2SD1589_15 [JMNIC]
Silicon Power Transistors;
| 型号： | 2SD1589_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon Power Transistors |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1589
DESCRIPTION
·
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1098
·Low speed switching
APPLICATIONS
·Low frequency power amplifier
·Low speed switching industrial use
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
150
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Open base
100
Open collector
7
5
V
A
ICM
IB
8
A
0.5
A
PC
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Ta=25℃
TC=25℃
1.5
W
W
℃
℃
PC
20
150
-55~150
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1589
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IC=0.1A , IB=0
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
60
V
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
DC current gain
IC=3A IB=3mA
IC=3A IB=3mA
VCB=100V IE=0
IC=3A ; VCE=2V
IC=5A ; VCE=2V
1.5
2.0
V
V
1
μA
hFE-1
hFE-2
2000
500
15000
DC current gain
Switching times
Turn-on time
1.0
3.5
1.2
μs
μs
μs
ton
ts
IC=3A ;IB1=3mA
IB2=-3mA; VCC≈50V
RL=16.7Ω
Storage time
Fall time
tf
ꢀ hFE Classifications
R
O
Y
2000-5000
3000-7000
5000-15000
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1589
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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