2SD1591 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1591 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1591
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1100
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
150
100
7
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Open base
V
Open collector
V
10
A
ICM
15
A
IB
0.5
A
Ta=25ꢀ
TC=25ꢀ
2
PC
Collector power dissipation
W
30
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tj
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1591
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Collector-emitter saturation voltage IC=10A; IB=25mA
100
1.5
2.0
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=10A; IB=25mA
VCB=100V; IE=0
VCE=100V; IE=0
VEB=7V ;IC=0
V
10
µA
µA
mA
ICEO
500
5
IEBO
hFE
IC=10A ; VCE=2V
1000
30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1591
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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