BF1207,115 [NXP]
Dual N-channel dual-gate MOSFET TSSOP 6-Pin;
| 型号： | BF1207,115 |
| 厂家： | 
NXP |
| 描述： | Dual N-channel dual-gate MOSFET TSSOP 6-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总22页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF1207
Dual N-channel dual gate MOSFET
Rev. 01 — 28 July 2005
Product data sheet
1. Product profile
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■ Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
■ Internal switch to save external components
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio
1.3 Applications
■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
ID
drain-source voltage
drain current
DC
DC
-
-
-
-
-
-
6
V
30
mA
[1]
Ptot
yfs
total power dissipation
T
sp ≤ 107 °C
180 mW
forward transfer admittance f = 1 MHz
amplifier A; ID = 18 mA
25
26
30
31
40
41
mS
mS
amplifier B; ID = 14 mA
f = 100 MHz
Ciss(G1) input capacitance at gate1
amplifier A
-
-
-
-
-
2.2 2.7 pF
1.9 2.4 pF
amplifier B
Crss
NF
reverse transfer capacitance f = 100 MHz
20
-
-
-
fF
noise figure
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
1.3
1.4
dB
dB
Xmod
cross-modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
100 105
100 103
-
-
dBµV
dBµV
Tj
junction temperature
-
-
150 °C
[1] Tsp is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2:
Discrete pinning
Pin
1
Description
drain (AMP A)
source
Simplified outline
Symbol
AMP B
6
5
4
2
3
drain (AMP B)
gate1 (AMP B)
gate2
G1B
G2
DB
4
5
1
2
3
6
gate1 (AMP A)
S
G1A
DA
AMP A
sym108
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
2 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BF1207
-
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 4:
Marking
Type number
Marking code[1]
BF1207
M2*
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per MOSFET
VDS
ID
drain-source voltage
drain current
DC
DC
-
6
V
-
30
mA
mA
mA
mW
°C
IG1
IG2
Ptot
Tstg
Tj
gate1 current
-
±10
±10
180
+150
150
gate2 current
-
[1]
total power dissipation
storage temperature
junction temperature
T
sp ≤ 107 °C
-
−65
-
°C
[1] Tsp is the temperature at the soldering point of the source lead.
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
3 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac741
250
tot
P
(mW)
200
150
100
50
0
0
50
100
150
200
T
(°C)
sp
Fig 1. Power derating curve
6. Thermal characteristics
Table 6:
Thermal characteristics
Parameter
Symbol
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to soldering point
240
K/W
7. Static characteristics
Table 7:
Static characteristics
Tj = 25 °C.
Symbol
Parameter
Conditions
Min Typ Max Unit
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
6
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
amplifier B
6
-
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
VGS = VDS = 0 V; IG1-S = 10 mA
VGS = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 68 kΩ
amplifier A
6
10
10
1.5
1.5
1.0
1.0
6
0.5
0.5
0.3
0.4
[1]
[2]
13
9
-
-
23
19
mA
mA
amplifier B
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
4 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
Table 7:
Static characteristics …continued
Tj = 25 °C.
Symbol
Parameter
Conditions
Min Typ Max Unit
IG1-S
gate1 cut-off current
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V
amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A
VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V;
-
-
-
-
-
-
50
50
20
nA
nA
nA
IG2-S
gate2 cut-off current
[1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
001aac742
20
I
D
(mA)
16
(1)
G1B
G2
DB
S
(2)
(3)
12
8
G1A
DA
R
G1
(4)
V
4
GG
001aac881
(6)
(5)
0
0
1
2
3
4
5
V
(V)
GG
(1) ID(A); RG1 = 47 kΩ.
(2) ID(A); RG1 = 68 kΩ.
VGG = 5 V: amplifier A is on; amplifier B is off.
VGG = 0 V: amplifier A is off; amplifier B is on.
(3) ID(A); RG1 = 100 kΩ.
(4) ID(B); RG1 = 100 kΩ.
(5) ID(B); RG1 = 68 kΩ.
(6) ID(B); RG1 = 47 kΩ.
VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 2. Drain currents of MOSFET A and B as function
of VGG
Fig 3. Functional diagram
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
5 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8:
Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 18 mA. [1]
Symbol Parameter
Conditions
Tj = 25 °C
Min Typ
Max Unit
yfs
forward transfer admittance
25
-
30
40
mS
pF
pF
pF
fF
Ciss(G1)
Ciss(G2)
Coss
input capacitance at gate1
input capacitance at gate2
output capacitance
f = 100 MHz
f = 1 MHz
2.2
3.5
0.9
20
2.7
-
-
-
-
f = 100 MHz
-
Crss
reverse transfer capacitance f = 100 MHz
-
Gtr
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
30
26
21
-
34
38
34
29
-
dB
dB
dB
dB
dB
dB
30
25
NF
noise figure
3.0
1.3
1.4
-
-
f = 800 MHz; YS = YS(opt)
-
-
[2]
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz;
f
unw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
90
-
-
-
-
-
-
dBµV
dBµV
dBµV
dBµV
90
99
-
100 105
[1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) = 0 V.
