BF1206F_2015 [JMNIC]
Dual N-channel dual gate MOSFET;
| 型号： | BF1206F_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Dual N-channel dual gate MOSFET |
| 文件： | 总20页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF1206F
Dual N-channel dual gate MOSFET
Rev. 01 — 30 January 2006
Product data sheet
1. Product profile
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Two low noise gain controlled amplifiers in a single package
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio
■ Suited for 3 volt applications
1.3 Applications
■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1:
Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
ID
drain-source voltage (DC)
drain current (DC)
-
-
-
-
6
V
30
mA
|yfs|
forward transfer admittance ID = 4 mA
amplifier A
17
17
22
22
32
32
mS
mS
amplifier B
Ciss(G1) input capacitance at gate1
ID = 4 mA; f = 100 MHz
amplifier A
-
-
2.4 2.9 pF
1.7 2.2 pF
amplifier B
NF
noise figure
ID = 4 mA
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
-
-
1.0 1.6 dB
1.0 1.6 dB
Xmod
cross modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
92
93
97
98
-
-
dBµV
dBµV
2. Pinning information
Table 2:
Discrete pinning
Pin
1
Description
gate1 (AMP A)
source
Simplified outline
Symbol
6
5
4
AMP A
AMP B
2
G1A
G2
DA
3
gate1 (AMP B)
drain (AMP B)
drain (AMP A)
gate2
4
S
5
1
2
3
G1B
DB
6
sym111
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
plastic surface mounted package; 6 leads
Version
BF1206F
-
SOT666
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
2 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
4. Marking
Table 4:
Marking
Type number
BF1206F
Marking code
2N
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per MOSFET
VDS
ID
drain-source voltage (DC)
drain current (DC)
gate1 current
-
6
V
-
30
mA
mA
mA
mW
°C
IG1
IG2
Ptot
Tstg
Tj
-
±10
±10
180
+150
150
gate2 current
-
[1]
total power dissipation
storage temperature
junction temperature
T
sp ≤ 107 °C
-
−65
-
°C
[1] Tsp is the temperature at the solder point of the source lead.
001aac193
250
P
tot
(mW)
200
150
100
50
0
0
50
100
150
200
T
(˚C)
sp
Fig 1. Power derating curve
6. Thermal characteristics
Table 6:
Thermal characteristics
Parameter
Symbol
Conditions
Typ
240
Unit
Rth(j-sp)
thermal resistance from junction
to solder point
K/W
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
3 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
7. Static characteristics
Table 7:
Static characteristics
Tj = 25 °C.
Symbol
Parameter
Conditions
Min Typ Max Unit
Per MOSFET; unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S = VG2-S = 0 V; ID = 10 µA
amplifier A
6
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
amplifier B
6
-
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain cut-off current
VGS = VDS = 0 V; IG1-S = 10 mA
VGS = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 5 V; ID = 100 µA
VG2-S = 2.5 V; VDS = 2.8 V
amplifier A; RG1 = 270 kΩ
amplifier B; RG1 = 220 kΩ
VG1-S = 5 V; VG2-S = VDS = 0 V
amplifier A
6
10
10
1.5
1.5
1.0
1.0
6
0.5
0.5
0.3
0.35 -
[1]
3
3
-
-
6.5 mA
6.5 mA
IG1-S
gate1 cut-off current
gate2 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
amplifier B
IG2-S
VG2-S = 5 V; VG1-S = VDS = 0 V;
[1] RG1 connects gate 1 to VGG = 2.8 V.
