2SD1591_15 [JMNIC]
Silicon NPN Power Transistors;型号: | 2SD1591_15 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:113K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1591
DESCRIPTION
·
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1100
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
150
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Open base
100
7
Open collector
V
A
A
A
10
ICM
IB
15
0.5
Ta=25℃
TC=25℃
2
PC
Collector power dissipation
W
30
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1591
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
CONDITIONS
IC=0.1A ; IB=0
MIN
TYP.
MAX
UNIT
V
100
IC=10A; IB=25mA
IC=10A; IB=25mA
VCB=100V; IE=0
VCE=100V; IE=0
VEB=7V ;IC=0
1.5
2.0
V
V
10
μA
μA
mA
ICEO
Collector cut-off current
500
5
IEBO
Emitter cut-off current
hFE
DC current gain
IC=10A ; VCE=2V
1000
30000
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1591
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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