[2] Measured in Figure 29 test circuit.
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
6 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.1.1 Graphs for amplifier A
001aac882
(1)
001aaa883
35
32
I
D
(1)
(2)
(3)
(mA)
30
I
D
(2)
(mA)
(3)
24
25
20
15
10
5
(4)
(5)
(4)
(5)
(6)
16
8
(7)
(8)
(9)
(6)
(7)
0
0
0
0.4
0.8
1.2
1.6
V
2.0
(V)
0
2
4
6
V
(V)
DS
G1-S
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(1) VG1-S(A) = 1.9 V.
(2) VG1-S(A) = 1.8 V.
(3) VG1-S(A) = 1.7 V.
(4) VG1-S(A) = 1.6 V.
(5) VG1-S(A) = 1.5 V.
(6) VG1-S(A) = 1.4 V.
(7) VG1-S(A) = 1.3 V.
(8) VG1-S(A) = 1.2 V.
(9) VG1-S(A) = 1.1 V.
VDS(A) = 5 V; Tj = 25 °C.
VDS(A) = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig 4. Amplifier A: transfer characteristics; typical
values
Fig 5. Amplifier A: output characteristics; typical
values
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac884
001aac885
(1)
40
25
I
D
y
fs
(mA)
20
(mS)
(2)
(1)
(2)
30
(3)
(4)
15
10
5
(5)
(6)
(7)
20
10
0
(3)
(4)
(5)
16
(7)
(6)
0
0
8
24
32
0
2
4
6
I
(mA)
V
= V
(V)
DS
D
GG
(1) VG2-S = 4 V.
(1) RG1(A) = 39 kΩ.
(2) RG1(A) = 47 kΩ.
(3) RG1(A) = 68 kΩ.
(4) RG1(A) = 82 kΩ.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(5) RG1(A) = 100 kΩ.
(6) RG1(A) = 120 kΩ.
(7) RG1(A) = 150 kΩ.
VG2-S = 4 V; Tj = 25 °C.
VDS(A) = 5 V; Tj = 25 °C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
Fig 7. Amplifier A: drain current as a function of VDS
and VGG; typical values
001aac886
20
I
D
(mA)
16
12
8
4
0
0
1
2
3
4
V
5
(V)
supply
VG2-S = 4 V, Tj = 25 °C, RG1(B) = 68 kΩ (connected to ground); see Figure 3.
Fig 8. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
8 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac887
001aac888
120
0
gain
V
reduction
(dB)
unw
(dBµV)
10
110
20
30
40
50
100
90
80
0
10
20
30
40
50
0
1
2
3
4
gain reduction (dB)
V
(V)
AGC
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 29.
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
see Figure 29.
Fig 9. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
Fig 10. Amplifier A: gain reduction as a function of
AGC voltage; typical values
001aac889
32
I
D
(mA)
24
16
8
0
0
10
20
30
40
50
gain reduction (dB)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz; Tamb = 25 °C; see Figure 29.
Fig 11. Amplifier A: drain current as a function of gain reduction; typical values
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
9 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac890
001aac891
2
2
2
10
10
−10
b , g
is is
(mS)
|y |
fs
|y |
(mS)
ϕ
fs
(deg)
fs
10
b
g
is
1
10
−10
ϕ
fs
is
−1
10
−2
10
1
−1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 12. Amplifier A: input admittance as a function of
frequency; typical values
Fig 13. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
001aac892
001aac893
3
3
10
10
−10
|y
|
ϕ
b , g
os os
rs
rs
(µS)
(deg)
(mS)
b
g
os
ϕ
2
rs
2
−10
10
1
|y
|
rs
os
−1
−10
−1
10
10
−2
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 18 mA.
