2SD1590M [ISC]
Transistor;
| 型号： | 2SD1590M |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1590
DESCRIPTION
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 3A
·Complement to Type 2SB1099
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
150
100
7
V
V
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
8
A
ICP
12
A
IB
0.8
2
A
Collector Power Dissipation
@ Ta=25℃
PC
W
Collector Power Dissipation
@ TC=25℃
25
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1590
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP.
MAX
1.5
UNIT
V
IC= 3A; IB= 3mA
VCE(
)
sat
IC= 3A; IB= 3mA
VCB= 100V; IE= 0
VEB= 5V; IC= 0
2.0
V
VBE(
)
sat
ICBO
1.0
μA
mA
IEBO
hFE -1
hFE -2
3.0
DC Current Gain
IC= 3A; VCE= 2V
IC= 5A; VCE= 2V
2000
500
15000
DC Current Gain
Switching times
Turn-on Time
1.0
3.5
1.2
μs
μs
μs
ton
tstg
tf
IC= 3A, IB1= -IB2= 3mA;
RL= 16.7Ω; VCC≈ 50V
Storage Time
Fall Time
hFE-1 Classifications
M
L
K
2000-5000
3000-7000
5000-15000
2
isc Website：www.iscsemi.cn
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