a function of gate 1 current;
typical values.
Fig 22. Drain current as a function of gate 1 supply
voltage (VGG); typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
13 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa574
001aaa575
24
16
(1)
(2)
(3)
I
D
(1)
(2)
I
D
(mA)
(mA)
12
(4)
(5)
(3)
(4)
16
(5)
8
4
0
(6)
(7)
(8)
8
0
0
2
4
6
0
2
4
6
V
= V
(V)
V
(V)
G2-S
GG
DS
(1) RG1(b) = 68 kΩ.
(2) RG1(b) = 82 kΩ.
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
(3) RG1(b) = 100 kΩ.
(4) RG1(b) = 120 kΩ.
(5) RG1(b) = 150 kΩ.
(6) RG1(b) = 180 kΩ.
(7) RG1(b) = 220 kΩ.
(8) RG1(b) = 270 kΩ.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C;
RG1(b) = 150 kΩ (connected to VGG); see Figure 3.
VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C;
RG1(b) is connected to VGG; see Figure 3.
Fig 23. Drain current as a function of gate 1 (VGG),
drain supply voltage and value of RG1; typical
values.
Fig 24. Drain current as a function of gate 2 voltage;
typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
14 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa576
001aaa577
30
120
V
unw
(1)
(2)
(3)
(4)
(5)
I
G1
(dBµV)
(µA)
110
20
100
90
10
0
80
0
2
4
6
0
20
40
60
V
(V)
gain reduction (dB)
G2-S
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(b) = 5 V; VGG = 5 V; VDS(a) = VG1-S(a) = 0 V;
RG1(b) = 150 kΩ (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 34.
VDS(b) = 5 V; VDS(a) = VG1-S(a) = 0 V; Tj = 25 °C;
RG1(b) = 150 kΩ (connected to VGG); see Figure 3.
Fig 25. Gate 1 current as a function of gate 2 voltage;
typical values.
Fig 26. Unwanted voltage for 1 % cross-modulation as
a function of gain reduction; typical values.
001aaa578
001aaa579
0
16
gain
reduction
I
D
(dB)
(mA)
10
12
20
30
40
50
8
4
0
0
1
2
3
4
0
20
40
60
V
(V)
gain reduction (dB)
AGC
VDS(b) = 5 V; VGG = 5 V; VDS(a) = VG1-S(a) = 0 V;
RG1(b) = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
VDS(b) = 5 V; VGG = 5 V; VDS(a) = VG1-S(a) = 0 V;
RG1(b) = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 34.
Fig 27. Typical gain reduction as a function of AGC
voltage.
Fig 28. Drain current as a function of gain reduction;
typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
15 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
001aaa581
001aaa582
2
2
2
10
10
10
b , g
is is
(mS)
y
fs
y
−ϕ
fs
fs
10
(mS)
(deg)
b
g
is
1
10
10
−ϕ
fs
is
−1
10
−2
1
3
10
1
2
3
2
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
ID(b) = 13 mA.
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
ID(b) = 13 mA.
Fig 29. Input admittance as a function of frequency;
typical values.
Fig 30. Forward transfer admittance and phase as a
function of frequency; typical values.
001aaa583
001aaa584
3
3
10
10
10
y
−ϕ
b , g
os os
rs
rs
(µS)
(deg)
(mS)
−ϕ
2
2
rs
b
g
os
10
10
1
y
rs
os
−1
10
10
10
−2
1
3
1
10
2
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
ID(b) = 13 mA.
VDS(b) = 5 V; VG2-S = 4 V; VDS(a) = VG1-S(a) = 0 V;
ID(b) = 13 mA.
Fig 31. Reverse transfer admittance and phase as a
function of frequency; typical values.