Fig 14. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
Fig 15. Amplifier A: output admittance as a function of
frequency; typical values
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
10 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9:
Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 18 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
s11
s21
s12
s22
(MHz)
Magnitude Angle
Magnitude Angle Magnitude Angle Magnitude Angle
(ratio)
0.987
0.983
0.976
0.966
0.952
0.935
0.917
0.898
0.876
0.852
(deg)
(ratio)
2.87
(deg)
(ratio)
(deg)
(ratio)
(deg)
50
−4.169
−8.109
−15.97
175.5 0.0008
171.14 0.0015
162.44 0.0028
153.77 0.0041
145.23 0.0053
136.82 0.0063
128.50 0.0072
120.44 0.0079
112.33 0.0084
104.32 0.0089
96.42 0.0091
83.82 0.992
82.08 0.992
77.50 0.990
73.45 0.989
69.42 0.986
65.72 0.984
61.48 0.981
58.05 0.977
52.74 0.974
48.61 0.970
43.86 0.967
−1.42
100
200
300
400
500
600
700
800
900
2.95
−2.86
2.93
−5.66
−23.844 2.89
−31.575 2.84
−35.225 2.78
−46.678 2.72
−54.094 2.65
−61.205 2.57
−68.299 2.49
−75.321 2.41
−8.49
−11.28
−14.03
−16.80
−19.55
−22.32
−25.10
−27.88
1000 0.826
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
11 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 10: Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 14 mA. [1]
Symbol Parameter
Conditions
Min Typ
Max Unit
41 mS
2.3 pF
yfs forward transfer admittance Tj = 25 °C
26
-
31
Ciss(G1) input capacitance at gate1
Ciss(G2) input capacitance at gate2
f = 100 MHz
f = 1 MHz
1.8
3.5
0.8
20
-
-
-
-
pF
pF
fF
Coss
Crss
Gtr
output capacitance
f = 100 MHz
-
reverse transfer capacitance f = 100 MHz
-
power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
30
27
23
-
34
31
27
5
38
35
31
-
dB
dB
dB
dB
dB
dB
NF
noise figure
-
1.3
1.4
-
f = 800 MHz; YS = YS(opt)
-
-
[2]
Xmod
cross-modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
90
-
-
-
-
-
-
dBµV
dBµV
dBµV
dBµV
at 10 dB AGC
88
94
at 20 dB AGC
-
at 40 dB AGC
100 103
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Measured in Figure 30 test circuit.
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
12 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.1 Graphs for amplifier B
001aac894
(1)
001aac895
30
32
I
D
(2)
I
D
(mA)
(3)
(4)
(mA)
24
(1)
(2)
20
(3)
(4)
16
8
(5)
(5)
(6)
(7)
10
(6)
(7)
0
0
0
0.4
0.8
1.2
1.6
V
2
(V)
0
2
4
6
V
(V)
DS
G1-S
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
(1) VG1-S(B) = 1.7 V.
(2) VG1-S(B) = 1.6 V.
(3) VG1-S(B) = 1.5 V.
(4) VG1-S(B) = 1.4 V.
(5) VG1-S(B) = 1.3 V.
(6) VG1-S(B) = 1.2 V.
(7) VG1-S(B) = 1.1 V.
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 16. Amplifier B: transfer characteristics; typical
values
Fig 17. Amplifier B: output characteristics; typical
values
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
13 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac896
001aac897
40
20
I
D
y
fs
(mA)
(mS)
(1)
(2)
16
30
(1)
(2)
(3)
(4)
(5)
12
8
20
10
0
(3)
4
(4)
(5)
(7)
(6)
0
0
8
16
24
32
0
1
2
3
4
V
5
(V)
I
(mA)
D
G2-S
(1) VG2-S = 4 V.
(1) VDS = 5 V.
(2) VDS = 4.5 V.
(3) VDS = 4 V.
(4) VDS = 3.5 V.
(5) VDS = 3 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VG1-S(A) = 0 V; Tj = 25 °C.
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 18. Amplifier B: forward transfer admittance as a
function of drain current; typical values
Fig 19. Amplifier B: drain current as function of gate2
voltage; typical values
001aac899
001aac898
16
20
I
D(A)
I
D
(mA)
16
(mA)
12
12
8
8
4
0
4
0
−40
−30
−20
−10
0
0
2
4
6
I
(µA)
V
(V)
G1
DS
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 °C.
VDS(B) = 5 V; VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 °C.
Fig 20. Amplifier B: drain current as a function of drain
source voltage; typical values
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
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Product data sheet
Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac900
001aac901
120
0
gain
V
reduction
(dB)
unw
(dBµV)
10
110
20
30
40
50
100
90
80
0
20
40
60
0
1
2
3
4
gain reduction (dB)
V
(V)
AGC
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 kΩ (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 30.
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz;
Tamb = 25 °C; see Figure 30.
