2SC4941 [SHINDENGEN]
Switching Power Transistor(6A NPN); 开关功率晶体管( NPN 6A )![2SC4941](http://pdffile.icpdf.com/pdf1/p00079/img/icpdf/2SC4941_414584_icpdf.jpg)
型号: | 2SC4941 |
厂家: | ![]() |
描述: | Switching Power Transistor(6A NPN) |
文件: | 总9页 (文件大小:412K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SHINDENGEN
Switching Power Transistor
OUTLINE DIMENSIONS
Case : ITO-3P
2SC4941
Unit : mm
6A NPN
RATINGS
●Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
Tj
VCBO
VCEO
VEBO
IC
-55~150
℃
℃
V
V
V
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
150
1500
800
7
6
A
Collector Current Peak
Base Current DC
ICP
IB
12
3
A
Base Current Peak
IBP
6
Total Transistor Dissipation
Dielectric Strength
PT
Vdis
TOR
65
2
0.8(0.5)
W
kV
Terminals to case, AC 1 minute
Mounting Torque
(Recommended torque)
N・m
●Electrical Characteristics (Tc=25℃)
Item
Symbol
Conditions
IC = 0.2A
Ratings
Min 800
Min 1500
Max 0.1
Max 0.1
Max 0.1
Min 15
Unit
V
Collector to Emitter Sustaining Voltage
Collector to Base Voltage
VCEO(sus)
VCBO
ICBO
ICEO
ICB = 1mA
Collector Cutoff Current
VCB = 1200V
mA
mA
rated VCEO
Emitter Cutoff Current
DC Current Gain
IEBO
rated VEBO
hFE
VCE = 5V, IC = 1A
VCE = 5V, IC = 1mA
IC = 3A
hFEL
VCE(sat)
VBE(sat)
θjc
fT
Min 7
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Max 0.5
Max 1.5
Max 1.92 ℃/W
TYP 8
Max 0.5
Max 3.5
Max 0.3
V
V
IB = 0.6A
Junction to case
VCE = 10V, IC = 0.6A
IC = 3A
Transition Frequency
Turn on Time
MHz
ton
ts
tf
Storage Time
IB1 = 0.6A, IB2 = 1.2A
RL = 85Ω, VBB2 = 4V
μs
Fall Time
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
F E
D C C u r r e n t G a i n h
B E
[ V ]
B a s e - E m i t t e r V o l t a g e V
C E
[ V ]
C o l l e c t o r - E m i t t e r V o l t a g e V
2SC4941
Switching Time - IC
10
t
s
1
t
on
0.1
t
f
I
I
= 0.2I
= 0.4I
B1
C
C
B2
V
V
= 4V
= 250V
BB2
CC
Tc = 25°C
0.01
0
1
2
3
4
5
6
Collector Current IC [A]
2SC4941
Switching Time - Tc
10
t
s
1
t
on
t
f
0.1
I = 3A
C
I
B1
I
B2
= 0.6A
= 1.2A
V
BB2
= 4V
R = 85W
L
0.01
0
50
100
150
Case Temperature Tc [°C]
2SC4941
Forward Bias SOA
12
10
10ms
1ms
150ms
50ms
DC
P limit
T
1
I
limit
S/B
0.1
Tc = 25°C
Single Pulse
0.01
1
10
100
800
Collector-Emitter Voltage VCE [V]
2SC4941
Collector Current Derating
100
80
60
40
20
0
I
limit
S/B
P limit
T
V
CE
= fixed
0
50
100
150
Case Temperature Tc [°C]
2SC4941
Reverse Bias SOA
12
10
8
I
I
V
= 0.25I
C
B1
= 0.9A
= 5V
B2
BB2
Tc < 150°C
6
4
2
0
0
200
400
600
800
1000
1200
Collector-Emitter Voltage VCE [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
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