2SD1592-M [NEC]
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3;
| 型号： | 2SD1592-M |
| 厂家： | 
NEC |
| 描述： | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
• High DC current gain due to Darlington connection
• Low collector saturation
• Reverse deterrence type
• Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
Ratings
Unit
V
500
+300, −10
VCEO
V
VEBO
10
V
IC(DC)
5.0
A
Collector current
IC(pulse)*
IB(DC)
10
0.5
A
Base current
A
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PT (Tc = 25°C)
PT (Ta = 25°C)
Tj
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
30
W
W
°C
°C
1.5
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150
−55 to +150
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD1592
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 400 V, IE = 0
MIN.
TYP.
MAX.
10
Unit
µA
hFE1*
hFE2*
VCE(sat)*
VBE(sat)*
ton
VCE = 2.0 V, IC = 2.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 2 A, IB = 5 mA
400
100
3,000
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
1.0
1.6
1.0
12
6
1.5
2.0
V
V
IC = 2 A, IB = 5 mA
IC = 3.0 A, IB1 = −IB2 = 30 mA
RL = 50 Ω, VCC ≅ 150 V
µs
µs
µs
Storage time
tstg
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE
M
L
K
400 to 800
600 to 1,200
1,000 to 3,000
TYPICAL CHARACTERISTICS (Ta = 25°C)
Collector to Emitter Voltage VCE (V)
Case Temperature TC ( C)
°
Case Temperature TC ( C)
Collector Current IC (A)
°
2
Data Sheet D16137EJ1V0DS
2SD1592
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Data Sheet D16137EJ1V0DS
2SD1592
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4
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