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 8:
Dynamic characteristics for amplifier A
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Tj = 25 °C
Min Typ
Max Unit
|yfs|
forward transfer admittance
17
-
22
32
2.9
-
mS
pF
pF
pF
fF
[1]
[1]
[1]
[1]
[1]
Ciss(G1)
Ciss(G2)
Coss
input capacitance at gate1
input capacitance at gate2
output capacitance
f = 100 MHz
f = 100 MHz
f = 100 MHz
2.4
3.2
1.1
15
-
-
-
Crss
reverse transfer capacitance f = 100 MHz
-
30
Gtr
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS(opt)
-
-
-
-
-
-
31
-
dB
dB
dB
dB
dB
dB
28
-
23
-
NF
noise figure
3.5
1.0
1.1
-
1.6
1.7
f = 800 MHz; YS = YS(opt)
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
4 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
Table 8:
Dynamic characteristics for amplifier A …continued
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min Typ
Max Unit
[2]
Xmod
cross modulation
input level for k = 1 %; fw = 50 MHz;
f
unw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
88
-
-
-
-
-
dBµV
dBµV
dBµV
85
97
92
[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.
8.1.1 Graphs for amplifier A
001aad896
001aad897
15
16
(1)
(1)
(2)
I
D
(3)
(2)
I
D
(mA)
(mA)
12
(3)
(4)
10
8
4
0
5
0
(5)
(6)
(7)
(4)
0
0.4
0.8
1.2
1.6
2.0
(V)
0
1
2
3
4
V
V
(V)
DS
G1−S
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
(1) VG1-S(A) = 1.4 V.
(2) VG1-S(A) = 1.3 V.
(3) VG1-S(A) = 1.2 V.
(4) VG1-S(A) = 1.0 V.
(5) VG1-S(A) = 0.9 V.
(6) VG1-S(A) = 0.85 V.
(7) VG1-S(A) = 0.8 V.
VDS(A) = 2.8 V; Tj = 25 °C.
VG2-S = 2.5 V; Tj = 25 °C.
Fig 2. Amplifier A: transfer characteristics; typical
values
Fig 3. Amplifier A: output characteristics; typical
values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
5 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad898
001aad899
100
40
I
G1
Y
(mS)
fs
(µA)
(1)
(2)
80
30
(1)
(2)
60
40
20
0
20
10
0
(3)
(4)
(4)
(3)
0
0.5
1.0
1.5
2.0
V
2.5
(V)
0
4
8
12
16
I (mA)
D
G1−S
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(A) = 2.8 V; Tj = 25 °C.
VDS(A) = 2.8 V; Tj = 25 °C.
Fig 4. Amplifier A: gate1 current as a function of
gate1 voltage; typical values
Fig 5. Amplifier A: forward transfer admittance as a
function of drain current; typical values
001aad900
001aad901
16
6
I
D
I
(mA)
D
(mA)
12
4
8
4
0
2
0
0
10
20
30
0
1
2
3
I
(µA)
V
(V)
G1
GG
VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see
Figure 32.
Fig 6. Amplifier A: drain current as a function of gate1
current; typical values
Fig 7. Amplifier A: drain current as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
6 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad902
001aad903
10
6
4
2
0
I
(1)
(2)
D
(mA)
I
D
(mA)
8
(1)
(2)
(3)
(4)
6
4
2
0
(5)
(6)
(3)
(4)
(7)
(8)
(9)
(5)
0
1
2
3
V
4
0
1
2
3
4
= V (V)
V
(V)
G2−S
GG
DS
(1) RG1 = 100 kΩ.
(2) RG1 = 120 kΩ.
(3) RG1 = 150 kΩ.
(4) RG1 = 180 kΩ.
(5) RG1 = 220 kΩ.
(6) RG1 = 270 kΩ.
(7) RG1 = 330 kΩ.
(8) RG1 = 390 kΩ.
(9) RG1 = 470 kΩ.
(1) VGG = 1.0 V
(2) VGG = 1.5 V
(3) VGG = 2.0 V
(4) VGG = 2.5 V
(5) VGG = 3.0 V
Tj = 25 °C; RG1(A) = 270 kΩ (connected to VGG);
see Figure 32.
VG2-S = 2.5 V; Tj = 25 °C; see Figure 32.
Fig 8. Amplifier A: drain current as a function of VDS
and VGG; typical values
Fig 9. Amplifier A: drain current as a function of gate2
voltage; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
7 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad904
001aad905
0
110
gain
reduction
(dB)
V
unw
(dBµV)
10
100
20
30
40
50
90
80
0
1
2
3
0
20
40
60
V
(V)
gain reduction (dB)
AGC
VDS(A) = 2.8 V; VGG = 2.8 V; ID(nom) = 4 mA;
Tamb = 25 °C.
VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V;
fw = 50 MHz; funw = 60 MHz; ID(nom) = 4 mA;
Tamb = 25 °C.
Fig 10. Amplifier A: typical gain reduction as a function
of the AGC voltage; typical values
Fig 11. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
001aad906
5
I
D
(mA)
4
3
2
1
0
0
20
40
60
gain reduction (dB)
VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(A) = 270 kΩ; f = 50 MHz; Tamb = 25 °C.
Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
8 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad907
001aad908
2
2
2
10
10
−10
b , g
is is
(mS)
Y
(mS)
ϕ
fs
(deg)
fs
10
Y
fs
b
g
is
1
10
−10
ϕ
fs
is
−1
10
−2
10
1
−1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz )
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 13. Amplifier A: input admittance and phase as a
function of frequency; typical values
Fig 14. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical values
001aad909
001aad910
2
2
10
10
10
ϕ
rs
b , g
os os
(mS)
Y
ϕ
rs
rs
(µS)
(deg)
b
os
1
Y
rs
10
10
−1
10
g
os
−2
1
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz )
f (MHz)
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V;
ID(A) = 4 mA.
Fig 15. Amplifier A: reverse transfer admittance and
phase as a function of frequency: typical values
Fig 16. Amplifier A: output admittance and phase as a
function of frequency; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
9 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9:
Scattering parameters for amplifier A
VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50
0.9923
0.9930
0.9877
0.9802
0.9705
0.9596
0.9483
0.9361
0.9239
0.9129
0.9018
−4.11
2.18
2.18
2.16
2.12
2.07
2.01
1.94
1.87
1.79
1.72
1.64
174.68
169.51
159.20
149.04
138.99
129.15
119.45
109.95
100.69
91.66
0.00038
0.00080
0.00161
0.00233
0.00303
0.00354
0.00394
0.00426
0.00453
0.00457
0.00456
102.27
85.65
80.93
76.76
73.21
69.83
67.19
65.26
63.89
64.06
65.60
0.995
0.996
0.995
0.994
0.992
0.989
0.987
0.984
0.981
0.979
0.976
−1.83
100
200
300
400
500
600
700
800
900
1000
−8.29
−3.75
−16.41
−24.48
−32.34
−39.91
−47.34
−54.59
−61.64
−68.28
−74.57
−7.49
−11.22
−14.96
−18.68
−22.39
−26.11
−29.82
−33.57
−37.31
82.86
8.2 Noise data for amplifier A
Table 10: Noise data for amplifier A
VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA.
f (MHz)
NFmin (dB)
Γopt
rn (ratio)
ratio
0.78
0.87
(deg)
26
400
800
1.0
1.1
0.84
0.87
53
8.3 Dynamic characteristics for amplifier B
Table 11: Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min Typ
Max Unit
|yfs| forward transfer admittance Tj = 25 °C
-
-
-
-
-
22
-
mS
[1]
[1]
[1]
[1]
[1]
Ciss(G1) input capacitance at gate1
Ciss(G2) input capacitance at gate2
f = 100 MHz
f = 100 MHz
f = 100 MHz
1.7
4.0
0.85
30
2.2 pF
-
pF
pF
fF
Coss
Crss
Gtr
output capacitance
-
reverse transfer capacitance f = 100 MHz
45
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0
f = 400 MHz; YS = YS(opt)
-
-
-
-
-
-
32
-
-
-
-
dB
dB
dB
dB
29
25
NF
noise figure
4.5
0.9
1.0
1.5 dB
1.6 dB
f = 800 MHz; YS = YS(opt)
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
10 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
Table 11: Dynamic characteristics for amplifier B …continued
Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.
Symbol Parameter
Conditions
Min Typ
Max Unit
[2]
Xmod
cross modulation
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
89
-
-
-
-
-
dBµV
dBµV
dBµV
85
98
93
[1] Calculated from measured S-parameters.