Fig 32. Output admittance as a function of frequency;
typical values.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
16 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
8.2.2 Scattering parameters for amplifier b
Table 12. Scattering parameters for amplifier b
VDS(b) = 5 V; VG2-S = 4 V; ID(b) = 13 mA; VDS(a) = 0 V; VG1-S(a) = 0 V; Tamb = 25 °C.
f
S11
S21
S12
S22
(MHz)
Magnitude Angle Magnitude Angle Magnitude Angle Magnitude Angle
ratio
(deg) ratio
−3.66 3.26
−7.01 3.24
−13.71 3.22
−20.36 3.19
−27.04 3.15
−33.62 3.10
−40.16 3.05
−46.70 2.99
−52.07 2.92
−59.48 2.84
−65.86 2.77
(deg)
ratio
(deg) ratio
84.23 0.988
84.91 0.988
83.96 0.986
82.86 0.984
81.88 0.982
80.92 0.978
80.15 0.975
79.68 0.972
78.28 0.968
78.28 0.965
78.15 0.961
(deg)
50
0.986
0.982
0.975
0.966
0.955
0.943
0.927
0.909
0.891
0.868
0.846
175.93 0.0008
172.04 0.0015
164.24 0.0029
156.53 0.0042
148.86 0.0055
141.24 0.0066
133.70 0.0076
126.13 0.0086
118.64 0.0094
111.09 0.0100
103.58 0.0107
−1.65
100
200
300
400
500
600
700
800
900
1000
−3.27
−6.50
−9.69
−12.88
−16.07
−19.21
−22.35
−25.52
−28.65
−31.85
8.2.3 Noise data for amplifier b
Table 13. Noise data for amplifier b
VDS(b) = 5 V; VG2-S = 4 V; ID(b) = 13 mA; VDS(a) = 0 V; VG1-S(a) = 0 V; Tamb = 25 °C.
f
Fmin
(dB)
Γopt
rn
(Ω)
(MHz)
ratio
0.695
0.674
(deg)
13.11
32.77
400
800
1.3
1.4
0.694
0.674
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
17 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
9. Test information
V
(a)
DS
5V
V
AGC
4.7 nF
10 kΩ
L1
2.2 µH
4.7 nF
4.7 nF
d (a)
S
g1 (a)
g2
R
GEN
50 Ω
R
L
50 Ω
4.7 nF
4.7 nF
50 Ω
BF1205C
V
i
g1 (b)
d (b)
L2
2.2 µH
50 Ω
R
G1
4.7 nF
V
GG
0V
V
(b)
DS
5V
001aaa563
Fig 33. Cross-modulation test set-up for amplifier a.
V
(a)
5V
V
DS
AGC
4.7 nF
10 kΩ
L1
2.2 µH
4.7 nF
d (a)
S
g1 (a)
4.7 nF
4.7 nF
50 Ω
g2
BF1205C
4.7 nF
g1 (b)
d (b)
R
GEN
50 Ω
L2
2.2 µH
R
L
50 Ω
50 Ω
R
G1
4.7 nF
V
i
V
(b)
DS
5V
V
GG
5V
001aaa580
Fig 34. Cross-modulation test set-up for amplifier b.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
18 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
10. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 35. Package outline.
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
19 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
11. Revision history
Table 14. Revision history
Document ID
Release date
20060815
Data sheet status
Change notice
Supersedes
BF1205C_2
Product data sheet
-
BF1205C_1
(9397 750 13005)
Modifications:
• Figure 1: replaced drawing with correct drawing 001aac193
BF1205C_1
20040518
Product data sheet
-
-
(9397 750 13005)
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
20 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
malfunction of a Philips Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BF1205C_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 15 August 2006
21 of 22
BF1205C
Philips Semiconductors
Dual N-channel dual gate MOS-FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
8
8.1
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics for amplifier a. . . . . . . 5
Graphs for amplifier a . . . . . . . . . . . . . . . . . . . . 6
Scattering parameters for amplifier a . . . . . . . 10
Noise data for amplifier a . . . . . . . . . . . . . . . . 10
Dynamic characteristics for amplifier b. . . . . . 11
Graphs for amplifier b . . . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier b . . . . . . . 17
Noise data for amplifier b . . . . . . . . . . . . . . . . 17
8.1.1
8.1.2
8.1.3
8.2
8.2.1
8.2.2
8.2.3
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 21
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 15 August 2006
Document identifier: BF1205C_2
相关型号：
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