Fig 22. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
Fig 23. Amplifier B: typical gain reduction as a function
of AGC voltage; typical values
001aac902
20
I
D
(mA)
16
12
8
4
0
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 kΩ (connected to VGG); f = 50 MHz; Tamb = 25 °C; see
Figure 30.
Fig 24. Amplifier B: drain current as a function of gain reduction; typical values
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Product data sheet
Rev. 01 — 28 July 2005
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BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aac903
001aac904
2
2
2
10
10
−10
b , g
is is
(mS)
|y |
fs
|y |
(mS)
ϕ
fs
(deg)
fs
10
b
g
is
1
10
−10
ϕ
fs
is
−1
10
−2
10
1
−1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 25. Amplifier B: input admittance as a function of
frequency; typical values
Fig 26. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
001aac905
001aac906
3
3
10
−10
10
|y
|
ϕ
b , g
os os
rs
rs
(µS)
(deg)
(mS)
b
g
os
ϕ
2
2
rs
10
−10
1
|y
|
rs
os
−1
10
−10
−1
10
−2
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
VDS(B) = 5 V; VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V;
ID(B) = 14 mA.
Fig 27. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
Fig 28. Amplifier B: output admittance as a function of
frequency; typical values
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Product data sheet
Rev. 01 — 28 July 2005
16 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 11: Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 14 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f
s11
s21
s12
s22
(MHz)
Magnitude Angle Magnitude Angle Magnitude Angle Magnitude Angle
(ratio)
0.993
0.992
0.987
0.979
0.969
0.957
0.943
0.927
0.907
0.885
0.858
(deg) (ratio)
−3.018 3.07
−6.186 3.07
−12.43 3.09
−18.60 3.02
−24.62 2.99
−30.72 2.95
−36.71 2.90
−42.77 2.86
−48.91 2.79
−54.77 2.736
−61.01 2.675
(deg) (ratio)
176.04 0.0004
172.05 0.0011
164.13 0.0024
156.28 0.0036
148.48 0.0046
140.69 0.0056
132.87 0.0065
125.21 0.0074
117.22 0.0082
109.29 0.0086
101.18 0.0092
(deg) (ratio)
95.97 0.991
90.33 0.990
85.03 0.988
82.94 0.986
81.97 0.983
81.03 0.980
79.77 0.977
79.04 0.973
79.42 0.969
75.47 0.964
73.48 0.958
(deg)
50
−1.39
100
200
300
400
500
600
700
800
900
1000
−2.79
−5.49
−8.21
−10.91
−13.63
−16.40
−19.13
−21.93
−24.85
−27.75
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
17 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
9. Test information
V
V
DS(B)
5V
AGC
4.7 nF
10 kΩ
L1
2.2 µH
4.7 nF
DB
G1B
4.7 nF
4.7 nF
50 Ω
S
G2
BF1207
4.7 nF
G1A
DA
R
GEN
50 Ω
L2
2.2 µH
R
L
50 Ω
50 Ω
R
G1
4.7 nF
V
i
V
V
GG
5 V
DS(A)
5 V
001aac907
Fig 29. Cross-modulation test set-up for amplifier A
V
V
DS(B)
5V
AGC
4.7 nF
10 kΩ
L1
2.2 µH
4.7 nF
4.7 nF
4.7 nF
4.7 nF
DB
G1B
R
R
L
50 Ω
GEN
50 Ω
S
G2
50 Ω
BF1207
V
i
G1A
DA
L2
2.2 µH
50 Ω
R
G1
4.7 nF
V
GG
0 V
V
DS(A)
5 V
001aac908
Fig 30. Cross-modulation test set-up for amplifier B
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
18 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
10. Package outline
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
97-02-28
04-11-08
SOT363
SC-88
Fig 31. Package outline SOT363
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Product data sheet
Rev. 01 — 28 July 2005
19 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
11. Revision history
Table 12: Revision history
Document ID
Release date Data sheet status
20050728 Product data sheet
Change notice Doc. number
9397 750 14955
Supersedes
BF1207_1
-
-
9397 750 14955
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 28 July 2005
20 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14955
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Product data sheet
Rev. 01 — 28 July 2005
21 of 22
BF1207
Philips Semiconductors
Dual N-channel dual gate MOSFET
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
8
8.1
8.1.1
8.1.2
8.2
8.2.1
8.2.2
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics for amplifier A. . . . . . . 6
Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 7
Scattering parameters for amplifier A . . . . . . . 11
Dynamic characteristics for amplifier B. . . . . . 12
Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 13
Scattering parameters for amplifier B . . . . . . . 17
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Contact information . . . . . . . . . . . . . . . . . . . . 21
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 July 2005
Document number: 9397 750 14955
Published in The Netherlands
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