[2] Measured in Figure 32 test circuit.
8.3.1 Graphs for amplifier B
001aad911
(3)
001aad912
15
16
(1)
(1)
(2)
I
D
(2)
I
D
(mA)
(mA)
12
10
(3)
(4)
8
4
0
5
0
(4)
(5)
(6)
(7)
0
0.4
0.8
1.2
1.6
2.0
(V)
0
1
2
3
4
V
V
(V)
DS
G1−S
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
(1) VG1-S(B) = 1.3 V.
(2) VG1-S(B) = 1.2 V.
(3) VG1-S(B) = 1.1 V.
(4) VG1-S(B) = 1.0 V.
(5) VG1-S(B) = 0.9 V.
(6) VG1-S(B) = 0.85 V.
(7) VG1-S(B) = 0.8 V.
VDS(B) = 2.8 V; Tj = 25 °C.
VG2-S = 2.5 V; Tj = 25 °C.
Fig 17. Amplifier B: transfer characteristics; typical
values
Fig 18. Amplifier B: output characteristics; typical
values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
11 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad913
001aad914
100
40
I
G1
Y
(mS)
fs
(µA)
(1)
(2)
80
30
(1)
(2)
60
40
20
0
20
10
0
(3)
(4)
(4)
(3)
0
0.5
1.0
1.5
2.0
V
2.5
(V)
0
4
8
12
16
I (mA)
D
G1−S
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
(1) VG2-S = 2.5 V.
(2) VG2-S = 2.0 V.
(3) VG2-S = 1.5 V.
(4) VG2-S = 1.0 V.
VDS(B) = 2.8 V; Tj = 25 °C.
VDS(B) = 2.8 V; Tj = 25 °C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
001aad915
001aad916
16
6
I
D
I
(mA)
D
(mA)
12
4
8
4
0
2
0
0
10
20
30
0
1
2
3
I
(µA)
V
(V)
G1
GG
VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C.
VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 kΩ;
see Figure 32.
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (=VGG); typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
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Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad917
001aad918
10
6
4
2
0
I
D
(mA)
(1)
(2)
I
D
(mA)
8
6
4
2
0
(1)
(3)
(4)
(2)
(3)
(5)
(6)
(7)
(8)
(4)
(5)
0
1
2
3
V
4
0
1
2
3
4
= V (V)
V
(V)
G2−S
GG
DS
(1) RG1 = 120 kΩ.
(2) RG1 = 150 kΩ.
(3) RG1 = 180 kΩ.
(4) RG1 = 220 kΩ.
(5) RG1 = 270 kΩ.
(6) RG1 = 330 kΩ.
(7) RG1 = 390 kΩ.
(8) RG1 = 470 kΩ.
(1) VGG = 3.0 V.
(2) VGG = 2.5 V.
(3) VGG = 2.0 V.
(4) VGG = 1.5 V.
(1) VGG = 1.0 V.
RG1(B) = 220 kΩ; Tj = 25 °C; see Figure 32.
VG2-S = 2.5 V; RG1(B) connected to VGG
;
see Figure 32.
Fig 23. Amplifier B: drain current as a function of VDS
and VGG; typical values
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
13 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad919
001aad920
0
110
gain
reduction
(dB)
V
unw
(dBµV)
10
100
20
30
40
50
90
80
0
1
2
3
0
20
40
60
V
(V)
gain reduction (dB)
AGC
VDS(A) = 2.8 V; VG2(nom) = 2.5 V; ID(nom) = 4 mA;
VDS(B) = 2.8 V; VG2 = 2.5 V; ID(nom) = 4 mA;
Tamb = 25 °C.
fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
Fig 25. Amplifier B: typical gain reduction as a function
of the AGC voltage; typical values
Fig 26. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
001aad921
5
I
D
(mA)
4
3
2
1
0
0
20
40
60
gain reduction (dB)
VDS(B) = VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(B) = 220 kW; f = 50 MHz; Tamb = 25 °C.
Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
14 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
001aad922
001aad923
2
2
2
10
10
−10
b , g
is is
(mS)
Y
(mS)
ϕ
fs
(deg)
fs
10
Y
fs
b
g
is
1
10
−10
ϕ
fs
−1
is
10
−2
10
1
−1
2
3
2
3
10
10
10
10
10
10
f (Mhz)
f (MHz )
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 28. Amplifier B: input admittance and phase as a
function of frequency; typical values
Fig 29. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
001aad924
3
001aad925
1
10
10
Y
ϕ
b , g
os os
rs
rs
(µS)
(deg)
(mS)
ϕ
b
g
−1
−2
−3
rs
rs
2
os
10
10
10
10
1
Y
−1
10
10
os
−2
1
10
X
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V;
ID(B) = 4 mA.
Fig 30. Amplifier B: reverse transfer admittance and
phase as a function of frequency: typical values
Fig 31. Amplifier B: output admittance and phase as a
function of frequency; typical values
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
15 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
8.3.2 Scattering parameters for amplifier B
Table 12: Scattering parameters for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values.
f (MHz)
s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
50
0.9939
0.9936
0.9896
0.9845
0.9779
0.9703
0.9620
0.9529
0.9439
0.9353
0.9266
−3.12
2.27
2.26
2.25
2.23
2.20
2.16
2.13
2.08
2.04
1.99
1.94
176.11
172.41
164.98
157.64
150.35
143.16
136.02
129.01
122.01
115.30
108.64
0.00089
0.00170
0.00336
0.00503
0.00642
0.00769
0.00873
0.00967
0.01024
0.01058
0.01074
94.68
84.37
81.29
77.17
73.23
69.72
66.28
63.19
60.51
58.52
57.24
0.993
0.993
0.992
0.990
0.988
0.986
0.983
0.980
0.977
0.975
0.973
−1.62
100
200
300
400
500
600
700
800
900
1000
−6.29
−3.23
−12.47
−18.59
−24.66
−30.55
−36.37
−42.10
−47.79
−53.24
−58.46
−6.44
−9.65
−12.85
−16.00
−19.18
−22.37
−25.50
−28.66
−31.85
8.3.3 Noise data for amplifier B
Table 13: Noise data for amplifier B
VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA.
f (MHz)
NFmin (dB)
Γopt
ratio
0.8
rn (ratio)
(deg)
19
400
800
0.9
1.0
0.9
0.83
46
0.96
9. Test information
V
AGC
R1
10 kΩ
C1
C3
4.7 nF
4.7 nF
L1
≈ 2.2 µH
R
L
50 Ω
C2
DUT
C4
4.7 nF
R
R2
50 Ω
GEN
50 Ω
R
G1
4.7 nF
V
V
DS
GG
V
I
001aad926
Fig 32. Cross-modulation test setup (for one MOSFET)
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
16 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
10. Package outline
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-08-27
04-11-08
SOT666
Fig 33. Package outline SOT666
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
17 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
11. Revision history
Table 14: Revision history
Document ID
Release date Data sheet status
20060130 product data sheet
Change notice Doc. number
BF1206F_1
Supersedes
BF1206F_1
-
-
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
18 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BF1206F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 30 January 2006
19 of 20
BF1206F
Philips Semiconductors
Dual N-channel dual gate MOSFET
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
1.4
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
8
8.1
8.1.1
8.1.2
8.2
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics for amplifier A. . . . . . . 4
Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 5
Scattering parameters for amplifier A . . . . . . . 10
Noise data for amplifier A . . . . . . . . . . . . . . . . 10
Dynamic characteristics for amplifier B. . . . . . 10
Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 11
Scattering parameters for amplifier B . . . . . . . 16
Noise data for amplifier B . . . . . . . . . . . . . . . . 16
8.3
8.3.1
8.3.2
8.3.3
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information . . . . . . . . . . . . . . . . . . . . 19
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 30 January 2006
BF1206F_1
Published in The Netherlands
相关型号：
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