2SC4940 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4940 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4940
DESCRIPTION
·With ITO-220 package
·Switching power transistor
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
1200
550
V
Open collector
7
V
4
A
ICM
Collector current-Peak
Base current
8
A
IB
2
4
A
IBM
Base current-peak
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
Tstg
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
4.16
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4940
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A ;IB=0
Collector-emitter saturation voltage IC=2A; IB=0.4A
550
V
V
V
1.0
1.5
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2A; IB=0.4A
At rated volatge
0.1
0.1
mA
mA
ICEO
IEBO
At rated volatge
IC=2A ; VCE=5V
IC=1mA ; VCE=5V
IC=0.4A ; VCE=10V
hFE-1
10
10
hFE-2
DC current gain
fT
Transition frequency
10
MHz
Switching times
ton
Turn-on time
0.8
3.0
0.3
μs
μs
μs
IC=2A;IB1=0.4A
IB2=0.8A ,RL=75Ω
VBB2=4V
ts
Storage time
Fall time
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4940
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
相关型号：
2SC4942
New package with dimensions in between those of small signal and power signal package
TYSEMI
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